DIOTEC ELECTRONICS CORP. Data Sheet No. FSDP-101-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF DO-41 PACKAGE Low cost SERIES 1N4933 - 1N4937 DO - 41 Low leakage LL Low forward voltage drop BD (Dia) High current capacity BL Fast switching for high efficiency Color Band Denotes Cathode MECHANICAL DATA LL Case: JEDEC DO-41, molded plastic (U/L Flammability Rating 94V-0) Terminals: Plated axial leads LD (Dia) Soldering: Per MIL-STD 202 Method 208 guaranteed Sym Polarity: Color band denotes cathode BL Mounting Position: Any BD Weight: 0.012 Ounces (0.34 Grams) LL LD Minimum In mm Maximum In mm 4.1 0.205 5.2 0.103 2.6 0.107 2.7 1.00 0.028 25.4 0.71 0.034 0.86 0.160 MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive loads, derate current by 20%. PARAMETER (TEST CONDITIONS) RATINGS SYMBOL Series Number UNITS 1N4933 1N4934 1N4935 1N4936 1N4937 100 200 400 600 Maximum DC Blocking Voltage VRM 50 Maximum RMS Voltage VRMS 35 70 140 280 420 Maximum Peak Recurrent Reverse Voltage VRRM 50 100 200 400 600 Average Forward Rectified Current @ TA = 75 oC, Lead length = 0.375 in. (9.5 mm) Peak Forward Surge Current ( 8.3 mSec single half sine wave superimposed on rated load) Maximum Forward Voltage at 1 Amp DC Maximum Reverse Recovery Time (IF=1A, VR=30V - See Fig. 5) Maximum Average DC Reverse Current At Rated DC Blocking Voltage @ TA = 25oC o @ TA = 100 C Typical Thermal Resistance, Junction to Ambient (Note 1) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range VOLTS IO 1 IFSM 30 VFM 1.2 VOLTS TRR 200 nS IRM 5 100 A RJA 41 C/W AMPS CJ 15 pF TJ, TSTG -65 to +175 C NOTES: (1) Thermal resistance from junction to ambient with diode mounted on PC Board and lead lengths = 0.375 in. (9.5 mm) (2) Measured at 1MHz & applied reverse voltage of 4 volts 4.97ffsdp1 H21 DIOTEC ELECTRONICS CORP. Data Sheet No. FSDP-101-2B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 1 AMP FAST RECOVERY SILICON DIODES RATING & CHARACTERISTIC CURVES FOR SERIES 1N4933 - 1N4937 50 40 JEDEC Method 8.3 mS Half Sine Wave TJ = 150 oC 30 Single Phase, Half wave, 60 Hz Resistive and Inductive Loads 20 10 0 Ambient Temperature, oC 10 1 100 Number of Cycles at 60 Hz FIGURE 1. FORWARD CURRENT DERATING CURVE FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT 100 10 T J = 25 oC 1.0 f = 1 MHz 10 0.1 TJ = 25 oC Pulse Width = 300 S 0.1 0.1 0.01 Instantaneous Forward Voltage (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE 50 noninductive 1 10 Reverse Voltage, (Volts) FIGURE 4. TYPICAL JUNCTION CAPACITANCE PER DIODE 10 noninductive TRR 0.5 D.U.T. (+) (-) 25 VDC (APPROX) 0.0 PULSE GENERATOR (Note 2) (-) 1 noninductive (+) -0.5 OSCILLOSCOPE (Note 1) -1.0 NOTES: (1) Rise time = 7nS max., input impedance = 1 Megohm, 22 pF (2) Rise time = 10nS max., source impedance = 50 ohms H22 Set time base for 10nS/cm 1 cm FIGURE 5. REVERSE RECOVERY TEST SETUP AND TIME CHARACTERISTIC 4.97bfsdp101