VS-ETL1506-M3, VS-ETL1506FP-M3
www.vishay.com Vishay Semiconductors
Revision: 08-Jul-15 1Document Number: 93531
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Ultrafast Rectifier, 15 A FRED Pt®
FEATURES
• State of the art low forward voltage drop
• Ultrafast soft recovery time
• 175 °C operating junction temperature
• Low leakage current
• Fully isolated package (VINS = 2500 VRMS)
• True 2 pin package
• Designed and qualified according to
JEDEC®-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
State of the art, ultralow VF, soft-switching ultrafast
rectifiers optimized for Discontinuous (Critical) Mode (DCM)
Power Factor Correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimized the switching losses
and reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
APPLICATIONS
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units and DVD AC/DC power supplies.
PRODUCT SUMMARY
Package 2L TO-220AC, 2L TO-220FP
IF(AV) 15 A
VR600 V
VF at IF0.85 V
trr (typ.) 60 ns
TJ max. 175 °C
Diode variation Single die
2L TO-220AC 2L TO-220 FULL-PAK
Base
cathode
2
3
Anode
1
Cathode
2
Anode
1
Cathode
VS-ETL1506-M3VS-ETL1506FP-M3
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage VRRM 600 V
Average rectified forward current in DC IF(AV)
TC = 157 °C 15 AFULL-PAK TC = 120 °C
Non-repetitive peak surge current IFSM TJ = 25 °C 200
Operating junction and storage temperatures TJ, TStg -65 to +175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA 600 - -
V
Forward voltage VF
IF = 15 A - 0.99 1.07
IF = 15 A, TJ = 150 °C - 0.85 0.91
Reverse leakage current IR
VR = VR rated - 0.01 15 μA
TJ = 150 °C, VR = VR rated - 6 100
Junction capacitance CTVR = 600 V - 12 - pF
Series inductance LSMeasured lead to lead 5 mm from package body - 8 - nH
VS-ETL1506-M3, VS-ETL1506FP-M3
www.vishay.com Vishay Semiconductors
Revision: 08-Jul-15 2Document Number: 93531
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time trr
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 60 110
ns
IF = 15 A, dIF/dt = 100 A/μs, VR = 30 V - 185 270
TJ = 25 °C
IF = 15 A
dIF/dt = 200 A/μs
VR = 390 V
- 210 -
TJ = 125 °C - 290 -
Peak recovery current IRRM
TJ = 25 °C - 20 - A
TJ = 125 °C - 26 -
Reverse recovery charge Qrr
TJ = 25 °C - 2.2 - μC
TJ = 125 °C - 4.0 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range TJ, TStg -65 - 175 °C
Thermal resistance,
junction to case RthJC -1.21.4
°C/W
FULL-PAK - 3.7 4.3
Thermal resistance,
junction to ambient RthJA Typical socket mount - - 70
Typical thermal resistance,
case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.5 -
Weight -2-g
-0.07- oz.
Mounting torque 6
(5) -12
(10)
kgf · cm
(lbf · in)
Marking device Case style 2L TO-220AC ETL1506
Case style 2L TO-220 FULL-PAK ETL1506FP
VS-ETL1506-M3, VS-ETL1506FP-M3
www.vishay.com Vishay Semiconductors
Revision: 08-Jul-15 3Document Number: 93531
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Forward Voltage Drop - VF (V)
Instantaneous Forward Current - IF (A)
0.4 0.6 0.8 1.0 1.2 1.4 1.6
1
10
100
Tj = 25°C
Tj = 150°C
Tj = 175°C
100 200 300 400 500 600
0.0001
0.001
0.01
0.1
1
10
100
150°C
175°C
25°C
50°C
75°C
125°C
100°C
Reverse Current - IR (µA)
Reverse Voltage - VR (V)
Reverse Voltage - VR (V)
Junction Capacitance - CT (pF)
0100 200 300 400 500 600
1
10
100
1000
t1, Rectangular Pulse Duration (Seconds)
Thermal Impedance ZthJC (°C/W)
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00
0.01
0.1
1
10
Single Pulse
(Thermal Resistance)
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
D = 0.01
VS-ETL1506-M3, VS-ETL1506FP-M3
www.vishay.com Vishay Semiconductors
Revision: 08-Jul-15 4Document Number: 93531
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK)
Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
Fig. 8 - Forward Power Loss Characteristics
t1, Rectangular Pulse Duration (Seconds)
Thermal Impedance ZthJC (°C/W)
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02
0.1
1
10
Single Pulse
(Thermal Resistance)
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
D = 0.01
Average Forward Current - IF(AV)(A)
Allowable Case Temperature (°C)
0 2 4 6 8 10 12 14 16
140
150
160
170
180
DC
Average Forward Current - I
F
(AV)(A)
Allowable Case Temperature (°C)
0 2 4 6 8 10 12 14 16
60
80
100
120
140
160
180
DC
Average Forward Current - I
F(AV)
(A)
Average Power Loss ( Watts )
0 4 8 12 16 20 24
0
5
10
15
20
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
RMS Limit
VS-ETL1506-M3, VS-ETL1506FP-M3
www.vishay.com Vishay Semiconductors
Revision: 08-Jul-15 5Document Number: 93531
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Typical Reverse Recovery vs. dIF/dt Fig. 10 - Typical Stored Charge vs. dIF/dt
Fig. 11 - Reverse Recovery Parameter Test Circuit
Fig. 12 - Reverse Recovery Waveform and Definitions
trr ( ns )
di F/dt (A/µs )
100 1000
100
150
200
250
300
350
400
If = 15 A, 125°C
If = 15 A, 25°C
typical value
Qrr ( µC )
di F/dt (A/µs )
100 1000
0
1
2
3
4
5
6
If = 15 A, 125°C
If = 15 A, 25°C
typical value
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dIF/dt
adjust
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve dened by trr
and IRRM
trr x IRRM
2
Qrr =
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
VS-ETL1506-M3, VS-ETL1506FP-M3
www.vishay.com Vishay Semiconductors
Revision: 08-Jul-15 6Document Number: 93531
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-ETL1506-M3 50 1000 Antistatic plastic tube
VS-ETL1506FP-M3 50 1000 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions 2L TO-220AC www.vishay.com/doc?95259
2L TO-220 FULL-PAK www.vishay.com/doc?95260
Part marking information 2L TO-220AC www.vishay.com/doc?95391
2L TO-220 FULL-PAK www.vishay.com/doc?95392
3- T = TO-220
4- L = hyperfast recovery time
5- Current code: 15 = 15 A
6- Voltage code: 06 = 600 V
7-
FP = FULL-PAK
None = TO-220
E = single diode
2- Circuit configuration:
1- Vishay Semiconductors product
- Environmental digit:
-M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free
8
Device code
51 32 4 6 7 8
VS- E T L 15 06 FP -M3
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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