74LVX14
LOW VOLTAGE CMOS HEX SCHMITT INVERTER
March 1999
■HIGHSPEED:tPD =6.8ns(TYP.)atVCC =3.3V
■LOWPOWERDISSIPATION:
ICC =2µA (MAX.) at TA=25o
C
■LOWNOISE:
VOLP =0.3V (TYP.)at VCC =3.3V
■SYMMETRICALOUTPUTIMPEDANCE:
|IOH|=IOL = 4 mA(MIN)
■BALANCEDPROPAGATIONDELAYS:
tPLH ≅tPHL
■OPERATINGVOLTAGERANGE:
VCC (OPR)= 2Vto 3.6V(1.2VDataRetention)
■PINANDFUNCTIONCOMPATIBLEWITH
74SERIES14
■IMPROVEDLATCH-UP IMMUNITY
DESCRIPTION
The 74LVX14 is a low voltage CMOS HEX
SCHMITT INVERTERfabricated with sub-micron
silicon gate and double-layermetal wiring C2MOS
technology.It is ideal for low power and low noise
3.3Vapplications.
It has better speed performance at 3.3V than 5V
LSTTL family combined with the true CMOS low
powerconsumption.
Pin configuration and function are the same as
those of the LVX04 but the LVX14 has histeresys
betweenthe positive and negativeinput threshold
typicallyof 1V.
This together with its schmitt trigger function
allows it to be used on line receivers with slow
rise/fall input signals.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V. All inputs and outputs
are equippedwith protectioncircuits against static
discharge, giving them 2KV ESD immunity and
transientexcessvoltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES :
74LVX14M 74LVX14T
M
(Micro Package) T
(TSSOPPackage)
1/8
TRUTH TABLE
AY
LH
HL
PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 3, 5, 9,
11, 13 1A to 6A Data Inputs
2, 4, 6, 8,
10, 12 1Y to 6Y Data Outputs
7 GND Ground (0V)
14 VCC Positive Supply Voltage
INPUT EQUIVALENTCIRCUIT
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
VCC Supply Voltage (note 1) 2 to 3.6 V
VIInput Voltage 0 to 5.5 V
VOOutput Voltage 0 to VCC V
Top Operating Temperature: -40 to +85 oC
1)Truth Table guaranteed: 1.2V to 3.6V
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCC Supply Voltage -0.5 to +7.0 V
VIDC Input Voltage -0.5 to 7.0 V
VODC Output Voltage -0.5 to VCC + 0.5 V
IIK DC Input Diode Current - 20 mA
IOK DC Output Diode Current ±20 mA
IODC Output Current ±25 mA
ICC or IGND DC VCC or Ground Current ±50 mA
Tstg Storage Temperature -65 to +150 oC
TLLead Temperature (10 sec) 300 oC
AbsoluteMaximumRatingsarethosevaluesbeyond whichdamage tothedevicemay occur. Functional operationunderthese condition isnot implied.
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DC SPECIFICATIONS
Symbol Parameter Test Conditions Value Unit
VCC
(V) TA=25o
C -40 to 85 oC
Min. Typ. Max. Min. Max.
Vt+ High Level Input
Threshold 3.0 2.2 2.2 V
Vt- Low Level Input
Threshold 3.0 0.9 0.9 V
VHHysteresis Voltage 3.0 0.3 1.2 0.3 1.2 V
VOH High Level Output
Voltage 2.0 VI(*) =
VIL
IO=-50 µA 1.9 2.0 1.9 V
3.0 IO=-50 µA 2.9 3.0 2.9
3.0 IO=-4 mA 2.58 2.48
VOL Low Level Output
Voltage 2.0 VI(*) =
VIH
IO=50 µA 0.0 0.1 0.1 V
3.0 IO=50 µA 0.0 0.1 0.1
3.0 IO=4 mA 0.36 0.44
IIInput Leakage Current 3.6 VI= 5V or GND ±0.1 ±1µA
ICC Quiescent Supply
Current 3.6 VI=V
CC or GND 2 20 µA
(*)Alloutputs loaded.
DYNAMIC SWITCHING CHARACTERISTICS
Symbol Parameter Test Conditions Value Unit
VCC
(V) TA=25o
C -40 to 85 oC
Min. Typ. Max. Min. Max.
VOLP Dynamic Low Voltage
Quiet Output (note 1, 2) 3.3
CL=50pF
0.3 0.5
V
VOLV -0.5 -0.3
VIHD Dynamic High Voltage
Input (note 1, 3) 3.3 2
VILD Dynamic Low Voltage
Input (note 1, 3) 3.3 0.8
1)Worstcasepackage
2)Max number ofoutputs defined as (n).Datainputs aredriven 0Vto3.3V,(n-1)outputs switching andone outputatGND
3)max number ofdatainputs (n)switching.(n-1)switching0Vto3.3V. Inputsunder testswitching: 3.3Vtothreshold (VILD),0V tothreshold (VIHD
).f=1MHz
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AC ELECTRICAL CHARACTERISTICS (Inputtr=t
f=3 ns)
Symbol Parameter Test Condition Value Unit
VCC
(V) CL
(pF) TA=25o
C -40 to 85 oC
Min. Typ. Max. Min. Max.
tPLH
tPHL Propagation Delay Time 2.7 15 8.7 16.3 1.0 19.5
ns
2.7 50 11.2 19.8 1.0 23.0
3.3(*) 15 6.8 10.6 1.0 12.5
3.3(*) 50 9.3 14.1 1.0 16.0
tOSLH
tOSHL Output to Output Skew
Time (note 1, 2) 2.7 50 1.5 1.5 ns
3.3(*) 50 1.5 1.5
1) Skewis defined astheabsolute value ofthedifference between theactual propagation delay for any twooutputs of thesame device switching inthe
samedirection, eitherHIGHorLOW
2) Parameterguaranteed bydesign
(*) Voltagerangeis3.3V ±0.3V
CAPACITIVE CHARACTERISTICS
Symbol Parameter Test Conditions Value Unit
VCC
(V) TA=25o
C -40 to 85 oC
Min. Typ. Max. Min. Max.
CIN Input Capacitance 3.3 4 10 10 pF
CPD Power Dissipation
Capacitance (note 1) 3.3 21 pF
1)CPD isdefined as thevalue ofthe IC’sinternal equivalent capacitance whichiscalculated fromthe operatingcurrent consumption without load. (Referto
TestCircuit).Average operting current can beobtained bythefollowingequation. ICC(opr)=CPD •VCC •fIN +I
CC/4(perGate)
74LVX14
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TESTCIRCUIT
CL= 50 pF or equivalent (includes jigand probe capacitance)
RL=R1=500Ωorequivalent
RT=Z
OUT ofpulsegenerator (typically50Ω)
WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)
74LVX14
5/8
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.75 0.068
a1 0.1 0.2 0.003 0.007
a2 1.65 0.064
b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.019
c1 45 (typ.)
D 8.55 8.75 0.336 0.344
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 7.62 0.300
F 3.8 4.0 0.149 0.157
G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.019 0.050
M 0.68 0.026
S 8 (max.)
P013G
SO-14 MECHANICAL DATA
74LVX14
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.1 0.433
A1 0.05 0.10 0.15 0.002 0.004 0.006
A2 0.85 0.9 0.95 0.335 0.354 0.374
b 0.19 0.30 0.0075 0.0118
c 0.09 0.20 0.0035 0.0079
D 4.9 5 5.1 0.193 0.197 0.201
E 6.25 6.4 6.5 0.246 0.252 0.256
E1 4.3 4.4 4.48 0.169 0.173 0.176
e 0.65 BSC 0.0256 BSC
K0
o4
o8
o0
o4
o8
o
L 0.50 0.60 0.70 0.020 0.024 0.028
cE
b
A2
A
E1
D
1
PIN 1 IDENTIFICATION
A1 L
K
e
TSSOP14 MECHANICAL DATA
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