ELECTRICAL CHARACTERISTICS (at T.~1
PARAMETER ISYMBOL IMIN.
Collector-Base Breakdown v(aR)ceo -140
Voltage
Collector-Emitter Breakdown ‘IBR)GR -140
Voltage
Collector-Emitter Breakdown ‘( BFOCEO -1oo
Voltaga
Emitter-Base Breakdown ‘( SR)EBO -6
Voltage
Collactor Cut-Off Current Iceo I
Collector Cut-Off Current lCER
R<lkQ I
Y
Collector-Emitter Saturation ——
Base-Emitter vaE(~a)
Saturation Voltage 1
Base-Emitter va~,on)
Turn-On Voltage
Static Forward
Current Transfer
Transition Frequency f,
——
—.
100
100
50
30
——
:25°C unles
TYP.
-170
-170
-120
-8
-20
-90
-160
-300
-1010
-925
200
200
90
50
15
125
65
110
460
MAX.
-50
-1
-50
-1
-lo
-50
-115
-220
-420
-1170
-1160
300
Measured under pulsed conditions. Pulse width= 300ps. Duty cycles
pice parameter data is available upon request for this device
iotherwise stated)
v
vle-lpA, RB <lkQ
v1~-10mA*
vlE=-loo@
nA v~~-loov
PA Vc~-lOOV, T,mw 100”C
v~~-loov
zVCS=-lOOV,T.mtilOOOC
nA VES=+V
mV 1~-100mA, lF-lOmA*
mV l~-lAr la=-lOOmA*
mV 1~-2A, la=-200mA*
mV l&-4A, lr-400mA*
mV 1~-4A, 1~-400mA*
mV IC=-4A,VW-IV*
i~-lOmA, V&-lV*
l~-lA, VW-lV*
i~-3A, V&-l V*
1~-4A, VW-l V’
1~-10A, VCF-lV”
MHz 1~-100mA, VCP-lOV
f=50MHz
pF VCF-lOV, f=lMHz
ns 1~-2A, laF-200mA
ns lap200mA, vc~-lov
%
3-282
TYPICAL CHAF
,—— —— —-
0I’(’I 0[)1 0,1 11’) 20
IC ICollectnr Current (Amps)
VCE(sat) ViC
E(EI
,CTERISTICS ____—
Ic ILollector Current (Amps)
hFE VIC
02!_Ud+
IC Collector Current (Amps)
l/BE(on) VIC
“OWJ1 001 01 1 10x
k. Collector Current (Amps)
VCE(sat) vIC
—
‘~BE(sst) VIC
Safe Opereting Area
3-283
