LM185-1.2QML www.ti.com SNVS384B - OCTOBER 2005 - REVISED JANUARY 2014 LM185-1.2QML Micropower Voltage Reference Diode Check for Samples: LM185-1.2QML FEATURES DESCRIPTION * * * * The LM185-1.2 is a micropower 2-terminal band-gap voltage regulator diodes. Operating over a 10A to 20mA current range, it features exceptionally low dynamic impedance and good temperature stability. On-chip trimming is used to provide tight voltage tolerance. Since the LM185-1.2 band-gap reference uses only transistors and resistors, low noise and good long term stability result. 1 2 Operating Current of 10A to 20mA 1 Maximum Dynamic Impedance (Typical) Low Temperature Coefficient Radiation Qualified Option - 100 krad - Low Dose Rate Tested at 10 mrad/s Careful design of the LM185-1.2 has made the device exceptionally tolerant of capacitive loading, making it easy to use in almost any reference application. The wide dynamic operating range allows its use with widely varying supplies with excellent regulation. The extremely low power drain of the LM185-1.2 makes it useful for micropower circuitry. This voltage reference can be used to make portable meters, regulators or general purpose analog circuitry with battery life approaching shelf life. Further, the wide operating current allows it to replace older references with a tighter tolerance part. Connection Diagrams Figure 1. LCCC Package See Package Number NAJ0020A Figure 2. TO Package - Bottom View See Package Number NDU0002A 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright (c) 2005-2014, Texas Instruments Incorporated LM185-1.2QML SNVS384B - OCTOBER 2005 - REVISED JANUARY 2014 www.ti.com 1 10 2 9 3 8 4 7 5 6 NC +VREF NC NC NC NC NC V- NC NC Figure 3. CLGA Package See Package Number NAC0010A Schematic Diagram These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 2 Submit Documentation Feedback Copyright (c) 2005-2014, Texas Instruments Incorporated Product Folder Links: LM185-1.2QML LM185-1.2QML www.ti.com SNVS384B - OCTOBER 2005 - REVISED JANUARY 2014 Absolute Maximum Ratings (1) Reverse Current 30mA Forward Current 10mA -55C TA +125C Operating Temperature Range Maximum Junction Temperature (TJmax) (2) +150C -55C TA +150C Storage Temperature Lead Temperature (Soldering 10 Seconds) CLGA 260C TO package 300C 20LD LCCC package JA Thermal Resistance JC Package Weight (Typical) 300C TO (Still Air) 300C/W TO (500LF / Min Air Flow) 139C/W 20LD LCCC (Still Air) 100C/W 20LD LCCC (500LF / Min Air Flow) 73C/W CLGA (Still Air) 194C/W CLGA (500LF / Min Air Flow) 128C/W TO 57C/W 20LD LCCC 25C/W CLGA 23C/W TO TBD 20LD LCCC TBD CLGA 210mg ESD Tolerance (3) (1) (2) (3) 4KV Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional. For specifications and test conditions, see the Electrical Characteristics. The specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), JA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (TJmax - TA)/JA or the number given in the Absolute Maximum Ratings, whichever is lower. Human body model, 1.5K in series with 100pF. Quality Conformance Inspection Table 1. Mil-Std-883, Method 5005 - Group A Subgroup Description 1 Static tests at Temp C 25 2 Static tests at 125 3 Static tests at -55 4 Dynamic tests at 25 5 Dynamic tests at 125 6 Dynamic tests at -55 7 Functional tests at 25 8A Functional tests at 125 8B Functional tests at -55 9 Switching tests at 25 10 Switching tests at 125 11 Switching tests at -55 12 Settling time at 25 13 Settling time at 125 14 Settling time at -55 Submit Documentation Feedback Copyright (c) 2005-2014, Texas Instruments Incorporated Product Folder Links: LM185-1.2QML 3 LM185-1.2QML SNVS384B - OCTOBER 2005 - REVISED JANUARY 2014 www.ti.com LM185-1.2 Electrical Characteristics DC Parameters Symbol VRef Parameter Reverse Breakdown Voltage Conditions Notes Max Units IR = 10A 1.223 1.247 V 1 IR = 20A 1.205 1.26 V 2, 3 IR = 1mA 1.223 1.247 V 1 1.205 1.26 V 2, 3 1.223 1.247 V 1 2, 3 IR = 20mA VRef / IR Reverse Breakdown Voltage Change with Current VF Forward Bias Voltage Subgroups Min 1.205 1.26 V 10A IR 1mA -1.0 1.0 mV 1 20A IR 1mA -1.5 1.5 mV 2, 3 1mA IR 20mA -10.0 10.0 mV 1 -20.0 20.0 mV 2, 3 -1.0 -0.4 V 1 IF = 2mA LM185-1.2 Electrical Characteristics DC Drift Parameters Delta calculations performed on QMLV devices at group B, subgroup 5, unless otherwise specified on the IPI. Symbol VR Parameter Reverse Breakdown Voltage Min Max Units Subgroups IR = 10A -0.01 0.01 V 1 IR = 20mA -0.01 0.01 V 1 Min Max Units Subgroups IR = 10A 1.223 1.247 V 1 IR = 20A 1.205 1.26 V 2, 3 IR = 1mA 1.223 1.247 V 1 1.205 1.26 V 2, 3 1.223 1.247 V 1 2, 3 Conditions Notes LM185BY-1.2 Electrical Characteristics DC Parameters Symbol VRef Parameter Reverse Breakdown Voltage Conditions Notes IR = 20mA VRef / IR Reverse Breakdown Voltage Change with Current VF Forward Bias Voltage TC Temperature Coefficient (1) 4 1.205 1.26 V 10A IR 1mA -1.0 1.0 mV 1 20A IR 1mA -1.5 1.5 mV 2, 3 1mA IR 20mA -10.0 10.0 mV 1 -20.0 20.0 mV 2, 3 -1.0 -0.4 V 1 50 PPM/C 2, 3 IF = 2mA (1) The average temperature coefficient is defined as the maximum deviation of reference voltage, at all measured temperatures between the operating TMin & TMax, divided by (TMax - TMin). The measured temperatures (TMeasured) are -55C, 25C, & 125C or VRef / (TMax - TMin) Submit Documentation Feedback Copyright (c) 2005-2014, Texas Instruments Incorporated Product Folder Links: LM185-1.2QML LM185-1.2QML www.ti.com SNVS384B - OCTOBER 2005 - REVISED JANUARY 2014 LM185-1.2RLQV SMD 5962R8759461 Post 100 krad Electrical Characteristics DC Parameters (1) (2) Symbol VRef Parameter Change in Reverse Breakdown Voltage Conditions Notes Min Max Units Subgroups IR = 10A (3) -3 3 % 1 IR = 1mA (3) -3 3 % 1 IR = 20mA (3) -2.5 2.5 % 1 VRef / IR Reverse Breakdown Voltage Change with Current 10A IR 1mA -15 15 mV 1 1mA IR 20mA -25 25 mV 1 VF IF = 2mA -1.0 -0.4 V 1 (1) (2) (3) Forward Bias Voltage Radiation hardness assured (RHA) products are those with an "RLQV" suffix in the Texas Instruments' part number or those with an "R" in the SMD number, following "5962". Testing and qualification for RHA products is done on a wafer level according to MIL-STD-883, Test Method 1019. Testing is performed with a 1.5X overtest. To be rated at 100 krad(Si) units are tested to 150 krad(Si) with all parameters remaining inside the post 100 krad Electrical DC test limits in this table. Interim test points are taken at 50, 75 and 100 krad(Si). Change from the 0 rad reading. Submit Documentation Feedback Copyright (c) 2005-2014, Texas Instruments Incorporated Product Folder Links: LM185-1.2QML 5 LM185-1.2QML SNVS384B - OCTOBER 2005 - REVISED JANUARY 2014 www.ti.com Typical Performance Characteristics 6 Reverse Characteristics Reverse Characteristics Figure 4. Figure 5. Forward Characteristics Temperature Drift of 3 Representative Units Figure 6. Figure 7. Reverse Dynamic Impedance Reverse Dynamic Impedance Figure 8. Figure 9. Submit Documentation Feedback Copyright (c) 2005-2014, Texas Instruments Incorporated Product Folder Links: LM185-1.2QML LM185-1.2QML www.ti.com SNVS384B - OCTOBER 2005 - REVISED JANUARY 2014 Typical Performance Characteristics (continued) Noise Voltage Filtered Output Noise Figure 10. Figure 11. Response Time 1.25 Reference Voltage (V) Low Dose Rate Biased 1.24 Low Dose Rate Unbiased 1.23 1.22 1.21 1.20 0 50 100 Radiation Level (krad) Figure 12. 150 C001 Figure 13. VRef Radiation Drift at IR = 10 A Reference Voltage (V) 1.25 1.24 1.23 1.22 Low Dose Rate Biased 1.21 Low Dose Rate Unbiased 1.20 0 50 100 Radiation Level (krad) 150 C002 Figure 14. VRef Radiation Drift at IR = 20 mA Submit Documentation Feedback Copyright (c) 2005-2014, Texas Instruments Incorporated Product Folder Links: LM185-1.2QML 7 LM185-1.2QML SNVS384B - OCTOBER 2005 - REVISED JANUARY 2014 www.ti.com Typical Applications Figure 15. Wide Input Range Reference Figure 16. Micropower Reference from 9V Battery Figure 17. Reference from 1.5V Battery *IQ 30A Figure 18. Micropower* 5V Regulator 8 Submit Documentation Feedback Copyright (c) 2005-2014, Texas Instruments Incorporated Product Folder Links: LM185-1.2QML LM185-1.2QML www.ti.com SNVS384B - OCTOBER 2005 - REVISED JANUARY 2014 *IQ 20A standby current Figure 19. Micropower* 10V Reference Figure 20. Precision 1A to 1mA Current Sources Submit Documentation Feedback Copyright (c) 2005-2014, Texas Instruments Incorporated Product Folder Links: LM185-1.2QML 9 LM185-1.2QML SNVS384B - OCTOBER 2005 - REVISED JANUARY 2014 www.ti.com METER THERMOMETERS Calibration 1. Short LM385-1.2, adjust R3 for IOUT= temp at 1A/K 2. Remove short, adjust R2 for correct reading in centigrade IQ at 1.3V500A IQ at 1.6V2.4mA Figure 21. 0C-100C Thermometer *2N3638 or 2N2907 select for inverse HFE 5 Select for operation at 1.3V IQ 600A to 900A Figure 22. Lower Power Thermometer Calibration 1. Short LM385-1.2, adjust R3 for IOUT= temp at 1.8A/K 2. Remove short, adjust R2 for correct reading in F Figure 23. 0F-50F Thermometer 10 Submit Documentation Feedback Copyright (c) 2005-2014, Texas Instruments Incorporated Product Folder Links: LM185-1.2QML LM185-1.2QML www.ti.com SNVS384B - OCTOBER 2005 - REVISED JANUARY 2014 Calibration 1. Adjust R1 so that V1 = temp at 1mV/K 2. Adjust V2 to 273.2mV IQ for 1.3V to 1.6V battery voltage = 50A to 150A Typical supply current 50A Figure 24. Centigrade Thermometer Adjustment Procedure 1. Adjust TC ADJ pot until voltage across R1 equals Kelvin temperature multiplied by the thermocouple Seebeck coefficient. 2. Adjust zero ADJ pot until voltage across R2 equals the thermocouple Seebeck coefficient multiplied by 273.2. Figure 25. Micropower Thermocouple Cold Junction Compensator Thermocouple Type Seebeck Coefficient (V/C) R1 () R2 () Voltage Across R1 @ 25C (mV) Voltage Across R2 (mV) J 52.3 523 1.24k 15.60 14.32 T 42.8 432 1k 12.77 11.78 K 40.8 412 953 12.17 11.17 S 6.4 63.4 150 1.908 1.766 Submit Documentation Feedback Copyright (c) 2005-2014, Texas Instruments Incorporated Product Folder Links: LM185-1.2QML 11 LM185-1.2QML SNVS384B - OCTOBER 2005 - REVISED JANUARY 2014 www.ti.com REVISION HISTORY SECTION Released 12 Revision Section 10/07/05 A New Release, Corporate format 03/27/13 A All 01/07/14 B Features, Electrical Characteristics, Typical Performance Characteristics Originator L. Lytle Changes 2 MDS data sheets converted into one Corp. data sheet format. MNLM185-1.2-X Rev 2A3 and MNLM185BY-1.2-X Rev 0B0 data sheets will be archived. Changed layout of National Data Sheet to TI format K. Kruckmeyer Added post irradiation test limits and typical radiation drift plots for radiation qualified option. Submit Documentation Feedback Copyright (c) 2005-2014, Texas Instruments Incorporated Product Folder Links: LM185-1.2QML PACKAGE OPTION ADDENDUM www.ti.com 28-Jul-2017 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (C) Device Marking (4/5) 5962-8759401XA ACTIVE TO NDU 2 20 TBD Call TI Call TI -55 to 125 8759401XA Q 5962-8759401YA ACTIVE CFP NAC 10 54 TBD Call TI Call TI -55 to 125 LM185WG -1.2/883 Q 5962-87594 01YA ACO 01YA >T 5962-8759405XA ACTIVE TO NDU 2 20 TBD Call TI Call TI -55 to 125 8759405XA Q 5962R8759461VXA ACTIVE TO NDU 2 20 TBD Call TI Call TI -55 to 125 R8759461VXA Q LM185BYH1.2-SMD ACTIVE TO NDU 2 20 TBD Call TI Call TI -55 to 125 8759405XA Q LM185H-1.2-SMD ACTIVE TO NDU 2 20 TBD Call TI Call TI -55 to 125 8759401XA Q LM185H-1.2/883 ACTIVE TO NDU 2 20 TBD Call TI Call TI -55 to 125 LM185-1.2 Q LM185H-1.2RLQV ACTIVE TO NDU 2 20 TBD Call TI Call TI -55 to 125 R8759461VXA Q LM185WG-1.2/883 ACTIVE CFP NAC 10 54 TBD Call TI Call TI -55 to 125 LM185WG -1.2/883 Q 5962-87594 01YA ACO 01YA >T LM185WG-1.2RLQV PREVIEW CFP NAC 10 54 TBD Call TI Call TI -55 to 125 LM185WG -1.2RLQV Q (5962-87594, 5962R 87594) (01VYA ACO, 61VYA ACO) 01VYA >T (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 28-Jul-2017 (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". 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