SiHP16N50C, SiHB16N50C, SiHF16N50C
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S11-1116-Rev. B, 13-Jun-11 1Document Number: 91401
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Power MOSFET
FEATURES
• Low Figure-of-Merit Ron x Qg
• 100 % Avalanche Tested
• Gate Charge Improved
•T
rr/Qrr Improved
• Compliant to RoHS Directive 2002/95/EC
Note
*Pb containing terminations are not RoHS compliant, exemptions
may apply
Notes
a. Limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 , IAS = 16 A.
c. Repetitive rating; pulse width limited by maximum junction temperature.
d. 1.6 mm from case.
PRODUCT SUMMARY
VDS (V) at TJ max. 560
RDS(on) ()V
GS = 10 V 0.38
Qg (Max.) (nC) 68
Qgs (nC) 17.6
Qgd (nC) 21.8
Configuration Single
N-Channel MOSFET
G
D
S
TO-220AB
GD
S
S
D
G
TO-220 FULLPAK
D2PAK (TO-263)
GD
S
ORDERING INFORMATION
Package TO-220AB D2PAK (TO-263) TO-220 FULLPAK
Lead (Pb)-free
SiHP16N50C-E3 SiHB16N50C-E3 SiHF16N50C-E3
- SiHB16N50CTR-E3 -
- SiHB16N50CTL-E3 -
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 500 V
Gate-Source Voltage VGS ± 30
Continuous Drain Current (TJ = 150 °C)a V
GS at 10 V TC = 25 °C ID
16
ATC = 100 °C 10
Pulsed Drain Currentc I
DM 40
Linear Derating Factor 2W/°C
Single Pulse Avalanche EnergybEAS 320 mJ
Maximum Power Dissipation TO220-AB, D2PAK (TO-263) PD
250 W
TO-220 FULLPAK 38
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150
°C
Soldering Recommendations (Peak Temperature)dfor 10 s 300
SiHP16N50C, SiHB16N50C, SiHF16N50C
www.vishay.com Vishay Siliconix
S11-1116-Rev. B, 13-Jun-11 2Document Number: 91401
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Note
• The information shown here is a preliminary product proposal, not a commercial product data sheet. Vishay Siliconix is not committed to
produce this or any similar product. This information should not be used for design purposes, nor construed as an offer to furnish or sell
such products.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TO220-AB D2PAK (TO-263) TO-220 FULLPAK UNIT
Maximum Junction-to-Ambient RthJA 62 65
°C/WMaximum Junction-to-Case (Drain) RthJC 0.5 3.3
Junction-to-Ambient (PCB mount)aRthJA 40 -
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 500 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.6 - V/°C
Gate-Source Threshold Voltage (N) VGS(th) VDS = VGS, ID = 250 μA 3.0 - 5.0 V
Gate-Source Leakage IGSS V
GS = ± 30 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 500 V, VGS = 0 V - - 50 μA
VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250
Drain-Source On-State Resistance RDS(on) V
GS = 10 V ID = 8 A - 0.31 0.38
Forward Transconductancea g
fs VDS = 50 V, ID = 3 A - 3 - S
Dynamic
Input Capacitance Ciss VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz
- 1900 -
pFOutput Capacitance Coss - 230 -
Reverse Transfer Capacitance Crss -24-
Total Gate Charge Qg
VGS = 10 V ID = 16 A, VDS = 400 V
-4568
nC
Gate-Source Charge Qgs -18-
Gate-Drain Charge Qgd -22-
Turn-On Delay Time td(on)
VDD = 250 V, ID = 16 A,
Rg = 9.1 VGS = 10 V
-27-
ns
Rise Time tr - 156 -
Turn-Off Delay Time td(off) -29-
Fall Time tf -31-
Gate Input Resistance Rgf = 1 MHz, open drain - 1.6 -
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISMOSFET symbol
showing the
integral reverse
p - n junction diode
--16
A
Pulsed Diode Forward Current ISM --30
Body Diode Voltage VSD TJ = 25 °C, IS = 10 A, VGS = 0 V - - 1.8 V
Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = IS, dI/dt = 100 A/μs,
VR = 20 V
- 555 - ns
Body Diode Reverse Recovery Charge Qrr -5.5-μC
Body Diode Reverse Recovery Current IRRM -18- A
S
D
G
SiHP16N50C, SiHB16N50C, SiHF16N50C
www.vishay.com Vishay Siliconix
S11-1116-Rev. B, 13-Jun-11 3Document Number: 91401
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics (TO-220)
Fig. 2 - Typical Output Characteristics (TO-220)
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
VDS, Drain-to-Source Voltage (V)
I
D
, Drain-to-Source Current (A)
0 5 10 15 20 25 30
0
5
10
15
20
25
30
T
J
= 25 °C
V
GS
TOP 15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
BOTTOM 5.0 V
7.0 V
35
40
45
50
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain-to-Source Current (A)
0 5 10 15 20 25 30
0
5
10
15
20
25
30
T
J
= 150 °C
VGS
TOP 15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
BOTTOM 5.0 V
7.0 V
VGS, Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
0246810
0
5
10
15
20
25
30
TJ = 150 °C
TJ = 25 °C
35
40
45
12 20
181614
TJ, Junction Temperature (°C)
RDS(on), Drain-to-Source On-Resistance
(Normalized)
0
0.5
1
1.5
2
2.5
3
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
ID = 16 A
VGS = 10 V
SiHP16N50C, SiHB16N50C, SiHF16N50C
www.vishay.com Vishay Siliconix
S11-1116-Rev. B, 13-Jun-11 4Document Number: 91401
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area (TO-220AB, D2PAK)
Fig. 9 - Maximum Safe Operating Area (TO-220 FULLPAK)
VDS, Drain-to-Source Voltage (V)
C, Capacitance (pF)
1 10 100 1000
2400
2000
1600
1200
800
400
0
VGS = 0 V, f = 1MHz
Ciss = Cgs +Cgd Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Ciss
Crss
2800
QG, Total Gate Charge (nC)
VGS, Gate-to-Source Voltage (V)
0 20406080
0
4
8
12
16
20
24
ID = 16 A VDS = 400 V
VDS = 250 V
VDS = 100 V
0.1
1
10
100
V
SD
, Source-to-Drain Voltage (V)
I
SD
, Reverse Drain Current (A)
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
V
GS
= 0 V
T
J
= 25 °C
T
J
= 150 °C
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain-to-Source Current (A)
10 100 1000
1 ms
10 ms
TC = 25 °C
TJ = 150 °C
Single Pulse
TC = 25 °C
TJ = 150 °C
Single Pulse
TC = 25 °C
TJ = 150 °C
Single Pulse
TC = 25 °C
TJ = 150 °C
Single Pulse
100 µs
OPERATION IN THIS AREA
LIMITED BY RDS(on)
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
10 100 1000
100 µs
TC = 25 °C
TJ = 150 °C
Single Pulse
10 ms
1 ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
SiHP16N50C, SiHB16N50C, SiHF16N50C
www.vishay.com Vishay Siliconix
S11-1116-Rev. B, 13-Jun-11 5Document Number: 91401
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case (TO-220AB, D2PAK)
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case (TO-220 FULLPAK)
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10 V
+
-
VDS
VDD
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
1
0.1
0.01
10-4 10-3 10-2 0.1 1
t
1
, Rectangular Pulse Duration (s)
Thermal Response (Z
thJC
)
Single Pulse
(Thermal Response)
0.02
0.05
0.1
0.5
0.2
PDM
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
1
0.1
0.01
10-4 10-3 10-2 0.1 1 10
t1, Rectangular Pulse Duration (s)
Thermal Response (ZthJC)
Single Pulse
(Thermal Response)
0.02
0.05
0.5
0.2
0.1
PDM
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
SiHP16N50C, SiHB16N50C, SiHF16N50C
www.vishay.com Vishay Siliconix
S11-1116-Rev. B, 13-Jun-11 6Document Number: 91401
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 13a - Unclamped Inductive Test Circuit
Fig. 13b - Unclamped Inductive Waveforms
Fig. 14a - Basic Gate Charge Waveform
Fig. 14b - Gate Charge Test Circuit
A
R
G
I
AS
0.01
Ω
t
p
D.U.T.
L
VDS
+
-V
DD
Driver
A
15 V
20 V
t
p
V
DS
I
AS
QGS QGD
QG
V
G
Charge
VGS
D.U.T. V
DS
I
D
I
G
3 mA
V
GS
0.3 µF
50 kΩ
0.2 µF
12 V
Current regulator
Same type as D.U.T.
Current sampling resistors
+
-
SiHP16N50C, SiHB16N50C, SiHF16N50C
www.vishay.com Vishay Siliconix
S11-1116-Rev. B, 13-Jun-11 7Document Number: 91401
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 15 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91401.
P.W. Period
dI/dt
Diode recovery
dV/dt
Ripple ≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
V
GS
= 10 V
a
I
SD
Driver gate drive
D.U.T. l
SD
waveform
D.U.T. V
DS
waveform
Inductor current
D =
P.W.
Period
+
-
+
+
+
-
-
-
Peak Diode Recovery dV/dt Test Circuit
V
DD
• dV/dt controlled by R
g
• Driver same type as D.U.T.
•
I
SD
controlled by duty factor “D”
• D.U.T. - device under test
D.U.T. Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
R
g
Note
a. V
GS
= 5 V for logic level devices
V
DD
Package Information
www.vishay.com Vishay Siliconix
Revison: 14-Dec-15 1Document Number: 66542
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-220-1
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
M
*
3
2
1
L
L(1)
D
H(1)
Q
Ø P
A
F
J(1)
b(1)
e(1)
e
E
b
C
DIM. MILLIMETERS INCHES
MIN. MAX. MIN. MAX.
A 4.24 4.65 0.167 0.183
b 0.69 1.02 0.027 0.040
b(1) 1.14 1.78 0.045 0.070
c 0.36 0.61 0.014 0.024
D 14.33 15.85 0.564 0.624
E 9.96 10.52 0.392 0.414
e 2.41 2.67 0.095 0.105
e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.10 6.71 0.240 0.264
J(1) 2.41 2.92 0.095 0.115
L 13.36 14.40 0.526 0.567
L(1) 3.33 4.04 0.131 0.159
Ø P 3.53 3.94 0.139 0.155
Q2.54 3.00 0.100 0.118
ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031
Package Picture
ASE Xi’an
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
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