- 18 - FE & kK #& 8 B Rm mf 4 te (Ta=25C) f tt A ie Ga a) || vee Vast EX| 1# EX|Pp/Pcx} Iss Tol _Ipsg fort Vas(off) gm 7 & ay 9 (max) | Yas (nin) max) Vos |(min)|(max) Vos | Ip. | (min) | (typ) |Yos | Ip Ky ) pee, Ye] CA) fe, | AY |) AD | A) LM) |] | () |) | | 6S) SI () | (A) 285106 RS LF A, A~SW in PiD 50/GDS -10m}G} 150m In 30)-1. 2m} -idm) -10| 0.3 6] -10)-0.1z im 4m} -10] IDSS 283107 ; RS LF A, A-S# i Pip 25/GDS -10m/G} 200m In 25{-2. 6m| -20m| -10| 0.2 2} -10}-0.1u] 12m) 30m} -10; IDSS 285108 ; RS LF LN A ly PD 25) GDS -10mjG) 200m dn 25)-2. 6m) -20m}) -10) 0.15 2) -10)-O. 1a 8m) 22m) -10) IDSS 25J109 eS LF LN A J PiD 30/GDS -10mjG) 200m In 30|-2. 6m} -20m| -10; 0.2 2] -10)-0. 14 8m; 22m} -10) IDSS 28J110 He LF A, A-SW J PiD 25;GDS -10m|G} 400m In 25); -5m| -30m] -10| 0.3 2) -10]-0.24] 25m) 60m} -10) IDSS 2SJ111 Re LF EN A J P\|D 25|GDS -10miG| 400m In 25| -5m) ~30mj -10{ 0.3 2} -0|-0.i4 | 30m] 40m} -10) IDSS 285112 A HS PSW, RF PA MOS PIE -100|DSS} +420/S -10/D 100] +1luz) +20 -lm; ~80 -2 ~5}; -10 ~Im) 1.5 2; ~10 -5 283113 Ay HS PSW, RF PA MOS PIE -100/DSS} -20)S -10/D 100) lu} +20 -1m] -80 -2 -5} -10 -1m} 1.5 2} -10 -5 2sJit4 BY HS PSW, RF PA MOS PIE -200|DSS| +20)$ -8|D 100; tle} +20 -im|-160 -2 -5; -10 -1m 1] 1.8] -10 ~4 aSJ115 RS LF PA MSO PIE ~160/DSS| +20|S ~8!1D 100) +in| +20 ) -0.8 -2.81 -10} 100m 1 2] -10 -2 283116 Ay HS PSW, RF PA MOS PIE -400/DSS} +20/S -8/D 125] +1) 20 ~1m|-320 -2 -5} -10 ~im 1} 1.6] -20 -4 aSJ117 Aw HS PSW, RF PA MOS PIE -400/ DSS; +20)S -21D 40; 1] 20 -1m)-320 -2 -5; -10 -im| 0.4) 0.7) ~20 -1 255118 [er HS PSW,RF PA Mas PIE -140(DSS| +208 -81D 100) tly} #20 -Im|-120 -2 -| -10 -1m Ll 1.8) -10 -4 285119 | Ear HS PSW, RF PA MOS PIE -160/DSS; +20/S -8/D 100) +1} 20 1mj-140 ~2 -5) -10 -1m 1} 1.8] -10 -4 28J120(L) (S) [ ease HS PSW, RF PA MOS PIE -40|DSS| +20]S ~2|D 10; tig] 20 ~1m| -35 -1 -4) -10 Im} 0.1} 0.25] -10 -1 28J122 AZ HS PSW, RF PA MOS PIE -60/DSS} +20;S -10|D 50) tin} +20 -In} -50 -2 5; -10 -Imj 1.5} 2.2] -10 - 283123 HS LF PA, HS SW MOS PIE -10)DSS} 20/8 -10)D 30] +1nj +20 -1mj -70 -1 3) -5 -1m 1}o1T} -8 ~2 285125 =e LF PA, A-SW J PID 50 | DGO 10m/G) 150m In 30) -1m| -12m] -10] 06.3 6} -10] -10g} 1. 5m 4m; ~10; IDSS 283126 RS HS SW MOS PIE -60;/DSX; +20/S ~10/D 40)/+100n| +20 -im) -60) ~1.5] -3.5) -10 -Im) 1.5] 2.5) -10 - 285127 AM HS PSW MOS PIE ~1201DSS} -E15)S -10)D SO; 10) 12 O. 25)-100 -2 ~4) -10 \n 3 5) -10 -5 283128, 1287 NEC SW MOS PIE -100/DSS|} +20)}S 2!/D 20)+100n} +20 -10 |-100 -1 ~3] ~-10 -1m 1] 1.6] -10 -1 285129 EF LF A J PID 50)/GDS -10miG} 300m] 100n 30/-0. 5m) -14m} -10) 0.2 8} -10| -10z 3m ~10; IDSS 2SJ130(L)(S) | YZ HS SW MOS PIE -300|DSS; +2018 -11D 20/+10u| +16 -0. 1m{-240 -2 -4) -10 ~Imj 0.25, 0.4] -20; -0.5 285131 yo- [sw MOS PIE -170/DSS}; 20/8 ~10|D 100) +1} +20 -1.9] -4.1] -10] -0.65] 1.6 2; -10 -2 285132, 1322 NEC [sw MOS PIE -30/DSS} +2015 42d 20)+100n) +20 -10u) -30 -1 -3) -10 -1m 1] 1.8] -10 -1 285133, 1332 NEC [sw MOS PIE -BO|DSS} 420)S +2'1D 20/+100n) +20 -10 4; ~-60 -1 ~3/ -10 -ln 1) 1.8! -10 -1 28J134 NEC SW MOS PIE -100|DSS} +20]S +61) 40]+100n] +20 -10 4 |-100 -1 73) -10 -1n 1 4) ~10} -3.5 28J135 NEC SW MOS PIE -100|DSS} +20|S +54D 30}+100n) +20 ~10 4 )-100 -1 -3) -10 -Im 1 4) -10) ~3.5 285136 NEC SW MOS PIE ~60/DSS; +20/S] +12)D 40}+100n) +20 -104| -60 -1 ~3; -10 -in 2 5} -10; -6.5 285137 NEC SW MOS PLE -60(DSS; 4201S) +101D 301+100n| 20 ~10u | -60 -1 -3| -10 -1m 2 | -10{ -6.5 = & % = (Ta=25%) mi ayTy Cis Crs NF Rps (ON) Hn i) wg (typ) | (typ) |Vas |Vps |typ|max] f Ro max) |Ves | Ip = th a ee AVAY cc) GD GF GF SPF dio | |S | @ 18| 3.6] 01 -10 210typ| 0 Sm 105A DSG 28]108 105) 32/0] -10 A0typ) 0) Sm 28K366 10B| DGS 28J107 [105 32 0] -10/ 1] 10) to; 1k 28K370 70B| DGS 285108 95 as} of -10/1.5| 11| 10, tk TA VGS=20nVmax 2SK389 148|Dual FET 25108 | 185 55] 0| -10 20typ) 0] -15m 28k363 82| DGS 28)110 185 55] 0/ -10) 1) 2) 1k] 100 2SK368 82| DGS ISI 1100 90] 9| ~10 I YDS (ON)=-1. 75max ID=-5A, YGS=-15V 2SK398 28B) GSD, f08283113 | 255112 i100] 90)o| -10 0.35] -15| 5 2SK399 149] GDS 2SI113 1000 7o| 0] -10 0.8) -15) -4 2SK400 143|GDs asst | soo} 110] 0] -10 WDS (ON) =-7max 12-5, VGS=-10V 28K405 119]GDS 28J115 1400 25] 0] -10 2.25] -15| 4 2SK298 28B| GSD assi16 520 15] 0! -10 7-15) <1 2SK310 116B| GDS 2ssi17 1050; 80) 0] 10 0.5] -15] 4 aSK413 143/GDs 2SJ118 1050 a0] ol -10 0.5) -15) 4 2SKA14 149| GDs 2ss119 150 25] 0] -10 15| -15] 1 2SK416 150|GDs 284120 (L) (S) 1200) 170] 0 -10 0.2| -15) 5 2SK428 116B) GDS 2SJ122 | 650, 250] 0) 10 DS (ON) =-2. 8max 1D=-7A, VGS=-15V aSK442 138 | GDS 28]123 isi 3.3) 0] ~10 22otyp) 0] om 128) D8G1G2 28/125 880/280) 0) -10 0.4[ -10| 5 182|GDs, eey2ss147 | 259126 | 1450/75] 0] ~10 0.25) 10 5 116B/GDS 283127 1000; 28/ 0| t0 1) -10/ -1]ton=60ns, toff=150nstyp | ID=-1A, VDD=-50V 276/2:281/ZM7 Yok ICRI )28)128, 1282 al 3.8) | -10 NV=80nVmax Rg=100kQ, Flat 21 3B| DGS wie CS 235] 16) 0) 10 8.5; -10) -0.5 150]6Ds fai 1100 50} 0] -10 VDS (ON) ==5. 5max ID=-4A, VGS=-10V 2SKT22 207|GDS 28/131 730 45} 0) 10 0.4] -10] 1] ton=60ns, toff=L50nstyp | ID=-1A, VDD=-15 276/2:281|2:M7 Yok ICH | 289132, 1322 | 730 as} ol -10 0.8| -10) -1|ton=60ns, toff=150nstyp | 1D=-1A, VDD=~30 276/2:281/Z:M7 ek ICRI 259133, 1332 | 1600 65] 0) -10 0.6| -10| -3.5| ton=45ns, toff=95nstyp | ID=~3. 5A, VDD=-50V 164|GDs asi3t Ci 1600 65} 0] -10 0.6] -10) -3.5/ton=45ns, toff=95nstyp | 1D=3. 5A, VDD=-50V 274| GDS 281135 1500 80/0) -10 0.3] -10] ~8.5}ton=70ns, toff=165nstyp | 1D=-8. 5A, VDD=-30V 164|GDS 28/136 Cd =< go] oj -10f | 0.3| -10] -6.|ton=70ns, toff=165nstyp | 1D=-6. 5A, VDD=-30V 274 GDS ~__[essis7