IXGR72N60C3D1 - Zilog - Datasheet.Global

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

VGE(th) IC = 250μA, VCE = VGE 3.0 5.5 V

ICES VCE = VCES, VGE = 0V 300 μA

TJ = 125°C 5 mA

IGES VCE = 0V, VGE = ±20V ±100 nA

VCE(sat) IC = 50A, VGE = 15V, Note 1 2.10 2.70 V

TJ = 125°C 1.65 V

Symbol Test Conditions Maximum Ratings

VCES TJ= 25°C to 150°C 600 V

VCGR TJ= 25°C to 150°C, RGE = 1MΩ 600 V

VGES Continuous ±20 V

VGEM Transient ±30 V

IC25 TC= 25°C (Limited by Leads) 75 A

IC110 TC= 110°C35A

IF110 TC= 110°C36A

ICM TC= 25°C, 1ms 400 A

IATC = 25°C50A

EAS TC= 25°C 500 mJ

SSOA VGE = 15V, TVJ = 125°C, RG = 2ΩICM = 150 A

(RBSOA) Clamped Inductive Load VCE ≤ VCES

PCTC= 25°C 200 W

TJ -55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

VISOL 50/60 Hz, RMS, t = 1Minute 2500 V~

IISOL < 1mA t = 20 Seconds 3000 V~

FCMounting Force 20..120/4.5..27 N/lb

TLMaximum Lead Temperature for Soldering 300 °C

TSOLD 1.6mm (0.062 in.) from Case for 10s 260 °C

Weight 5 g

DS100010A(11/09)

VCES = 600V

IC110 = 35A

VCE(sat) ≤≤

≤≤

≤£ 2.7V

tfi(typ) = 55ns

IXGR72N60C3D1

GenX3TM 600V IGBT

with Diode

High-Speed Low-Vsat PT IGBT

40-100 kHz Switching

Features

zSilicon Chip on Direct-Copper Bond

(DCB) Substrate

zOptimized for Low Switching Losses

zSquare RBSOA

zIsolated Mounting Surface

zAnti-Parallel Ultra Fast Diode

zAvalanche Rated

z2500V Electrical Isolation

Advantages

zHigh Power Density

zLow Gate Drive Requirement

Applications

zHigh Frequency Power Inverters

zUPS

zMotor Drives

zSMPS

zPFC Circuits

zBattery Chargers

zWelding Machines

zLamp Ballasts

ISOPLUS 247TM

G = Gate C = Collector

E = Emitter

GCEIsolated Tab

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGR72N60C3D1

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

gfs IC= 50A, VCE = 10V, Note 1 33 55 S

Cies 4780 pF

Coes VCE = 25V, VGE = 0V, f = 1MHz 330 pF

Cres 117 pF

Qg 175 nC

Qge IC= 50A, VGE = 15V, VCE = 0.5 • VCES 33 nC

Qgc 72 nC

td(on) 27 ns

tri 37 ns

Eon 1.03 mJ

td(off) 77 130 ns

tfi 55 110 ns

Eoff 0.48 0.95 mJ

td(on) 26 ns

tri 36 ns

Eon 1.48 mJ

td(off) 120 ns

tfi 124 ns

Eoff 0.93 mJ

RthJC 0.62 °C/W

RthCS 0.15 °C/W

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

ISOPLUS247 (IXGR) Outline

Notes:

1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

VF IF = 60A, VGE = 0V, Note 1 2.5 V

TJ = 150°C 1.4 V

IRM TJ = 100°C 8.3 A

trr 35 ns

RthJC 0.85 °C/W

IF = 60A, VGE = 0V,

-diF/dt = 100A/μs, VR = 100V

IF = 1A, -di/dt = 200A/μs, VR = 30V

Reverse Diode (FRED)

Inductive Load, TJ = 25°°

°°

°C

IC = 50A, VGE = 15V

VCE = 480V, RG = 2Ω, Note 2

Inductive Load, TJ =1 25°°

°°

°C

IC = 50A, VGE = 15V

VCE = 480V, RG = 2Ω, Note 2

IXGR72N60C3D1

Fi g . 1. Ou tp u t C h ar acter i sti cs @ T

J

= 25ºC

0

10

20

30

40

50

60

70

80

90

100

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

7V

5V

9V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

50

100

150

200

250

300

350

02468101214

V

CE

- Volts

I

C -

Amperes

V

GE

= 15V

13V

7V

9V

11V

5V

Fi g . 3. Ou tp u t C h ar acter i sti cs @ T

J

= 125ºC

0

10

20

30

40

50

60

70

80

90

100

0.0 0.4 0.8 1.2 1.6 2.0 2.4

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

7V

5V

9V

Fig. 4. Dependence of V

CE(sat)

on

JunctionTemperature

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 100A

I

C

= 50A

I

C

= 25A

Fi g . 5. C o l l ecto r -to -Emi tter Vo l tag e

vs. Gate-to -Emi tter Vo l tag e

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

6 7 8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

I

C

= 100A

50A

25A

T

J

= 25ºC

Fig. 6. Input Adm ittance

0

10

20

30

40

50

60

70

80

90

100

4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0

V

GE

- Volts

I

C -

Amperes

T

J

= 125ºC

25ºC

- 40ºC

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGR72N60C3D1

Fig. 11. Maximum T ransient Thermal Impedance

0.01

0.10

1.00

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

Fig. 7. Transconductance

0

10

20

30

40

50

60

70

80

90

0 102030405060708090100

IC - Amperes

g

f s

-

Siemens

TJ

= - 40ºC

25ºC

125ºC

Fi g . 10. R ever se-B i as Safe Oper ati n g Area

0

20

40

60

80

100

120

140

160

100 200 300 400 500 600

VCE - Volts

IC - Amperes

TJ

= 125ºC , RG = 2

dv / dt < 10V / ns

Fig. 8. Gate Charge

0

2

4

6

8

10

12

14

16

0 20 40 60 80 100 120 140 160 180

QG - NanoCoulombs

VGE - Volts

VCE

= 300V

I C = 50A

I G = 10mA

Fig. 9. Capacitance

10

100

1,000

10,000

0 5 10 15 20 25 30 35 40

VCE - Volts

Capacitance - PicoFarads

f

= 1 MHz

Cies

Coes

Cres

IXGR72N60C3D1

Fig. 12. Inductive Switching

Energ y L o s s vs. Gate R esi st an ce

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

2 3 4 5 6 7 8 9 10 11 12 13 14 15

RG - Ohms

Eoff - MilliJoules

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

E

on

- MilliJoules

E

off

E

on

- - - -

TJ = 125ºC , VGE = 15V

VCE = 480V

I C = 100A

I C = 50A

Fig. 17. Inductive Turn-off

Switching Times vs. Junction T emperature

40

60

80

100

120

140

160

25 35 45 55 65 75 85 95 105 115 125

TJ - Degrees Centigrade

t

f -

Nanoseconds

65

75

85

95

105

115

125

t

d(off)

-

Nanoseconds

t

f

t

d(off)

- - - -

RG = 2

, VGE = 15V

VCE = 480V

I

C

= 100A

I

C

= 50A

Fig. 15. Inductive T urn-off

Switch in g Ti mes vs. Gat e R esistan ce

90

100

110

120

130

140

150

160

170

180

190

23456789101112131415

RG - Ohms

t

f

- Nanoseconds

0

50

100

150

200

250

300

350

400

450

500

t

d

(

off

)

- Nanoseconds

t f

td(off)

- - - -

TJ = 125ºC, VGE = 15V

VCE = 480V

I C = 100A

I C = 50A

Fig. 13. Inductive Switching

Energ y L o ss vs. Co l lecto r C u rrent

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

20 30 40 50 60 70 80 90 100

IC - Amperes

Eoff - MilliJoules

0.0

0.8

1.6

2.4

3.2

4.0

4.8

5.6

E

on

- MilliJoules

E

off

E

on

- - - -

RG = 2

 ,

VGE = 15V

VCE = 480V

TJ = 125ºC, 25ºC

Fig. 14. Inductive Switching

Energy Loss vs. Junction T emperature

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

25 35 45 55 65 75 85 95 105 115 125

TJ - Degrees Centigrade

Eoff - MilliJoules

0.0

0.8

1.6

2.4

3.2

4.0

4.8

5.6

E

on

- MilliJoules

E

off

E

on

- - - -

RG = 2

,

VGE = 15V

VCE = 480V

I C = 100A

I C = 50A

Fig. 16. Inductive T urn-off

Switch in g Ti mes vs. Co l l ect o r C u rrent

20

40

60

80

100

120

140

160

180

20 30 40 50 60 70 80 90 100

IC - Amperes

t

f

- Nanoseconds

70

80

90

100

110

120

130

140

150

t

d

(

off

)

- Nanoseconds

t

f

t

d(off)

- - - -

RG = 2

, VGE = 15V

VCE = 480V

TJ = 125ºC

TJ

= 25ºC

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGR72N60C3D1

IXYS REF: G_72N60C3(8D)11-25-09-C

Fig. 19. Inductive Turn-on

Switch i ng Time s vs. C o llect o r Cu r r ent

10

20

30

40

50

60

70

80

90

100

110

20 30 40 50 60 70 80 90 100

I

C

- Amperes

t

r

-

Nanoseconds

18

20

22

24

26

28

30

32

34

36

38

t

d

(

on

)

-

Nanoseconds

t

r

t

d(on)

- - - -

R

G

= 2

, V

GE

= 15V

V

CE

= 480V

T

J

= 25ºC, 125ºC

Fig. 20. Inductive Turn-on

Switch i n g Times vs. Ju n cti o n Temper atu r e

20

30

40

50

60

70

80

90

100

110

120

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r

-

Nanoseconds

25

26

27

28

29

30

31

32

33

34

35

t

d(on)

-

Nanoseconds

t

r

t

d(on)

- - - -

R

G

= 2

, V

GE

= 15V

V

CE

= 480V

I

C

= 50A

I

C

= 100A

Fig. 18. Inductive Turn-on

Switch i ng Times vs. Gate Resistan ce

20

40

60

80

100

120

140

160

23456789101112131415

R

G

- Ohms

t

r

- Nanoseconds

25

30

35

40

45

50

55

60

t

d

(

on

)

- Nanoseconds

t

r

t

d(on)

- - - -

T

J

= 125ºC, V

GE

= 15V

V

CE

= 480V

I

C

= 50A

I

C

= 100A

IXGR72N60C3D1

IXYS REF: G_72N60C3(8D)11-25-09-C

200 600 10000 400 800

80

90

100

110

120

130

140

0.00001 0.0001 0.001 0.01 0.1 1

0.0001

0.001

0.01

0.1

1

0 40 80 120 160

0.0

0.5

1.0

1.5

2.0

Kf

TVJ

°C

-diF/dt

t

s

K/W

0 200 400 600 800 1000

0

5

10

15

20

0.0

0.4

0.8

1.2

1.6

VFR

diF/dt

V

200 600 10000 400 800

0

20

40

60

80

100 1000

0

1000

2000

3000

4000

012

0

20

40

60

80

100

120

140

160

IRM

Qr

IF

A

VF-diF/dt -diF/dt

A/μs

A

V

nC

A/μsA/μs

trr

ns

tfr

A/μs

μs

DSEP 2x61-06A

ZthJC

TVJ= 100°C

VR = 300V

TVJ= 100°C

VR = 300V

TVJ= 150°C

100°C

25°C

IF= 120A, 60A, 30A

IRM

QRM

IF= 30A, 60A, 120A

TVJ= 100°C

VR = 300V

trr

VFR

IF= 120A, 60A, 30A

TVJ= 100°C

IF = 60A

Fig. 21. Forward Current IF Versus VFFig. 23. Peak ReverseCurrent IRM

Versus -diF/dt

Fig. 22. Reverse Recorvery Charge Qr

Versus -diF/dt

Fig. 26. Peak Forward Voltage VRM

and trr Versus -diF/dt

Fig. 25. Recorvery Time trr Versus

-diF/dt

Fig. 24. Dynamic paraments Qr, IRM

Versus TvJ

Fig. 27. Maximum Transient Thermal Impeadance Juection to Case (for Diode)

Fig. 27. Maximum Transient Thermal Impedance (for diode)

0.001

0.010

0.100

1.000

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

ºC / W