GE SOLID STATE 3875081 G E SOLID STATE High-Speed Power Transistors 01, DE se7soa1 o017097 1 i 2N2270 Silicon N-P-N Planar Transistor General-Purpose Type for Smali-Signal, Medium-Power Applications Features: a Minimum gain-bandwidth product = 100 MHz; useful in applications fram dc to 20 MHz a Operation at high junction temperatures Planer construction for low-noise and low-leakage characteristics = Very low output capacitances The RCA-2N2270 is a silicon n-p-n planar transistor intended for a wide variety of small-signal and medium-power applications in military and industrial equipment. It features exceptionally low noise and leakage characteristics, and very low output capacitance. The 2N2270 is supplied in a TO-205AD package. MAXIMUM RATINGS, Absolute-Maximum Values: * COLLECTOR-TO-BASE VOLTAGE........s-ncerecerressecereane * COLLECTOR-TO-EMITTER VOLTAGE: With external base-to-emitter resistance (Ree) = 10N......-+.-: With bS@ OPEN ....ccecenccesescnete tener ercseees * EMITTER-TO-BASE VOLTAGE .........+6+- * COLLECTOR CURRENT * TRANSISTOR DISSIPATION: At case temperatures up to 25C ....... es eeeeeeeee ee At case temperatures above 25C .....s.seeeeeeres At free-air temperatures up to 25C At free-air temperatures above 26C .....ceeeeree ee ceeenee cence * TEMPERATURE RANGE: Storage and operating (Junction) * LEAD TEMPERATURE (During soldering): At distance = 1/16 in. (1.58 mm) from seating plane for 10s max. * In accordance with JEDEC registration data format (JS-6 RDF-1). 100 O1E 17087 D T+3/s-23 File Number 24 TERMINAL DESIGNATIONS 6 E (case) JEDEC TO-205AD on seen en eneeeeterenee Vcso 60 Vv cent ee neenneeeenes Veer 60 Vv Vceo 45 Vv 7 Vv vedas ee eeeeeneeeneens 1 A 5 Ww See Fig. 1 1 Ww sence ee eneaeeereeeneens See Fig. 1 seenewencerenetes Tato, Ta -65 to +200 C satan eenecconeneee Te 255 C 0640 D-O05 G E SOLID STATE 3875081 G E SOLID STATE O1 DE f3a7soa1 0017044 3 01& 17098 oT S3I-25 High-Speed Power Transistors ELECTRICAL CHARACTERISTICS, at Case Temperature (Tc) = 25C unless otherwise specified TEST CONDITIONS LIMITS VOLTAGE CURRENT CHARACTERISTIC Vde mA de 2N2270 UNITS Vee VcE VBE lo lp Min. Max. *lIcBo 60 | 005 A Tc = 150C 60 - 50 H * I lEBO -5 0 - 0.1 BA *| VipR)EBO 0 7 | - y te =0.1mA *| ViBRICBO 0.1 60 _ v aly a certsus) 1008 60 - v Ree = 102 VeEolsusl i008 | oO |} 45 - Vv * | Veg lsat) 1505 | 15 0.9 *! Vee (sat) 150 | 15 | 1.2 Vv *lhee 10 1508 50 200 10 1 30 - *1 hfe f= 1kHz 10 5 50 275 * | [heel f= 20 MHz 10 50 5 _ *l ty 10 60 100 - MHz *1NF f= 1kHz Rg=1KQ 10 0.3 - 10 dB BW = 1 Hz *Iton + torr (See Fig. 8) 30 ns * Cob \p=0 10 - 15 pF *1Cip 0.5 0 - 80 pF *1Rasc - 35 | cay * I Raja - 175 * In accordance with JEDEC registration data @ CAUTION: The sustaining voltages Vogalsus} and Veertisus) MUST NOT be measured on a curve tracer. b pulsed; pulse duration 300 ys, duty factor <1 8%, 2N2270 10% 0641 D-06 G E SOLID STATE 01 DE Bsersoa, convosss fF 3875081 GE SOLID STATE 0 - _ High-Speed Power Trar istors 1E 17099 D T 3 } aS 2N2270 JO-EMITTER VOLTAGE (Vce)+!0V * MAXIMUM TRANSISTOR DISSIPATION=-~ WATTS OC FORWARD-CURRENT TRANSFER RATIO thee) =50-25 0 25 SO 75 100 125 [50 175 200 TEMPERATURE*C COLLECTOR CURRENT (Ic)mA ezceemeins 92cs-I72A2 Fig. 1 Rating Chart. Fig. 2 Typical de forward-current transfer ratio characteristics. BASE INPUT. 226 C o COLLECTOR CURRENT (I)mA a a w = o s = a a =z & S S a 3 4 6 3 COLLECTOR-TO-EMTTER VOLTAGE (VcEIV TO-EMITTER VOLTS (Vce) 92CS-IN75R3 9208-11169 Fig. 3 Typical collector characteristics. Fig. 4 Typical collector characteristics. GIRCUIT, BASE INPUT. RATIO thy) 5 3 4 Z 5 NOISE FIGURE {NF)db COLLECTOR CURRENT (Ih mA 92g-1N7IR2 COLLECTOR MILLIAMPERES (Ic) 92CS-INTORI Fig. 5 Typical small-signal forward-current Fig. 6 Typical af noise-figure characteristics, ratio characteristics. 102 0642 D-07 G E SOLID STATE On DE Bp sa7soa1 oo17100 4 ._ 3875081 GE SOLID STATE O1 17100 0) Trsl-23 High Speed Power Transistors 0643 ULSE al GENERATOR D-08 2N2270 | COLLECTOR CURRENT (Ic}s0 EMITTER CURRENT (I_)=0 FREE~AIR TEMPERATURE (Trale2s o CET EMITTER-TRANSITION en APACITANCE FOR Vogl Fn _| 6 J lt it ri OUTPUT CAPACITANCE FOR Vox CAPACITANCE - PICOFARADS - =10 REVERSE@IAS VOLTS (Vge OR Vog) 100 92csH195, Fig. 7 Typical emitter-transition-capacitance and output- capacitance characteristics. 50 #20 ALL RESISTANCE VALUES ARE LN OHMS * Morcory Typ Rese and Fall Tames < Temes #0 Adjust for 1 Volt Puise at AX 78? Rise Time < G4 eeee Input impecacor (Miccugh Probe) = 2000 ohms TYPE INZO6s +t rs as oj__| a \ Sf +18 QUTPUT PULSE or INPUT - PULSE WAVE FORM WAVE FORM aT ae 10% Yop 90% | ac +BY ror ath, 92c5-z0235 Fig. 8 Tast circuit for measurement of saturated switching time and associated waveforms. 103