SSM6L12TU
2010-02-15
1
1.Source1
2.Gate1
3.Drain2
4.Source2
5.Gate2
6.Drain1
0.3-0.05
6
1.7±0.1
2.1±0.1
1.3±0.1
1
2
0.650.65
3
2.0±0.1
0.16-0.05
5
4
0.7±0.05
+0.1
+0.06
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type
SSM6L12TU
High-Speed Switching Applications
• Optimum for high-density mounting in small packages
• Low ON-resistance Q1: RDS(ON) = 180mΩ (max) (@VGS = 2.5 V)
Q2: RDS(ON) = 430mΩ (max) (@VGS = -2.5 V)
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDS 30 V
Gate-source voltage VGSS ± 12 V
DC ID 0.5
Drain current
Pulse IDP 1.5
A
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDS -20 V
Gate-source voltage VGSS ± 12 V
DC ID -0.5
Drain current
Pulse IDP -1.5
A
Absolute Maximum Ratings (Q1,Q2 Common)
(Ta = 25°C)
Characteristics Symbol Rating Unit
Power dissipation PD
(Note 1) 500 mW
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board. (total dissipation)
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 )
Marking Equivalent Circuit (top view)
Unit: mm
UF6
JEDEC ―
JEITA ―
TOSHIBA 2-2T1B
Weight: 7.0 mg (typ.)
Q1
Q2
654
123
6
K9
4
1 2 3
5
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SSM6L12TU
2010-02-15
2
Q1 Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±12 V, VDS = 0 ⎯ ⎯ ±1 μA
V (BR) DSS ID = 1 mA, VGS = 0 30 ⎯ ⎯
Drain-source breakdown voltage
V (BR) DSX ID = 1 mA, VGS = −12 V 18 ⎯ ⎯
V
Drain cut-off current IDSS V
DS = 30 V, VGS = 0 ⎯ ⎯ 1 μA
Gate threshold voltage Vth V
DS = 3 V, ID = 0.1 mA 0.5 ⎯ 1.1 V
Forward transfer admittance ⏐Yfs⏐ V
DS = 3 V, ID = 0.25 A (Note 2) 1.0 2.0 ⎯ S
ID = 0.50 A, VGS = 4.5 V (Note 2) ⎯ 120 145
Drain-source on-resistance RDS (ON)
ID = 0.25 A, VGS = 2.5 V (Note 2) ⎯ 140 180
mΩ
Input capacitance Ciss V
DS = 10 V, VGS = 0, f = 1 MHz ⎯ 245 ⎯ pF
Reverse transfer capacitance Crss V
DS = 10 V, VGS = 0, f = 1 MHz ⎯ 33 ⎯ pF
Output capacitance Coss V
DS = 10 V, VGS = 0, f = 1 MHz ⎯ 41 ⎯ pF
Turn-on time ton ⎯ 9 ⎯
Switching time
Turn-off time toff
VDD = 10 V, ID = 0.25 A,
VGS = 0 to 2.5 V, RG = 4.7 Ω ⎯ 15 ⎯
ns
Note 2: Pulse test
Switching Time Test Circuit
(a) Test Circuit (b) VIN
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID=100 μA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on))
Please take this into consideration when using the device.
(c) VOUT
VDD = 10 V
RG = 4.7 Ω
Duty ≤ 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
VDD
OUT
IN
2.5 V
0
10 μs
RG
tf
ton
90%
10%
2.5 V
0 V
90%
10%
toff
tr
VDD
VDS
(
ON
)
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SSM6L12TU
2010-02-15
3
Q2 Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ± 12V, VDS = 0 ⎯ ⎯ ±1 μA
V (BR) DSS ID = -1 mA, VGS = 0 -20 ⎯ ⎯
Drain-source breakdown voltage
V (BR) DSX ID = -1 mA, VGS = +12 V -8 ⎯ ⎯
V
Drain cut-off current IDSS V
DS = -20 V, VGS = 0 ⎯ ⎯ -1 μA
Gate threshold voltage Vth V
DS = -3 V, ID = -0.1 mA -0.5 ⎯ -1.1 V
Forward transfer admittance ⏐Yfs⏐ V
DS = -3 V, ID = -0.25 A (Note 3) 0.65 1.3 ⎯ S
ID = -0.25 A, VGS = -4 V (Note 3) ⎯ 210 260
Drain-source on-resistance RDS (ON)
ID = -0.25 A, VGS = -2.5 V (Note 3) ⎯ 310 430
mΩ
Input capacitance Ciss V
DS = -10 V, VGS = 0, f = 1 MHz ⎯ 218 ⎯ pF
Reverse transfer capacitance Crss V
DS = -10 V, VGS = 0, f = 1 MHz ⎯ 42 ⎯ pF
Output capacitance Coss V
DS = -10 V, VGS = 0, f = 1 MHz ⎯ 52 ⎯ pF
Turn-on time ton ⎯ 16 ⎯
Switching time
Turn-off time toff
VDD = -10 V, ID = -0.25 A,
VGS = 0 to -2.5 V, RG = 4.7 Ω ⎯ 15 ⎯
ns
Note3: Pulse test
Switching Time Test Circuit
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID=-100 μA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on))
Please take this into consideration when using the device.
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness
and pad area. When using this device, please take heat dissipation into consideration
VDD = -10 V
RG = 4.7 Ω
Duty ≤ 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
IN
0
−2.5V
10 μs VDD
OUT
RG
RL
(c) VOUT
ton
10%
90%
−2.5 V
0 V
90%
10%
toff
tr tf
VDS
(
ON
)
VDD
(b) VIN
(a) Test circuit
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2010-02-15
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Q1(Nch MOS FET)
RDS(ON) - ID
0
20
40
60
80
100
120
140
160
180
200
0 200 400 600 800 1000 1200 1400 1600
Drain current ID (mA)
Drain-Source on resistance
RDS(ON) (mΩ)
Common Source
Ta=25°C
VGS=4.5 V
2.5V
RDS(ON) - VGS
0
50
100
150
200
250
300
350
400
012345678910
Gate-Source voltage VGS (V)
Drain-Source on resistance
RDS(ON) (mΩ)
Common Source
ID=500mA
Ta=100°C
25°C
-25°C
ID - VDS
0
200
400
600
800
1000
1200
1400
1600
0 0.2 0.4 0.6 0.8 1
Drain-Source voltage VDS (V)
Drain current ID (mA
)
Common Source
Ta=25°C
VGS=1.4V
1.6
1.8
2.0
5.0
3.0
4.0
ID - VGS
0.01
0.1
1
10
100
1000
10000
0123
Gate-Source voltage VGS (V)
Drain current ID (mA)
Common Source
VDS=3 V
Ta=100°C
25°C
-25°C
RDS(ON) - Ta
0
50
100
150
200
250
300
350
400
-60 -40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
Drain-Source on resistance
RDS(ON) (mΩ)
Common Source
VGS=4.5V,ID=500mA
2.5V,250mA
Vth - Ta
0
0.2
0.4
0.6
0.8
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
Gate threshold voltage Vth(V)
Common Source
ID=0.1m A
VDS=3 V
ID - VDS
0
200
400
600
800
1000
1200
1400
1600
0 0.2 0.4 0.6 0.8 1
Drain-Source voltage VDS (V)
Drain current ID (mA)
Common Source
Ta=25°C
VGS=1.4V
1.6
1.8
2.0
5.0
3.0
4.0
ID - VDS
0
200
400
600
800
1000
1200
1400
1600
0 0.2 0.4 0.6 0.8 1
Drain-Source voltage VDS (V)
Drain current ID (mA)
Common Source
Ta=25°C
VGS=1.4V
1.6
1.8
2.0
5.0
3.0
4.0
Common Source
Ta=25℃
Pulse test
Common Source
VDS=3V
Pulse test
Common Source
Ta=25℃
Pulse test
Common Source
ID=500mA
Pulse test
Common Source
Pulse test
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SSM6L12TU
2010-02-15
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Q1(Nch MOS FET)
Common Source
VDS=3V
Pulse test
Common Source
VGS = 0 V
Pulse test
G
D
S
IDR
C - VDS
10
100
1000
0.1 1 10 100
Drain-Source voltage VDS (V)
Capacitance C (pF
)
Common Source
VGS=0V
f=1MHz
Ta=25°C
Ciss
Coss
Crss
IDR - VDS
0
200
400
600
800
1000
1200
1400
1600
-1-0.8-0.6-0.4-0.20Drain-Source voltage VDS (V)
Drain reverse current IDR (mA
)
Common Source
VGS=0 V
Ta=25°C
S
IDR
G
D
|Yfs| - ID
0
1
10
10 100 1000 10000
Drain current ID (mA)
Forward transfer admittance
|Yfs| (S)
Common Source
VDS=3 V
Ta=25°C
Ta=100°C
25°C
-25°C
t - ID
1
10
100
1000
10 100 1000 10000
Drain current ID (mA)
Switching time t (ns)
Common Source
VDD=10V
VGS=0 ~2.5V
Ta=25°C
toff
tr
ton
tf
Common Source
VDD=10V
VGS=0 to 2.5V
Ta=25℃
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SSM6L12TU
2010-02-15
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Q2(Pch MOS FET)
RDS(ON) - ID
0
100
200
300
400
500
-1600-1400-1200-1000-800-600-400-2000
Drain current ID (mA)
Drain-Source on resistance
RDS(ON) (mΩ)
Common Source
Ta=25°C
VGS =- 4 V
-2.5V
RDS(ON) - VGS
0
100
200
300
400
500
-10-9-8-7-6-5-4-3-2-10
Gate-Source voltage VGS (V)
Drain-Source on resistance
RDS(ON) (mΩ)
Common Source
ID=-250mA
Ta=100°C
25°C
-25°C
ID - VDS
-1600
-1400
-1200
-1000
-800
-600
-400
-200
0
-1-0.8-0.6-0.4-0.20
Drain-Source voltage VDS (V)
Drain current ID (mA
)
Common Source
Ta=25°C
VGS=-1.6
-1.8
-2.0
-5.0 -3.0
-4.0
ID - VGS
0.01
0.1
1
10
100
1000
10000
-3-2-10
Gate-Source voltage VGS (V)
Drain current ID (mA)
Common Source
VDS=-3 V
Ta=100°C
25°
-25°C
-
-
-
-
-
-
-
-
RDS(ON) - Ta
0
100
200
300
400
500
-60 -40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
Drain-Source on resistance
RDS(ON) (mΩ)
VGS=-4V
-2.5V
Common Source
ID=-250mA
Vth - Ta
-1
-0.8
-0.6
-0.4
-0.2
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
Gate threshold voltage Vth(V)
Common Source
ID=-0.1m A
VDS=-3 V
ID - VDS
-1600
-1400
-1200
-1000
-800
-600
-400
-200
0
-1-0.8-0.6-0.4-0.20
Drain-Source voltage VDS (V)
Drain current ID (mA)
Common Source
Ta=25°C
VGS=-1.6
-1.8
-2.0
-5.0 -3.0
-4.0
ID - VDS
-1600
-1400
-1200
-1000
-800
-600
-400
-200
0
-1-0.8-0.6-0.4-0.20
Drain-Source voltage VDS (V)
Drain current ID (mA)
Common Source
Ta=25°C
VGS=-1.6
-1.8
-2.0
-5.0 -3.0
-4.0
Common Source
VDS=-3V
Pulse test
Common Source
Ta=25℃, Pulse test
Common Source
Ta=25℃
Pulse test
Common Source
ID=-250mA
Pulse test
Common Source
ID=-250mA
Pulse test
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SSM6L12TU
2010-02-15
7
Q2(Pch MOS FET)
C - VDS
10
100
1000
-0 -1 -10 -100
Drain-Source voltage VDS (V)
Capacitance C (pF
)
Common Source
VGS=0V
f=1MHz
Ta=25°C
Ciss
Coss
Crss
IDR - VDS
0
200
400
600
800
1000
1200
1400
1600
0.0 0.2 0.4 0.6 0.8 1.0
Drain-Source voltage VDS (V)
Drain reverse current IDR (mA
)
Common Source
VGS=0 V
Ta=25°C
|Yfs| - ID
0
1
10
-10 -100 -1000 -10000
Drain current ID (mA)
Forward transfer admittance
|Yfs| (S)
Common Source
VDS=-3V
Ta=25°C
Ta=100°C
25°C
-25°C
t - ID
1
10
100
1000
-10 -100 -1000 -10000
Drain current ID (mA)
Switching time t (ns)
Common Source
VDD=-10V
VGS=0 ~-2.5V
Ta=25°C
toff
tr
ton
tf
Common Source
VGS = 0 V
Pulse test
G
D
S
IDR
Common Source
VDS=-3V
Ta=25℃
Pulse test
Common Source
VDD=-10V
VGS=0 to -2.5V
T
a=25℃
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SSM6L12TU
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PD* - Ta
0
200
400
600
800
1000
0 20 40 60 80 100 120 140 160
Ambient temperature Ta(℃)
Drain power dissipation PD* (mW)
mounted FR4 board
( 25. 4mm*25 .4 mm*1. 6t
Cu Pad :645mm
2
)
t=10s
DC
*:Total Rating
Pulse width tw (s)
rth – tw
Transient thermal impedance rth (°C/W )
0.001 1000 0.01 0.1 1 100
10
100
1000
1
10
Single pulse
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Mounted FR4 board
(25.4 mm × 25.4mm × 1.6 mm)
Cu Pad :645mm2
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SSM6L12TU
2010-02-15
9
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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