/TechnicalInformation IGBT- IGBT-modules FZ1600R17KE3_B2 PreliminaryData IGBT,/IGBT,Inverter /MaximumRatedValues Collector-emittervoltage Tvj = 25C VCES 1700 V ContinuousDCcollectorcurrent TC = 80C, Tvj max = 150C TC = 25C, Tvj max = 150C IC nom IC 1600 2400 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 3200 A Totalpowerdissipation TC = 25C, Tvj max = 150C Ptot 10,5 kW Gate-emitterpeakvoltage VGES +/-20 V /CharacteristicValues min. Collector-emittersaturationvoltage IC = 1600 A, VGE = 15 V IC = 1600 A, VGE = 15 V Gatethresholdvoltage IC = 64,0 mA, VCE = VGE, Tvj = 25C Gatecharge Tvj = 25C Tvj = 125C VCE sat A A typ. max. 2,00 2,40 2,45 V V VGEth 5,2 5,8 6,4 V VGE = -15 V ... +15 V QG 19,0 C Internalgateresistor Tvj = 25C RGint 1,0 Inputcapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 145 nF Reversetransfercapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 4,70 nF - Collector-emittercut-offcurrent VCE = 1700 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA - Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA () Turn-ondelaytime,inductiveload IC = 1600 A, VCE = 900 V VGE = 15 V RGon = 0,9 Tvj = 25C Tvj = 125C td on 0,65 0,70 s s () Risetime,inductiveload IC = 1600 A, VCE = 900 V VGE = 15 V RGon = 0,9 Tvj = 25C Tvj = 125C tr 0,16 0,20 s s () Turn-offdelaytime,inductiveload IC = 1600 A, VCE = 900 V VGE = 15 V RGoff = 1,1 Tvj = 25C Tvj = 125C td off 1,30 1,60 s s () Falltime,inductiveload IC = 1600 A, VCE = 900 V VGE = 15 V RGoff = 1,1 Tvj = 25C Tvj = 125C tf 0,18 0,30 s s () Turn-onenergylossperpulse IC = 1600 A, VCE = 900 V, LS = 50 nH VGE = 15 V RGon = 0,9 Tvj = 25C Tvj = 125C Eon 305 445 mJ mJ ( Turn-offenergylossperpulse IC = 1600 A, VCE = 900 V, LS = 50 nH VGE = 15 V RGoff = 1,1 Tvj = 25C Tvj = 125C Eoff 410 600 mJ mJ SCdata VGE 15 V, VCC = 1000 V VCEmax = VCES -LsCE *di/dt ISC Thermalresistance,junctiontocase IGBT/perIGBT RthJC Thermalresistance,casetoheatsink IGBT/perIGBT Paste=1W/(m*K)/grease=1W/(m*K) RthCH 12,0 Temperatureunderswitchingconditions Tvj op -40 preparedby:WB dateofpublication:2013-11-25 approvedby:PL revision:2.3 1 tP 10 s, Tvj = 125C 6400 A 12,0 K/kW K/kW 125 C /TechnicalInformation IGBT- IGBT-modules FZ1600R17KE3_B2 PreliminaryData ,/Diode,Inverter /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C ContinuousDCforwardcurrent Repetitivepeakforwardcurrent tP = 1 ms I2t- It-value VR = 0 V, tP = 10 ms, Tvj = 125C Maximumpowerdissipation Tvj = 125C VRRM 1700 V IF 1600 A IFRM 3200 A It 775 kAs PRQM 2400 kW /CharacteristicValues min. typ. max. 1,55 1,60 2,00 Forwardvoltage IF = 1600 A, VGE = 0 V IF = 1600 A, VGE = 0 V Tvj = 25C Tvj = 125C VF Peakreverserecoverycurrent IF = 1600 A, - diF/dt = 8900 A/s (Tvj=125C) Tvj = 25C VR = 900 V Tvj = 125C VGE = -15 V IRM 1800 2000 A A Recoveredcharge IF = 1600 A, - diF/dt = 8900 A/s (Tvj=125C) Tvj = 25C VR = 900 V Tvj = 125C VGE = -15 V Qr 470 790 C C Reverserecoveryenergy IF = 1600 A, - diF/dt = 8900 A/s (Tvj=125C) Tvj = 25C VR = 900 V Tvj = 125C VGE = -15 V Erec 315 565 mJ mJ Thermalresistance,junctiontocase /perdiode RthJC Thermalresistance,casetoheatsink /perdiode Paste=1W/(m*K)/grease=1W/(m*K) RthCH 22,0 Temperatureunderswitchingconditions Tvj op -40 preparedby:WB dateofpublication:2013-11-25 approvedby:PL revision:2.3 2 V V 21,0 K/kW K/kW 125 C /TechnicalInformation IGBT- IGBT-modules FZ1600R17KE3_B2 PreliminaryData /Module Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. Materialofmodulebaseplate AlSiC Internalisolation (class1,IEC61140) basicinsulation(class1,IEC61140) AlN Creepagedistance -/terminaltoheatsink -/terminaltoterminal 32,2 32,2 mm Clearance -/terminaltoheatsink -/terminaltoterminal 19,1 19,1 mm Comperativetrackingindex CTI > 400 Thermalresistance,casetoheatsink /permodule Paste=1W/(m*K)/grease=1W/(m*K) , Strayinductancemodule ,- Moduleleadresistance,terminals-chip TC=25C,/perswitch Storagetemperature Mountingtorqueformodulmounting Terminalconnectiontorque VISOL kV 4,0 min. typ. RthCH 8,00 LsCE 12 nH RCC'+EE' 0,19 m Tstg -40 125 C M6 ScrewM6-Mountingaccordingtovalidapplicationnote M 4,25 - 5,75 Nm M4 ScrewM4-Mountingaccordingtovalidapplicationnote M8 ScrewM8-Mountingaccordingtovalidapplicationnote 1,8 - 2,1 Nm M 8,0 - 10 Nm Weight G 1050 g preparedby:WB dateofpublication:2013-11-25 approvedby:PL revision:2.3 3 max. K/kW /TechnicalInformation IGBT- IGBT-modules FZ1600R17KE3_B2 PreliminaryData IGBT,) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V IGBT,) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=125C 3200 3200 Tvj = 25C Tvj = 125C 2800 2800 2000 2000 IC [A] 2400 IC [A] 2400 1600 1600 1200 1200 800 800 400 400 0 VGE = 20V VGE = 15V VGE = 12V VGE = 10V VGE = 9V VGE = 8V 0,0 0,5 1,0 1,5 2,0 VCE [V] 2,5 3,0 3,5 0 4,0 IGBT,() transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 IGBT,) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=15V,RGon=0.9,RGoff=1.1,VCE=900V 3200 1400 Tvj = 25C Tvj = 125C 2800 Eon, Tvj = 125C Eoff, Tvj = 125C 1300 1200 1100 2400 1000 900 2000 IC [A] E [mJ] 800 1600 700 600 1200 500 400 800 300 200 400 100 0 5 6 7 8 9 VGE [V] 10 11 12 0 13 preparedby:WB dateofpublication:2013-11-25 approvedby:PL revision:2.3 4 0 400 800 1200 1600 2000 2400 2800 3200 IC [A] /TechnicalInformation IGBT- IGBT-modules FZ1600R17KE3_B2 PreliminaryData IGBT,) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=15V,IC=1600A,VCE=900V IGBT, transientthermalimpedanceIGBT,Inverter ZthJC=f(t) 2800 100 Eon, Tvj = 125C Eoff, Tvj = 125C 2600 ZthJC : IGBT 2400 2200 2000 10 1800 E [mJ] ZthJC [K/kW] 1600 1400 1200 1000 1 800 600 400 i: 1 2 3 4 ri[K/kW]: 2,4 2,4 4,8 2,4 i[s]: 0,01 0,04 0,09 0,2 200 0 0 1 2 3 4 5 RG [] 6 7 8 0,1 0,001 9 IGBT,RBSOA reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=15V,RGoff=1.1,Tvj=125C 0,01 0,1 t [s] 1 10 ,) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 3600 3200 IC, Modul IC, Chip 3200 Tvj = 25C Tvj = 125C 2800 2800 2400 2400 2000 IF [A] IC [A] 2000 1600 1600 1200 1200 800 800 400 400 0 0 200 400 600 0 800 1000 1200 1400 1600 1800 VCE [V] preparedby:WB dateofpublication:2013-11-25 approvedby:PL revision:2.3 5 0,0 0,5 1,0 1,5 VF [V] 2,0 2,5 3,0 /TechnicalInformation IGBT- IGBT-modules FZ1600R17KE3_B2 PreliminaryData ,) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=0.9,VCE=900V ,) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=1600A,VCE=900V 700 700 Erec, Tvj = 125C 650 Erec, Tvj = 125C 650 600 550 600 500 550 450 500 E [mJ] E [mJ] 400 350 300 450 400 250 200 350 150 300 100 250 50 0 0 400 800 200 1200 1600 2000 2400 2800 3200 IF [A] , transientthermalimpedanceDiode,Inverter ZthJC=f(t) 0 1 2 3 4 5 RG [] 6 7 8 9 ,(SOA) safeoperationareaDiode,Inverter(SOA) IR=f(VR) Tvj=125C 100 4000 ZthJC : Diode IR, Modul 3600 3200 2800 10 IR [A] ZthJC [K/kW] 2400 2000 1600 1 1200 800 i: 1 2 3 4 ri[K/kW]: 4,2 4,2 8,4 4,2 i[s]: 0,01 0,04 0,09 0,2 0,1 0,001 0,01 0,1 t [s] 1 400 0 10 preparedby:WB dateofpublication:2013-11-25 approvedby:PL revision:2.3 6 0 200 400 600 800 1000 1200 1400 1600 1800 VR [V] /TechnicalInformation IGBT- IGBT-modules FZ1600R17KE3_B2 PreliminaryData /circuit_diagram_headline /packageoutlines preparedby:WB dateofpublication:2013-11-25 approvedby:PL revision:2.3 7 /TechnicalInformation IGBT- IGBT-modules FZ1600R17KE3_B2 PreliminaryData www.infineon.com - - - Terms&Conditionsofusage Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch application. 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