Advanced Power MOSFET IRF830A FEATURES -?--f-f Oo Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10uA (Max.) @ Vps = 500V Lower Ropgion): 1.1692 (Typ.) Absolute Maximum Ratings Rogion) = 1.50 I = 45A TO-220 Ta 1.Gate 2. Drain 3. Source Symbol Characteristic Value Units Voss Drain-to-Source Voltage 500 Vv lo Continuous Drain Current (T.=25C) 4.5 A Continuous Drain Current (T.=100C) 2.9 lom Drain Current-Pulsed (1) 18 A Ves Gate-to-Source Voltage +30 Vv Eas Single Pulsed Avalanche Energy (2) 338 mJ lar Avalanche Current (1) 4.5 A Ear Repetitive Avalanche Energy (1) 7.3 mJ dv/dt Peak Diode Recovery dv/dt (3) 3.5 V/ns Total Power Dissipation (T.=25C) 73 W Po Linear Derating Factor 0.58 w/c Operating Junction and Ty , Tste - 55 to +150 Storage Temperature Range Maximum Lead Temp. for Soldering C TL Purposes, 1/8. from case for 5-seconds 300 Thermal Resistance Symbol Characteristic Typ. Max. Units Rose Junction-to-Case - 1.71 Recs Case-to-Sink 0.5 -- C/W Resa Junction-to-Ambient - 62.5 re Rev. B FAIRCHILD SEMICONDUCTOR 1999 Fairchild Semiconductor CorporationIRF830A N-CHANNEL POWER MOSFET Electrical Characteristics (T,=25C unless otherwise specified) Symbol Characteristic Min. | Typ. | Max. Units Test Condition BVpss_| Drain-Source Breakdown Voltage | 500| -- -- Vs] Vesg=0V,Ip=250nA ABV/AT, | Breakdown Voltage Temp. Coeff. | -- |0.61] -- | V/C|lp=250uA See Fig 7 Vash) | Gate Threshold Voltage 2.0] - | 4.0] V_ | Vps=5V,lp=250nA Gate-Source Leakage , Forward - | -- | 100 nA Vgg=30V oss Gate-Source Leakage, Reverse -- -- |-100 Vegs=-30V . -- -- 10 Vps=500V loss Drain-to-Source Leakage Current _ . | 400 pA Vps=400V,T.=125C Static Drain-Source R -- -- 1.5 Vv =10V,I =2.25A (4) Psion) | On-State Resistance o os Ots Forward Transconductance - [3.87] -- 5 Vps=50V, Ip=2.25A (4) Ciss Input Capacitance -- | 690] 900 . Vas=0V,Vps=25V, Ff =1 MHz Coss | Output Capacitance - | 85 | 100] pF : ; See Fig 5 Cres Reverse Transfer Capacitance - | 38 ] 45 tan) | Turn-On Delay Time - | 15 | 40 , , Vpp=250V,Ip=4.5A, t, Rise Time - | 16 | 40 , ns | Rg=12Q tary | Turn-Off Delay Time -- | 66 | 140 ; ; See Fig 13 (4) (5) t Fall Time -- | 22 | 55 Q, Total Gate Charge - | 33 | 43 Vps=400V,Veg=10V, Qgs Gate-Source Charge - 144] - | nC | [p=4.5A Qga Gate-Drain (. Miller. ) Charge - [16.6] -- See Fig 6 & Fig 12 (4) (5) Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. | Typ. | Max.| Units Test Condition Ig Continuous Source Current - - | 45 A Integral reverse pn-diode lou Pulsed-Source Current (1) | -- - | 18 in the MOSFET Vep Diode Forward Voltage (4) | -- - [1.4 | V_ | T)=25C,15=4.5A,Ves=0V tre Reverse Recovery Time -- | 285] -- ns | Ty=25C,|-=4.5A Q Reverse Recovery Charge -- | 2.0 | -- | pC | di-/dt=100A/us (4) Notes; 1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2) L=30mH, |,g=4.5A, V_p=50V, Rg=27Q, Starting T,=25C 4) Pulse Test: Pulse Width = 250us, Duty Cycle < 2% ( ( (3) lop. <4.5A, di/dt < 130A/us, Vpp < BVpgg Starting T, =25C ( ( 5) Essentially Independent of Operating Temperature ee FAIRCHILD SEMICONDUCTORN-CHANNEL POWER MOSFET IRF830A Fig 1. Output Characteristics 10 Vos Top : 15V 10V 80V 7OV 6OV 55V SOV || : Bottom : 45V uo wr . se I, , Drain Gurrent [A] 4 Bho eect ce : T @Nte : T =3C oO 1 1 1 1 1 1 0 4 8 2 4 , Drain Grrent [A] Fig 5. Capacitance vs. Drain-Source Voltage 1000 Ges Get Ga (Go= shorbad ) Pha eeteeeee _=C+C Peo | GG, ga Fig 2. Transfer Characteristics _ BC. @Nebes : 1. Yg =0V 2. Y= DV 3, 20 ys Pilse Bet 1 l 1 L 1 2 4 6 8 10 Ves 1 Gabe-Scuroe Voltage [VJ Fig 4. Source-Drain Diode Forward Voltage @ Notes : 1. Y%,=0V 2. AOys Pile Bet i 1 i 1 i 1 0.6 08 1.0 12 Vep 1 Scurce-Drain Voltage [V] Fig 6. Gate Charge vs. Gate-Source Voltage Job cope 5 | 3 | o | a Nets 1 =45A % 10 2 0 ee FAIRCHILD SEMICONDUCTORIRF830A N-CHANNEL POWER MOSFET 1.2 Fig 7. Breakdown Voltage vs. Temperature Ree + 3.0 Fig 8. On-Resistance vs. Temperature 15 Fig 9. Max. Safe Operating Area Ww - - - _ tite se) - . | ze B70 < =m 4b- a L s 10 [ oe wan *s. 1 0us eG : : yf - ss se Wrst. : : = ee ee i a Ne wea ! i 3}- : wo mY | | i DO 4 2}- a : e 197 @ Nebes : # L| =a 4L. - : 2, T, =190C : : 3, Single Rilse : : 192 jiu 1 po i yuu Oo 1 1 1 1 w 0 Ww 0 2 50 B 10 1B V,, , Drain-Saume Voltage [V] T, , Case Terperahre [CC] Fig 11. Thermal Response , 0 ar ene o ED=0 . 5' nn m F ga : : da r : [en @ Notes : : vs q ee 1. Ze (t)=1.71 C/W Mase. 4 bo 2. Duty Factor, D=t, /t, a 3. Thy To Pow tZi go (t) Bot 0.05 : vu Uc PM eve . Fo. 02 a Pou CLF. ~ rO.01 2 im : single pulse a j- v : : : t a! na? > : 10? ; . 4 10-> 10-4 10-3 10? 1012 10 101 t, , Square Wave Pulse Duration [sec] Se SS FAIRGHILD Ce SEMICONDUCTORPOWER MOSFET IRF830A Fig 12. Gate Charge Test Circuit & Waveform . Current Regulator. 12V T 7 1OV = Vos Vos ct DUT L 3mA t R, R, oO 0 W- W- Charge urrent Sampling (Ig) | Current Sampling (Ip) Resistor Resistor Fig 13. Resistive Switching Test Circuit & Waveforms out Vin : a 10V seh siete ton loge Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L BVpss L Eas= 7 Ly las SO Vos > LHP - BVpgs -- Vpp Vary t, to obtain os Ip BVpss | - - - - required peak I, ro Ing | - - - - ) Cc = Vop Ip (t) DUT Vop Vos (t) 10V j~<_ +, | Time ee FAIRCHILD SEMICONDUCTORIRF830A N-CHANNEL POWER MOSFET Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT _~| C+ A Vos L <-> 2 Ts of L OH. Driver Vas $ T R 7K) Same Type tL G Y as DUT = Vop Ves dv/dt controlled by . Rg. I, controlled by Duty Factor . D. O Vv Gate Pulse Width i GS D BS were . . . Gate Pulse Period 10V ( Driver ) | Igy Body Diode Forward Current Ts (DUT ) di/de to | XO Body Diode Reverse Current Vos (DUT ) Body Diode Recovery dv/dt \ Ve . tT Body Diode Forward Voltage Drop ee FAIRCHILD SEMICONDUCTORTRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ISOPLANAR CoolFET MICROWIRE CROSSVOLT POP E?CMOS PowerTrench FACT qs FACT Quiet Series Quiet Series FAST SuperSOT-3 FASTr SuperSOT-6 GTo SuperSOT-8 HiSeC TinyLogic DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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