LESHAN RADIO COMPANY, LTD.
M1–1/2
1
3
2
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter V oltage V CEO –45 V
Collector–Base V oltage V CBO –50 V
Emitter–Base V oltage V EBO –5.0 V
Collector Current — Continuous I C–500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P D
TA = 25°C 225 mW
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R θJA 55 6 °C/W
Total Device Dissipation P D
Alumina Substrate, (2) TA = 25°C 300 mW
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R θJA 417 °C/W
Junction and Storage Temperature T J , T stg –55 to +150 °C
DEVICE MARKING
BC807–16LT1 = 5A; BC807–25LT1 = 5B; BC807–40LT1 = 5C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA) V (BR)CEO –45 V
Collector–Emitter Breakdown Voltage
(VEB = 0, I C = –10µA) V (BR)CES –50 V
Emitter–Base Breakdown V oltage
(IE = –1.0 µA) V (BR)EBO –5.0 V
Collector Cutoff Current I CBO
(VCB = –20 V) –100 nA
(VCB = –20 V, T J = 150°C) –5.0 µA
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
BC807-16LT1
BC807-25LT1
BC807-40LT1
1
EMITTER
3
COLLECTOR
2
BASE
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
LESHAN RADIO COMPANY, LTD.
M1–2/2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain h FE
(IC= –100 mA, VCE = –1.0 V) BC807–16 100 250
BC807–25 160 400
BC807–40 250 600
(IC = –500 mA, VCE = –1.0 V) 40
Collector–Emitter Saturation V oltage V CE(sat) –0.7 V
(IC = –500 mA, IB = –50 mA)
Base–Emitter On Voltage V BE(on) –1.2 V
(IC = –500 mA, IB= –1.0 V)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product f T 100 MHz
(IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz)
Output Capacitance C obo —10pF
(VCB = –10 V, f = 1.0 MHz)
BC807-16LT1 BC807-25LT1 BC807-40LT1