DSA20C100PN preliminary Schottky Diode Gen VRRM = 100 V I FAV = 2x VF = 10 A 0.71 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA20C100PN Backside: isolated 1 2 3 Features / Advantages: Applications: Package: TO-220FP Very low Vf Extremely low switching losses Low Irm values Improved thermal behaviour High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Rectifiers in switch mode power supplies (SMPS) Free wheeling diode in low voltage converters Isolation Voltage: 2500 V~ Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Soldering pins for PCB mounting Base plate: Plastic overmolded tab Reduced weight IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131031a DSA20C100PN preliminary Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 100 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 100 V IR reverse current, drain current VR = 100 V TVJ = 25C 200 A VR = 100 V TVJ = 125C 2 mA TVJ = 25C 0.89 V 1.04 V 0.71 V VF IF = forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. 10 A IF = 20 A IF = 10 A IF = 20 A TVJ = 125 C TC = 140C rectangular 0.87 V T VJ = 175 C 10 A TVJ = 175 C 0.45 V d = 0.5 for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C CJ junction capacitance VR = TVJ = 25C IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved typ. 16.1 m 4.5 K/W K/W 0.50 TC = 25C 12 V f = 1 MHz Data according to IEC 60747and per semiconductor unless otherwise specified 35 240 96 W A pF 20131031a DSA20C100PN preliminary Package Ratings TO-220FP Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 C -55 150 C 150 C Weight 2 MD mounting torque FC mounting force with clip d Spp/App d Spb/Apb VISOL terminal to terminal 1.6 terminal to backside 2.5 creepage distance on surface | striking distance through air t = 1 second isolation voltage t = 1 minute Product Marking Part Number Logo DateCode Assembly Code 50/60 Hz, RMS; IISOL 1 mA g 0.4 0.6 Nm 20 60 N 1.0 mm 2.5 mm 2500 V 2080 V Part number D S A 20 C 100 PN abcdef = = = = = = = Diode Schottky Diode low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-220ABFP (3) YYWW Z XXXXXX Assembly Line Ordering Standard Part Number DSA20C100PN Similar Part DSA20C100PB Equivalent Circuits for Simulation I V0 R0 Marking on Product DSA20C100PN Package TO-220AB (3) * on die level Delivery Mode Tube Code No. 503516 Voltage class 100 T VJ = 175 C Schottky V 0 max threshold voltage 0.45 V R 0 max slope resistance * 12.9 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20131031a DSA20C100PN preliminary Outlines TO-220FP E A OP A1 Q H Dim. D 1 2 3 L1 A2 L b1 c b e 1 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 2 A A1 A2 b c D E e H L L1 OP Q Millimeters min max 4.50 4.90 2.34 2.74 2.56 2.96 0.70 0.90 0.45 0.60 15.67 16.07 9.96 10.36 2.54 BSC 6.48 6.88 12.68 13.28 3.03 3.43 3.08 3.28 3.20 3.40 Inches min max 0.177 0.193 0.092 0.108 0.101 0.117 0.028 0.035 0.018 0.024 0.617 0.633 0.392 0.408 0.100 BSC 0.255 0.271 0.499 0.523 0.119 0.135 0.121 0.129 0.126 0.134 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20131031a