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COMCHIP
SOT-323
Dimensions in inches (millimeters)
MDS0302003A
Page 1
.056(1.4).047(1.2)
.004 (0.1) max.
.087 (2.2)
.016 (.40) .016 (.40) max.
Top View
.087 (2.2)
.006(0.15)
.044(1.10)
.070 (1.8)
.045 (1.15)
.002(0.05)
.078(2. 0)
.035(0.90)
.016 (.40)
.054 (1.35)
Rating Symbol Value Units
Continuous Reverse Voltage V
R
70 V
DC
Peak Forward Current I
F
215 mAdc
Peak Forward Surge Current I
FM
(surge) 500 mAdc
Characteristic Symbol Max Units
Total Device Dissipation FR– 5 Board(1) T
A
= 25°C 225 mW
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
șJA
556 °C/W
Total Device Dissipation Alumina Substrate,(2) T
A
= 25°C 300 mW
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
șJA
417 °C/W
Junction and Storage Temperature T
J
, T
st
g
–55 to +150 °C
Characteristic (OFF CHARACTERISTICS) Symbol Min Max Units
Reverse Breakdown Voltage ( I
(BR)
= 100 uAdc ) V
(BR)
70 - Vdc
Reverse Voltage Leakage Current V
R
= 25 Vdc, T
J
= 150°C -30
V
R
= 70 Vdc -2.5
V
R
= 70 Vdc, T
J
= 150°C -50
Diode Capacitance (V
R
= 0, f = 1.0 MHz)) C
D
1.5 pF
Forward Voltage I
F
= 1.0 mAdc -715
I
F
= 10 mAdc -855
I
F
= 50 mAdc -1000
I
F
= 150 mAdc - 1250
Reverse Recovery Time (I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0mAdc) R
L
= 100ȍ Trr 6.0 nS
mV
1.FR–5 = 1.0 X 0.75X 0.062 in. 2.Aluminum = 0.4X 0.3X 0.024 in. 99.5% aluminum.
P
D
Electrical Characterics (TA = 25°C unless otherwise noted)
I
R
VF
Maximum Ratings
Thermal Characteristics
P
D
uAdc
CATHODE
1
2
BAV99W
ANODE
CATHODE
3
ANODE
1
2
CATHODE
3
ANODE
CATHODE
1
2
ANODE
CATHODE
3
ANODE
CATHODE
1
2
ANODE
CATHODE
3
ANODE
BAL99W
BAW56WBAV70W
3
21
Voltage: 70 Volts
Current: 215mA
BAV99W Thru BAW56W
Features
Fast Switching Speed
Surface Mount Package Ideally Suited
for Automatic Insertio
For General PurposeSwitching Applications
High Conductance
Mechanical data
Case: SOT - 323, Plastic
Approx. Weight: 0.008 gram
This diodes is also available in other
chip inside withtype
configurations including a dual common
cathode with type designation BAV70W,a dual
common anodes with type designation
BAW56 and single
Designation BAL99W
Surface Mount Switching Diode
RATING AND CHARACTERISTIC CURVES (BAV99W Thru BAW56W)
Surface Mount Switching Diode
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COMCHIP
MDS0302003A
Page 2
100
0.2 0.4 VF, Forward Voltage (V)
0.6 0.8 1.0 1.2
10
1.0
0.1
TA = 85
°
C
10
0VR, Reverse Voltage (V)
1.0
0.1
0.01
0.001 10 20 30 40 50
0.68
0VR, Reverse Voltage (V)
0.64
0.60
0.56
0.52
CD, Diode Capacitance (pF)
2468
IF, Forward Current (mA) (mA)
Figure 2. Forward Voltage Figure 3. Leakage Current
Figure 4. Capacitance
TA = –40
°
C
TA = 25
°
C
T
A = 150°C
T
A = 125°C
TA = 85
°
C
TA = 55
°
C
TA = 25
°
C
IR, Reverse Current (
µ
A)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
+10 V 2.0 k
820
Ω
0.1
µ
F
DUT
VR
100
µ
H0.1
µ
F
50
Ω
Output
Pulse
Generator
50
Ω
Input
Sampling
Oscilloscopes
tr
tpt
10%
90%
IF
IR
trr t
IR(REC) = 1.0 mA
Output Pulse
(IF = IR = 10 mA; Measured
at IR(REC) = 1.0 mA)
IF
Input Signal
Figure 1. Recovery Time Equivalent Test Circuit
