IGBT MODULE Spec.No.IGBT-SP-10007 R0
P1
MBM400E25E
Silicon N-channel IGBT
FEATURES
∗ High speed, low loss IGBT module.
∗ Low driving power due to low input
capacitance MOS gate.
∗ Low noise due to ultra soft fast recovery diode.
∗ High reliability, high durability module.
∗ High thermal fatigue durability.
(delta Tc=70K, N>30,000cycles)
∗ Isolated heat sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS (Tc=25
oC
)
Item Symbol Unit MBM400E25E
Collector Emitter Voltage V
CES
V 2,500
Gate Emitter Voltage V
GES
V ±20
DC I
C
400 (Tc=100
o
C)
Collector Current 1ms I
Cp
A 800
DC I
F
400
Forward Current 1ms I
FM
A 800
Junction Temperature T
j
o
C -40 ~ +150
Storage Temperature T
stg
o
C -40 ~ +125
Isolation Voltage V
ISO
V
RMS
4,000(AC 1 minute)
Terminals
(M4/M8)
- 2/15 (1)
Screw Torque Mounting
(M6)
- N·m 6 (2)
Notes: (1) Recommended Value 1.8±0.2/9±1N·m (2) Recommended Value 5.5±0.5N·m
ELECTRICAL CHARACTERISTICS
Item Symbol
Unit
Min.
Typ.
Max.
Test Conditions
- - 4 V
CE
=2,500V, V
GE
=0V, Tj=25
o
C
Collector Emitter Cut-Off Current I
CES
mA - 7 20 V
CE
=2,500V, V
GE
=0V, Tj=138
o
C
Gate Emitter Leakage Current I
GES
nA -500
- +500
V
GE
=±20V, V
CE
=0V, Tj=25
o
C
Collector Emitter Saturation Voltage V
CE(sat)
V 1.6 2.3 3.0 I
C
=400A, V
GE
=14.7V, Tj=138
o
C (chip level)
Gate Emitter Threshold Voltage V
GE(TO)
V 4.5 6.0 7.5 V
CE
=15V, I
C
=40mA, Tj=25
o
C
Input Capacitance C
ies
nF - 67 - V
CE
=10V, V
GE
=0V, f=100kHz, Tj=25
o
C
Internal Gate Resistance Rge Ω - 4.8 - V
CE
=10V, V
GE
=0V, f=100kHz, Tj=25
o
C
Rise Time t
r
0.9 1.5 2.1
Turn On Time
t
on
2.0 2.6 3.2
Fall Time t
f
0.8 1.4 2.0
Switching Times
Turn Off Time
t
off
µs
2.8 3.8 4.8
V
CC
=1,300V, Ic=150A
L=120nH
R
G
(ON/OFF)=15/4.7Ω (3)
V
GE
=±14.7V, Tj=138
o
C
Peak Forward Voltage Drop V
FM
V 1.8 2.2 2.8 IF=400A, V
GE
=0V, Tj=138
o
C (chip level)
Reverse Recovery Time t
rr
µs 0.3 0.6 0.9 Vcc=1,300V, I
F
=150A, L=120nH
Tj=138
o
C
Turn On Loss E
on(10%)
J/P - 0.25
0.28
Turn Off Loss E
off(10%)
J/P - 0.23
0.30
Reverse Recovery Loss E
rr(10%)
J/P - 0.15
0.19
V
CC
=1,300V, Ic= I
F
=150A, L=120nH
R
G
(ON/OFF)= 15/4.7Ω (3)
V
GE
=±14.7V, Tj=138
o
C
IGBT Rth(j-c)
- - 0.0255
Thermal Impedance FWD Rth(j-c)
K/W
- - 0.051
Junction to case (par arm)
Contact Thermal Impedance Rth(c-f)
K/W
- 0.018
- Case to fin (par arm)
Notes:(3) R
G
value is the test condition’s value for evaluation of the switching times, not recommended value.
Please, determine the suitable R
G
value after the measurement of switching waveforms
(overshoot voltage, etc.) with appliance mounted.
* Please contact our representatives at order.
* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.
OUTLINE DRAWING
Weight: 900(g)
Unit in mm
CIRCUIT DIAGRAM
C2
E
2
E2
(C1)
G2
C2
C1
E1
E1
G1
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IGBT MODULE Spec.No.IGBT-SP-10007 R0
P2
MBM400E25E
HITACHI POWER SEMICONDUCTORS
For inquiries relating to the products, please contact nearest overseas representatives that is located
“Inquiry” portion on the top page of a home page.
Hitachi power semiconductor home page address
http://www.hitachi.co.jp/products/power/pse/
Notices
1. The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are advised to contact Hitachi sales
department for the latest version of this
data sheets.
2.
Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3.
In cases where extremely high reliability is required (such as use in nuclear power
control, aerospace and aviation, traffic equipment, life-support-
related medical
equipment, fuel
control equipment and various kinds of safety equipment), safety should
be ensured by
using semiconductor devices that feature assured safety or by means of
users’ fail-safe
precautions or other arrangement. Or consult Hitachi’s sales department
staff.
4. In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheet
s. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5. In no event shall Hitachi be liable for any failure in
a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6. No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi, Ltd.
7. This data sheets may n
ot be reproduced or duplicated, in any form, in whole or in part,
without the expressed written permission of Hitachi, Ltd.
8. The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application
will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
to be taken in accordance with related laws and regulations.
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