MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon NPN Transistor BD179 BD179-10 . .. designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing POWER TRANSISTORS complementary or quasi complementary circuits. NPN SILICON e DC Current Gain hfe = 40 (Min) @ Ic = 0.15 Ade 80 VOLTS e BDi79 is complementary with BD180 30 WATTS MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vde Collector~Base Voltage . VCBO 80 Vde Emitter-Base Voltage VEBO 5.0 Vde Collector Current Io 3.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ To = 25C Pp 30 Watts Derate above 25C - 240 mwitG Operating and Storage Junction TJs Tstg 65 to +150 C Temperature Range THERMAL CHARACTERISTICS CASE 77-08 Characteristic Symbol Max Unit TO-225AA TYPE Thermal Resistance, Junction to Case 68JC 4.16 CW ELECTRICAL CHARACTERISTICS (Tc = 25C unlass otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Sustaining Voltage* V(BR)CEO 80 _ Vde (Ig = 0.1 Ade, Ig = 0) Collector Cutoff Current IcBO _ 0.1 mAdc (Vcp = 80 Vado, IE = 0) Emitter Cutoff Current IEBO : 1.0 mAdce (VBE = 5.0 Vde, Io = 0) DC Current Gain nFE . (Ilo = 0.15 A, VCE = 2.0 V) BD179-10 83 160 (I = 1.0 A, VCE = 2.0 V) ALL 16 _ CollectorEmitter Saturation Voltage* VCE(sat) _ 0.8 Vde (Ig = 1.0 Ade, Ig = 0.1 Ade) Base-Emitter On Voltage* VBE(on) _ 13 Vde (Ig = 1.0 Ade, Veg = 2.0 Vde) Current-Gain Bandwidth Product fT 3.0 _- MHz (Ic = 250 mAdc, VCE = 10 Vde, f = 1.0 MHz) Pulse Test: Pulse Width = 300 As, Duty Cycle 3 2.0%. REV7 3-168 Motorola Bipolar Power Transistor Device Data BD179 BD179-10 40 = Cee ee moe bo 5 7.0 5.0 iB 3.0 The Safe Operating Area Curves indicate Ic Vc limits c 20 ~. below which the device will not enter secondary breakdown. 5 de Collector load lines for specific circuits must fall within the ap- & 10 Ty = 150C _. plicable Safe Area to avoid causing a catastrophic failure. To rE 07 insure operation below the maximum Ty, powertemperature ; 0.5 SECONDARY BREAKDOWN derating must be cbserved for both steady state and pulse 03- 77 THERMAL LIMITATION power conditions. . 3 02 (BASE-EMITTER DISSIPATION IS. SIGNIFIGANT ABOVE Ig = 2.0 AMP} PULSE DUTY CYCLE < 10% 5.0 7.0 70 Voge, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. Active Region Safe Operating Area 1.0 100 0.8 0.6 0.4 0.2 Vg, COLLECTOR-EMITTER VOLTAGE (VOLTS) ag ho 2 to 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 Ip, BASE CURRENT (mA) 2. Collector Saturation gs LLY Voge =2.0V. - - Ty 25C 3 500 LW 5 300 200 a Z a 09 E 100 Ty= +] = @ Iollg = 10 $5 fe 20 Tj= + 25C _ = 06 & 50 3 @VcE=2.0V Oo > 2 30 T= + 55C 03 i 20 & @lolig = 10 10 0 102030 50 200 300 500 1000 2000 50 10 30 Ig, COLLECTOR CURRENT (mA) Ig, COLLECTOR CURRENT (mA) re 3. Current Gain 4, On READ TIME AT ty 02 is TY(pk) - Te = Pipk) Suc) DUTY CYCLE, D = ty/tg 10 = 07 0.5 r g 03 = e 0,2 Qo Be SINGLE PULSE aiclt =r) 8c Pink Be 04 8G = 4.16CAY MAX . & z 0,07 8c = 3.5C/W TYP 0.05 D CURVES APPLY FOR POWER = - ty -e : 0.03 PULSE TRAIN SHOWN tS Wr 0.02 0.03 0.05 0.1 02 03 O05 10 20 30 50 10 20 30 50 100 = 200 300 500 = 1000 t, TIME or PULSE WIDTH (ms) Figure 5. Thermal Response Motorola Bipolar Power Transistor Device Data 3-169 MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD180 Plastic Medium Power Silicon 7 3.0 AMPERES PNP Transistor POWER TRANSISTOR . ; ; . ee PNP SILICON ... designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing 80 VOLTS complementary or quasi complementary circuits. 30 WATTS DC Current Gain - hfe = 40 (Min) @ Io = 0.15 Ade BD180 is complementary with BD179 MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 80 Vde Collector-Base Voltage Voso 80 Vde Emitter-Base Voltage VEBO 5.0 Vde Collector Current lo 3.0 Adc Base Current Ip 1.0 Ade Total Power Dissipation @ Tg = 25C Pp 30 Watts Derate above 25C 240 mW/G Operating and Storage Junction Tyr Tstg 65 to +150 C Temperature Range THERMAL CHARACTERISTICS CASE 77-08 Characteristic Symbol Max Unit TO-225AA TYPE Thermal Resistance, Junction to Case 6c 4.16 CW ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) Characteristic Symbof Min Max Unit Collector-Emitter Sustaining Voltage* V(BR)}CEO 80 Vde {Ic = 0.1 Ade, Ip = 0} Collector Cutoff Current ICBO mAdc (VcB = 45 Vde, IE = 0) _ _ (VcB = 80 Vdc, IE = 0) BD180 _ 1.0 Emitter Cutoff Current lEBO _ 1.0 mAdc (VBE = 5.0 Vde, Ic = 0) DC Current Gain hee (Io = 0.15 A, Voge = 2.0 V) 40 250 (Ig = 1.0 A, VoE = 2.0 V) 15 Collector~Emitter Saturation Voltage* VCE(sat) _ 0.8 Vde (I = 1.0 Ade, Ip = 0.1 Ade) BaseEmitter On Voltage VBE(on) - 1.3 Vde (Ig = 1.0 Ade, VcE = 2.0 Vde} Current-Gain Bandwidth Product ft 3.0 MHz (Ig = 250 mAde, VoE = 10 Vdo, f = 1.0 MHz) * Pulse Test: Pulse Width S 300 ps, Duty Cycle S 2.0%. REV 7 3-170 Motorola Bipolar Power Transistor Device Data BD180 . 10 . * 7.0 = - ar 5.0 - Lae z 3.0 - The Safe Operating Area Curves indicate I VCE limits F2 2.0 below which the device will not enter secondary breakdown. & do Collector load lines for specific circuits must fall within the ap- = OE: Ty a4 ---_. plicable Safe Area to avoid causing a catastrophic failure. To E 0.7 * -<- jnsur operation below the maximum TJ, powertemperature 05 SECONDARY BREAKDOWN LIMIT: ___ derating must be observed for both steady state and pulse - 03, THERMAL LIMITATION powerconditions. oo , (BASE-EMITTER DISSIPATION !S - - a @ 02 SIGNIFICANT ABOVE Ic = 20 AMP) a ee PULSE DUTY CYCLE < 10% a . Lo - 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. Active Region Safe Operating Area 1.0 Ty = 25C 08 0.6 04 0.2 VE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.2 0.5 1.0 2.0 6.0 10 20 50: 100 200 Ip, BASE CURRENT (mA) Figure 2. Collector Saturation Region 1000 15 & 700 i 500 VoE= 2.0 _ 4 3 _ Tj = 28C 300 B 200 Ty= + 150C . = 2 0.9 % 400 Ty =+25C . @ lollp = 10 = 70 a 06 c 60 Ty= 55C = VBE @ VoE = 2.0V S wh 0.3 - Ban 10 20 3.05.0 10 20 : 2.0 3.0 10 2030 50 100 200900 500 1000 I, COLLECTOR CURRENT (mA) Ic, COLLECTOR CURRENT (mA) 9 3, Current Gain 4, On ok G(T Z 0.5 Wo 08 Es 0.2 oO Be a, SINGLE PULSE ict) =r) O10 ie 0. 8G = 4.18GW MAX a 2 0.07 @J0 = 3.5C)W TYP ui 0.05 _ D.CURVES APPLY FOR POWER - 4 a F 003 PULSE TRAIN SHOWN mag Pune 0.02 READ TIME AT ty = Tyipk) - To = Pope) 8st) DUTY CYCLE, D ty/te ar 0.020.038 0.05 01 62 03 05 10 20 30 50 10 20 30 50 100 =.200 300 500 1000 , TIME or PULSE WIDTH (ms) Figure 5. Thermal Response Motorola Bipolar Power Transistor Device Data 3-171