33 GHz to 40 GHz, GaAs, pHEMT, MMIC, 1 W Power Amplifier with Power Detector HMC7229 Data Sheet FEATURES GENERAL DESCRIPTION 32 dBm PSAT with 22% PAE P1dB POUT: 31.5 dBm High OIP3: 39.5 dBm High gain: 24.5 dB 50 matched input/output The HMC7229 is a four-stage, gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), 1 W power amplifier with an integrated temperature compensated on-chip power detector, operating between 33 GHz and 40 GHz. The HMC7229 provides a typical range of 23 dB to 24.5 dB of gain and a range of 30 dBm to 32 dBm of saturated output power (PSAT) with 12% to 22% (typical) power added efficiency (PAE) range across a band of 33 GHz to 40 GHz from a 6 V supply. With an excellent OIP3 with a range of 37 dBm to 39.5 dBm across a band of 33 GHz to 40 GHz, the HMC7229 is ideal for linear applications such as high capacity point to point or point to multipoint radios or very small aperture terminal (VSAT)/satellite communications (SATCOM) applications demanding 32 dBm of efficient saturated output power. The radio frequency (RF) input/output ports are internally matched and dc blocked for easy integration into higher level assemblies. APPLICATIONS Point to point radios Point to multipoint radio VSAT and SATCOM FUNCTIONAL BLOCK DIAGRAM VGG1 VDD1 VDD2 VDD3 VDD4 2 3 4 5 6 7 VREF 8 RFOUT 9 VDET RFIN 1 14 13 VGG2 VDD5 12 VDD6 11 10 VDD7 VDD8 14566-001 HMC7229 Figure 1. Rev. D Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 (c)2016-2018 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com HMC7229 Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 Typical Performance Characteristics ..............................................8 Applications ....................................................................................... 1 Theory of Operation ...................................................................... 12 General Description ......................................................................... 1 Applications Information .............................................................. 13 Functional Block Diagram .............................................................. 1 Biasing Procedures ..................................................................... 13 Revision History ............................................................................... 2 Typical Application Circuit ....................................................... 13 Specifications..................................................................................... 3 33 GHz to 35 GHz Frequency Range ......................................... 3 Mounting and Bonding Techniques for Millimeter Wave GaAs MMICs ......................................................................................... 14 35 GHz to 37 GHz Frequency Range ......................................... 3 Handling Precautions ................................................................ 14 37 GHz to 40 GHz Frequency Range ......................................... 4 Mounting ..................................................................................... 14 Absolute Maximum Ratings............................................................ 5 Assembly Diagram ..................................................................... 15 ESD Caution .................................................................................. 5 Outline Dimensions ....................................................................... 16 Pin Configuration and Function Descriptions ............................. 6 Ordering Guide .......................................................................... 16 Interface Schematics..................................................................... 7 REVISION HISTORY 5/2018--Rev. C to Rev. D Moved Biasing Procedures Section and Typical Applications Circuit Section ................................................................................ 13 Changes to Biasing Procedures Section....................................... 13 Changes to Ordering Guide .......................................................... 16 11/2017--Rev. B to Rev. C Changes to Figure 36 ...................................................................... 14 9/2017--Rev. A to Rev. B Change to Figure 32 ....................................................................... 11 Changes to Theory of Operation Section and Figure 34........... 12 Change to Ordering Guide ............................................................ 16 7/2017--Rev. 0 to Rev. A Changed HMC7229CHIPS to HMC7229 .................. Throughout 6/2016--Revision 0: Initial Version Rev. D | Page 2 of 16 Data Sheet HMC7229 SPECIFICATIONS 33 GHz TO 35 GHz FREQUENCY RANGE TA = 25C, VDD = VDD1 = VDD2 = VDD3 = VDD4 = VDD5 = VDD6 = VDD7 = VDD8 = 6 V, IDQ = 1200 mA. 1, 2 Table 1. Parameter FREQUENCY RANGE GAIN Gain Variation over Temperature RETURN LOSS Input Output OUTPUT Output Power for 1 dB Compression Saturated Output Power Power Added Efficiency Output Third-Order Intercept SUPPLY CURRENT SUPPLY VOLTAGE 1 2 3 Symbol P1dB PSAT PAE OIP3 IDQ 3 VDD Test Conditions/Comments Min 33 21 29.5 PAE taken at saturated output power Measurement taken at POUT/tone = 20 dBm Typ 23 0.035 Unit GHz dB dB/C 7 15 dB dB 31.5 32 22 39.5 dBm dBm % dBm mA V 800 5 Max 35 1200 6 Recommended bias conditions. Adjust the VGGx supply voltage between -2 V and 0 V to achieve IDQ = 1200 mA. IDQ is the drain current without applying RF power. 35 GHz TO 37 GHz FREQUENCY RANGE TA = 25C, VDD = VDD1 = VDD2 = VDD3 = VDD4 = VDD5 = VDD6 = VDD7 = VDD8 = 6 V, IDQ = 1200 mA. 1, 2 Table 2. Parameter FREQUENCY RANGE GAIN Gain Variation over Temperature RETURN LOSS Input Output OUTPUT Output Power for 1 dB Compression Saturated Output Power Power Added Efficiency Output Third-Order Intercept SUPPLY CURRENT SUPPLY VOLTAGE Symbol P1dB PSAT PAE OIP3 IDQ 3 VDD Test Conditions/Comments Min 35 22.5 28.5 PAE taken at saturated output power Measurement taken at POUT/tone = 20 dBm 800 5 Recommended bias conditions. Adjust the VGGx supply voltage between -2 V and 0 V to achieve IDQ = 1200 mA. 3 IDQ is the drain current without applying RF power. 1 2 Rev. D | Page 3 of 16 Typ Max 37 24.5 0.044 Unit GHz dB dB/C 9.5 20 dB dB 30.5 31 16 39 dBm dBm % dBm mA V 1200 6 HMC7229 Data Sheet 37 GHz TO 40 GHz FREQUENCY RANGE TA = 25C, VDD = VDD1 = VDD2 = VDD3 = VDD4 = VDD5 = VDD6 = VDD7 = VDD8 = 6 V, IDQ = 1200 mA. 1, 2 Table 3. Parameter FREQUENCY RANGE GAIN Gain Variation over Temperature RETURN LOSS Input Output OUTPUT Output Power for 1 dB Compression Saturated Output Power Power Added Efficiency Output Third-Order Intercept SUPPLY CURRENT SUPPLY VOLTAGE 1 2 3 Symbol P1dB PSAT PAE OIP3 IDQ 3 VDD Test Conditions/Comments Min 37 21.5 27.5 PAE taken at saturated output power Measurement taken at POUT/tone = 20 dBm 800 5 Recommended bias conditions. Adjust the VGGx supply voltage between -2 V and 0 V to achieve IDQ = 1200 mA. IDQ is the drain current without applying RF power. Rev. D | Page 4 of 16 Typ Max 40 23.5 0.045 Unit GHz dB dB/C 9.5 13 dB dB 29.5 30 12 37 dBm dBm % dBm mA V 1200 6 Data Sheet HMC7229 ABSOLUTE MAXIMUM RATINGS Table 4. Parameter Drain Bias Voltage (VDD) RF Input Power (RFIN) Channel Temperature Continuous Power Dissipation (PDISS), TA = 85C (Derate 107 mW/C Above 85C) Thermal Resistance, JC (Channel to Bottom Die) Storage Temperature Range Operating Temperature Range ESD Sensitivity, Human Body Model (HBM) Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. Rating 7V 21 dBm 175C 9.7 W 9.3C/W ESD CAUTION -65C to +150C -55C to +85C Class 0, passed 150 V Rev. D | Page 5 of 16 HMC7229 Data Sheet PIN CONFIGURATION AND FUNCTION DESCRIPTIONS 2 3 4 5 6 VGG1 VDD1 VDD2 VDD3 VDD4 VREF RFOUT 8 VDET VGG2 14 VDD5 13 VDD6 12 VDD7 VDD8 11 10 9 14566-002 HMC7229 1 RFIN 7 Figure 2. Pad Configuration Table 5. Pad Function Descriptions Pad No. 1 2, 14 Mnemonic RFIN VGG1, VGG2 3 to 6, 10 to 13 7 VDD1 to VDD8 VREF 8 9 RFOUT VDET Die Bottom GND Description RF Input. This pad is ac-coupled and matched to 50 . Gate Controls for the Power Amplifier. Adjust the VGG1 or VGG2 supply voltage to achieve recommended bias current. External 100 pF, 10 nF, and 4.7 F bypass capacitors are required. Drain Bias Voltages. External 100 pF, 10 nF, and 4.7 F bypass capacitors are required. DC Voltage of the Diode. This pad is biased through an external detector circuit used for temperature compensation of VDET (see Figure 35). RF Output. This pin is ac-coupled and matched to 50 . DC Voltage Representing the RF Output Power. This pad is rectified by the diode that is biased through an external resistor (see Figure 35). Die Bottom. The die bottom must be connected to RF/dc ground. See Figure 9 for the interface schematic. Rev. D | Page 6 of 16 Data Sheet HMC7229 VREF Figure 6. VREF Interface Schematic Figure 3. RFIN Interface Schematic RFOUT 14566-007 RFIN 14566-006 14566-003 INTERFACE SCHEMATICS VDET Figure 4. VGG1, VGG2 Interface Schematic 14566-008 VGG1, VGG2 14566-004 Figure 7. RFOUT Interface Schematic Figure 8. VDET Interface Schematic VDD1 TO VDD8 14566-005 14566-009 GND Figure 9. GND Interface Schematic Figure 5. VDD1 to VDD8 Interface Schematic Rev. D | Page 7 of 16 HMC7229 Data Sheet TYPICAL PERFORMANCE CHARACTERISTICS 30 30 -55C +25C +85C S21 20 28 26 GAIN (dB) RESPONSE (dB) 10 0 S11 -10 S22 24 22 -20 32 33 34 35 36 37 38 39 40 41 FREQUENCY (GHz) 14566-010 18 -40 33 35 36 37 38 39 40 FREQUENCY (GHz) Figure 10. Response Gain and Return Loss vs. Frequency Figure 13. Gain vs. Frequency at Various Temperatures 0 0 -55C +25C +85C -5 OUTPUT RETURN LOSS (dB) INPUT RETURN LOSS (dB) 34 14566-013 20 -30 -10 -15 -5 -55C +25C +85C -10 -15 -20 33 34 35 36 37 38 39 40 FREQUENCY (GHz) -30 14566-011 -20 Figure 11. Input Return Loss vs. Frequency at Various Temperatures 33 35 36 37 38 39 40 FREQUENCY (GHz) Figure 14. Output Return Loss vs. Frequency at Various Temperatures 34 34 -55C +25C +85C 32 P1dB (dBm) 32 30 28 26 5.0V 5.5V 6.0V 30 28 24 33 34 35 36 37 38 39 FREQUENCY (GHz) 40 24 33 34 35 36 37 38 39 FREQUENCY (GHz) Figure 12. P1dB vs. Frequency at Various Temperatures Figure 15. P1dB vs. Frequency at Various Supply Voltages Rev. D | Page 8 of 16 40 14566-015 26 14566-012 P1dB (dBm) 34 14566-014 -25 HMC7229 34 34 32 32 30 -55C +25C +85C PSAT (dBm) 28 30 28 26 33 34 35 36 37 38 39 40 FREQUENCY (GHz) 24 14566-016 24 33 34 35 36 37 38 39 Figure 16. PSAT vs. Frequency at Various Temperatures Figure 19. PSAT vs. Frequency at Various Supply Voltages 34 34 800mA 1000mA 1200mA 32 32 30 PSAT (dBm) 28 30 28 26 26 34 35 36 37 38 39 40 FREQUENCY (GHz) 24 33 34 35 36 37 38 39 40 FREQUENCY (GHz) Figure 17. P1dB vs. Frequency at Various Supply Currents Figure 20. PSAT vs. Frequency at Various Supply Currents 1430 35 1530 30 1375 30 1475 25 1320 25 1420 1210 10 1155 5 0 -10 -8 -6 -4 -2 0 2 4 INPUT POWER (dBm) 6 8 10 12 1365 20 POUT GAIN PAE IDD 15 1310 10 1255 1100 5 1200 1045 0 -10 14566-018 15 1265 IDD (mA) POUT GAIN PAE IDD 20 POUT (dBm), GAIN (dB), PAE (%) 35 Figure 18. Power Compression at 34 GHz (IDD is Drain Current With RF Power Applied) 1145 -8 -6 -4 -2 0 2 4 INPUT POWER (dBm) 6 8 10 Figure 21. Power Compression at 39 GHz Rev. D | Page 9 of 16 12 14566-021 33 14566-017 24 14566-020 P1dB (dBm) 800mA 1000mA 1200mA POUT (dBm), GAIN (dB), PAE (%) 40 FREQUENCY (GHz) 14566-019 26 5.0V 5.5V 6.0V IDD (mA) PSAT (dBm) Data Sheet HMC7229 Data Sheet 44 44 -55C +25C +85C 42 OIP3 (dBm) 36 36 34 32 32 34 35 36 37 38 39 40 FREQUENCY (GHz) 30 33 34 35 36 37 38 39 40 FREQUENCY (GHz) Figure 22. Output IP3 vs. Frequency at Various Temperatures Figure 25. Output IP3 vs. Frequency at Various Supply Voltages 44 60 42 55 50 40 45 38 IM3 (dBc) 800mA 1000mA 1200mA 36 34 40 33GHz 34GHz 36GHZ 38GHz 39GHz 40GHz 35 30 32 34 35 36 37 38 39 40 FREQUENCY (GHz) 20 14566-023 30 33 10 12 14 16 18 20 22 24 POUT/TONE (dBm) Figure 23. Output IP3 vs. Frequency at Various Supply Current 14566-026 25 Figure 26. IM3 vs. POUT/Tone for Various Frequencies at VDD = 5.5 V 60 60 55 55 50 50 45 45 40 35 IM3 (dBc) 33GHz 34GHz 36GHZ 38GHz 39GHz 40GHz 40 30 30 25 25 10 12 14 16 18 POUT/TONE (dBm) 20 22 24 20 14566-024 20 33GHz 34GHz 36GHZ 38GHz 39GHz 40GHz 35 10 12 14 16 18 20 22 24 POUT/TONE (dBm) Figure 24. Third-Order Intermodulation (IM3) vs. POUT/Tone for Various Frequencies at VDD = 6 V Rev. D | Page 10 of 16 Figure 27. IM3 vs. POUT/Tone for Various Frequencies at VDD = 5 V 14566-027 OIP3 (dBm) 38 34 14566-022 OIP3 (dBm) 38 30 33 IM3 (dBc) 5.0V 5.5V 6.0V 40 40 14566-025 42 Data Sheet HMC7229 9.0 0 8.5 -10 -30 -40 -50 -60 6.5 6.0 5.5 5.0 4.5 35 36 37 38 39 40 4.0 -10 14566-028 34 FREQUENCY (GHz) Figure 28. Reverse Isolation vs. Frequency for Various Temperatures -8 -6 -4 -2 0 2 4 6 8 10 12 14 INPUT POWER (dBm) Figure 31. Power Dissipation vs. Input Power for Various Frequencies at TA = 85C 10 32 1 VREF - VDET (V) 35 29 PSAT P1dB GAIN 26 0.1 0.01 +85C +25C -40C 5.0 5.2 5.4 5.6 5.8 6.0 VDD (V) 0.0001 -20 Figure 29. Gain, P1dB, and PSAT vs. Supply Voltage (VDD) at 36 GHz 32 20 PAE (%) 29 PSAT P1dB GAIN 23 5 1200 14566-030 10 1100 20 30 15 26 1000 IDQ (mA) 10 Figure 32. Detector Voltage (VREF - VDET) vs. Output Power for Various Temperatures at 38.5 GHz 25 900 0 OUTPUT POWER (dBm) 35 20 800 -10 Figure 30. Gain, P1dB, and PSAT vs. Supply Current (IDQ) at 36 GHz 0 33 34 35 36 37 38 FREQUENCY (GHz) Figure 33. PAE at PSAT vs. Frequency Rev. D | Page 11 of 16 39 40 14566-033 20 14566-032 0.001 23 14566-029 GAIN (dB), P1dB (dBm), PSAT (dBm) 7.0 -80 -90 GAIN (dB), P1dB (dBm), PSAT (dBm) 7.5 -70 33 33GHz 34GHz 36GHZ 37GHz 39GHz 40GHz 8.0 POWER DISSIPATION (W) REVERSE ISOLATION (dB) -20 14566-031 -55C +25C +85C HMC7229 Data Sheet THEORY OF OPERATION The HMC7229 is a GaAs, pHEMT, MMIC, 1 W power amplifier consisting of four gain stages in series. Figure 34 shows a simplified functional block diagram of the HMC7229. Impedances nominally matched to a 50 system also means that multiple HMC7229 amplifiers can be cascaded back to back without external matching circuitry. The input signal of the HMC7229 is evenly divided into two paths and each path is amplified through the four independent gain stages. The amplified signals are then combined at the RF output. A portion of the RF output signal is directionally coupled to a diode for detection of the RF output power. When the diode is dc biased, it rectifies the RF power and makes it available for measurement as a dc voltage at VDET. To allow for temperature compensation of VDET, a symmetrically located and identical detector circuit, minus the coupled RF power, is available via VREF. As shown in Figure 32, taking the difference of VREF - VDET provides a temperature compensated signal that is proportional to the RF output power. Similarly, multiple HMC7229 can be used with power dividers at the RF input and power combiners at the RF output to obtain higher output power levels. The HMC7229 has single-ended input and output ports with impedances nominally matched to 50 internally over the frequency range from 33 GHz to 40 GHz. Consequently, the HMC7229 can be directly inserted into a 50 system with no impedance matching circuitry required. VDD1 VDD2 VDD3 The input and output impedances are sufficiently stable compared to the variations in temperature and supply voltage that no impedance matching compensation is required. It is critical to supply very low inductance ground connections to the backside of the HMC7229, ensuring stable operation. Guidance on mounting the HMC7229 is given in the Mounting and Bonding Techniques for Millimeter Wave GaAs MMICs section. To achieve the best performance from the HMC7229 and not to damage the device, do not exceed the absolute maximum ratings. VDD4 VREF VGG1 RFOUT RFIN VGG2 VREF VDD5 VDD6 VDD7 VDD8 Figure 34. Simplified Functional Block Diagram Rev. D | Page 12 of 16 14566-034 COUPLER Data Sheet HMC7229 APPLICATIONS INFORMATION BIASING PROCEDURES The bias conditions listed at VDD = 6 V, IDQ = 1200 mA is a recommended operating point to receive optimum performance from the HMC7229. The data used in this data sheet is taken with the recommended bias conditions (see the Specifications section). The basic connections for operating the HMC7229 are shown in Figure 35 and the Theory of Operation section. The RF input and RF output are ac-coupled by internal dc block capacitors. Follow the recommended bias sequencing to avoid damaging the amplifier. Using the HMC7229 in a different bias condition may provide different performance than the performance shown in the Typical Performance Characteristics section. The amplifier gate bias can be supplied using either the VGG1 pin or VGG2 pin. Use the VDD1 to VDD8 pins while applying the drain bias to the amplifier. Testing to gather data for the HMC7229 data sheet used the VGG1 pin with the VDD1 to VDD8 pins connected together. The VDET and VREF pins are the output pins for the internal power detector. The VDET pin is the dc voltage output pin representing the RF output power rectified by the internal diode, biased through an external resistor. Use the following recommended bias sequence during power-up: 1. 2. 3. 4. 5. Connect GND to RF/dc ground. Set VGG1 or VGG2 to -2 V. Set VDD1 to VDD8 to 6 V. Increase VGG1 or VGG2 to achieve a typical IDQ = 1200 mA. Apply an RF signal the device. The VREF pin is the dc voltage output pin representing the reference diode voltage, which is biased through an external resistor. The reference diode voltage compensates the temperature variation effects on both the VREF and VDET diodes. Figure 35 shows a suggested circuit to read out the output voltage in correlation with the RF output power. Use the following recommended bias sequence during powerdown: 1. 2. 3. 4. Turn off the RF signal. Decrease VGG1 or VGG2 to -2 V to achieve IDQ = 0 mA. Decrease VDD1, VDD2, VDD3, and VDD4 to 0 V. Increase VGG1 or VGG2 to 0 V. TYPICAL APPLICATION CIRCUIT VDD1 , VDD2 VDD3 , VDD4 4.7F + 0.1F OPTION 1 VGG1 100pF SUGGESTED CIRCUIT 100pF 4.7F + 0.1F 4.7F 10k 3 4 HMC7229 VREF 1 10 13 7 8 9 RFOUT 10k 11 VDET 14 OPTION 2 VGG2 VOUT = VREF - VDET 5 6 12 -5V 10k 100pF 2 RFIN 0.1F 100pF 100pF + 100k 100k 10k +5V +5V 4.7F + 0.1F 100pF 100pF 100pF VDD5 , VDD6 4.7F + 0.1F 0.1F + VDD7 , VDD8 4.7F 14566-036 100pF 100pF Figure 35. Typical Application Circuit Rev. D | Page 13 of 16 HMC7229 Data Sheet MOUNTING AND BONDING TECHNIQUES FOR MILLIMETER WAVE GaAs MMICs MOUNTING Attach the HMC7229 directly to the ground plane eutectically or with a conductive epoxy. To route the RF signal to and from the HMC7229, use a 50 microstrip transmission line on 0.127 mm (0.005 inches) thick alumina, thin film substrates (see Figure 36). 0.102mm (0.004") THICK GaAs MMIC RIBBON BOND 0.076mm (0.003") The HMC7229 is back metallized and can be die mounted onto a system with Au/Sn eutectic preforms or with electrically conductive epoxy. The mounting surface must be clean and flat. Eutectic Die Attach It is best to use an 80% Au/20% Sn preform with a work surface temperature of 255C and a tool temperature of 265C. When the work surface is 255C and tool temperature is 265C, 90% nitrogen/ 10% hydrogen gas is applied to the work surface, maintain the tool tip temperature at 290C. Do not expose the HMC7229 to a temperature greater than 320C for more than 20 sec. No more than 3 sec of scrubbing is required for attachment. Epoxy Die Attach RF GROUND PLANE 14566-035 0.127mm (0.005") THICK ALUMINA, THIN FILM SUBSTRATE The ABLETHERM 2600BT is recommended for chip attachment. Apply a minimum amount of epoxy to the mounting surface so a thin epoxy fillet is observed around the perimeter of the HMC7229 after placing the device into position on the surface. Cure the epoxy per the schedule provided by the manufacturer. Wire Bonding Figure 36. Routing RF Signals To minimize the bond wire length, place microstrip substrates as close to the HMC7229 as possible. Typical chip to substrate spacing is 0.076 mm to 0.152 mm (0.003 inches and 0.006 inches). HANDLING PRECAUTIONS To avoid permanent damage to the device, adhere to the following precautions: * * * * * All bare HMC7229 ship in either waffle or gel-based ESD protective containers, sealed in an ESD protective bag. After opening the sealed ESD protective bag, store all chips in a dry nitrogen environment. Handle the HMC7229 in a clean environment. Never use liquid cleaning systems to clean the chip. Follow ESD precautions to protect against ESD strikes. While applying bias, suppress instrument and bias supply transients. To minimize inductive pickup, use shielded signal and bias cables. Handle the HMC7229 along the edges with a vacuum collet or a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and must not be touched with a vacuum collet, tweezers, or fingers. RF bonds made with 0.003 in. x 0.0005 in. Au ribbon are recommended for the RF ports. These bonds must be thermosonically bonded with a force of 40 g to 60 g. DC bonds of 1 mil (0.025 mm) diameter, thermosonically bonded, are recommended. Create ball bonds with a force of 40 g to 50 g and wedge bonds with a force of 18 g to 22 g. Create all bonds with a nominal stage temperature of 150C. Apply a minimum amount of ultrasonic energy to achieve reliable bonds. Keep all bonds as short as possible, less than 12 mil (0.31 mm). Rev. D | Page 14 of 16 Data Sheet HMC7229 14566-037 ASSEMBLY DIAGRAM Figure 37. Assembly Diagram Rev. D | Page 15 of 16 HMC7229 Data Sheet OUTLINE DIMENSIONS 2.794 4 3 2 0.102 0.130 0.130 0.0178 0.102 6 5 7 0.150 0.391 2.380 0.201 0.201 8 1 0.201 0.201 0.391 9 0.890 0.150 13 14 12 11 10 0.350 0.350 0.150 0.150 0.350 0.0102 0.150 0.150 0.216 0.150 0.851 0.0813 0.201 SIDE VIEW 07-29-2016-A 0.135 Figure 38. 14-Pad Bare Die [CHIP] (C-14-4) Dimensions shown in millimeters ORDERING GUIDE Model1 HMC7229 HMC7229-SX 1 Temperature Range -55C to +85C -55C to +85C Package Description 14-Pad Bare Die [CHIP] 14-Pad Bare Die [CHIP] The HMC7229 and HMC7229-SX are RoHS compliant parts. (c)2016-2018 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D14566-0-5/18(D) Rev. D | Page 16 of 16 Package Option C-14-4 C-14-4 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Analog Devices Inc.: EVAL01-HMC7229LS6 HMC7229LS6 HMC7229LS6TR