LESHAN RADIO COMPANY, LTD.
M1–1/2
1
3
2
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter V oltage V CEO –45 V
Collector–Base V oltage V CBO –50 V
Emitter–Base V oltage V EBO –5.0 V
Collector Current — Continuous I C–500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P D
TA = 25°C 225 mW
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R θJA 55 6 °C/W
Total Device Dissipation P D
Alumina Substrate, (2) TA = 25°C 300 mW
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R θJA 417 °C/W
Junction and Storage Temperature T J , T stg –55 to +150 °C
DEVICE MARKING
BC807–16LT1 = 5A; BC807–25LT1 = 5B; BC807–40LT1 = 5C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA) V (BR)CEO –45 — — V
Collector–Emitter Breakdown Voltage
(VEB = 0, I C = –10µA) V (BR)CES –50 — — V
Emitter–Base Breakdown V oltage
(IE = –1.0 µA) V (BR)EBO –5.0 — — V
Collector Cutoff Current I CBO
(VCB = –20 V) — — –100 nA
(VCB = –20 V, T J = 150°C) — — –5.0 µA
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
BC807-16LT1
BC807-25LT1
BC807-40LT1
1
EMITTER
3
COLLECTOR
2
BASE
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)