© 2009 IXYS All rights reserved 1 - 7
20090804b
MIXA10WB1200TED
IXYS reserves the right to change limits, test conditions and dimensions.
Converter - Brake - Inverter
Module
XPT IGBT
Three Phase
Rectifier
Brake
Chopper
Three Phase
Inverter
VRRM = 1600 V VCES = 1200 V VCES = 1200 V
IDAVM = 105 A IC25 = 17 A IC25 = 17 A
IFSM = 320 A VCE(sat) = 1.8 V VCE(sat) = 1.8 V
Pin configuration see outlines.
Features:
• Easy paralleling due to the positive
temperature coefficient of the on-state
voltage
• Rugged XPT design
(Xtreme light Punch Through) results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
• Thin wafer technology combined with
the XPT design results in a competitive
low VCE(sat)
• SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Application:
• AC motor drives
• Solar inverter
• Medical equipment
• Uninterruptible power supply
• Air-conditioning systems
• Welding equipment
• Switched-mode and
resonant-mode power supplies
Package:
• "E2-Pack" standard outline
• Insulated copper base plate
• Soldering pins for PCB mounting
• Temperature sense included
Part name (Marking on product)
MIXA10WB1200TED
E 72873
21 22
1
D12
2
D13 D7
T7
D1 D3 D5
D2 D4 D6
T1 T3 T5
T2 T4 T6
D15D11
D14 D16
3
23 24
14
716
15
11
10
18
17
12
6
20
19
13
54
NTC
8
9
Preliminary data
© 2009 IXYS All rights reserved 2 - 7
20090804b
MIXA10WB1200TED
IXYS reserves the right to change limits, test conditions and dimensions.
Ouput Inverter T1 - T6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VCES collector emitter voltage TVJ = 25°C 1200 V
VGES
VGEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
V
IC25
IC80
collector current TC = 25°C
TC = 80°C
17
12
A
A
Ptot total power dissipation TC = 25°C 60 W
VCE(sat) collector emitter saturation voltage IC = 9 A; VGE = 15 V TVJ = 25°C
TVJ = 125°C
1.8
2.1
2.1 V
V
VGE(th) gate emitter threshold voltage IC = 0.3 mA; VGE = VCE TVJ = 25°C 5.5 6.0 6.5 V
ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C
TVJ = 125°C
0.01
0.1
0.7 mA
mA
IGES gate emitter leakage current VGE = ±20 V 500 nA
QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 10 A 27 nC
td(on)
tr
td(off)
tf
Eon
Eoff
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load TVJ = 125°C
VCE = 600 V; IC = 10 A
VGE = ±15 V; RG = 100 W
70
40
250
100
1.1
1.1
ns
ns
ns
ns
mJ
mJ
RBSOA reverse bias safe operating area
V
GE
= ±15 V; R
G
= 100 W;
TVJ = 125°C
VCEK = 1200 V 30 A
SCSOA
tSC
ISC
short circuit safe operating area
short circuit duration
short circuit current
VCE = 900 V; VGE = ±15 V; TVJ = 125°C
RG = 100 W; non-repetitive 40
10 µs
A
RthJC thermal resistance junction to case (per IGBT) 2.0 K/W
Output Inverter D1 - D6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VRRM max. repetitve reverse voltage TVJ = 25°C 1200 V
IF25
IF80
forward current TC = 25°C
TC = 80°C
19
13
A
A
VFforward voltage IF = 10 A; VGE = 0 V TVJ = 25°C
TVJ = 125°C
1.95
1.85
2.2 V
V
Qrr
IRM
trr
Erec
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
VR = 600 V
diF /dt = - A/µs TVJ = 125°C
IF = 10 A; VGE = 0 V
tbd
tbd
tbd
tbd
µC
A
ns
mJ
RthJC thermal resistance junction to case (per diode) 2.4 K/W
TC = 25°C unless otherwise stated
© 2009 IXYS All rights reserved 3 - 7
20090804b
MIXA10WB1200TED
IXYS reserves the right to change limits, test conditions and dimensions.
Brake T7
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VCES collector emitter voltage TVJ = 25°C 1200 V
VGES
VGEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
V
IC25
IC80
collector current TC = 25°C
TC = 80°C
17
12
A
A
Ptot total power dissipation TC = 25°C 60 W
VCE(sat) collector emitter saturation voltage IC = 9 A; VGE = 15 V TVJ = 25°C
TVJ = 125°C
1.8
2.1
2.1 V
V
VGE(th) gate emitter threshold voltage IC = 0.3 mA; VGE = VCE TVJ = 25°C 5.5 6.0 6.5 V
ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C
TVJ = 125°C 0.1
0.1 mA
mA
IGES gate emitter leakage current VGE = ±20 V 500 nA
QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 10 A 27 nC
td(on)
tr
td(off)
tf
Eon
Eoff
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load TVJ = 125°C
VCE = 600 V; IC = 10 A
VGE = ±15 V; RG = 100 W
70
40
250
100
1.1
1.1
ns
ns
ns
ns
mJ
mJ
RBSOA reverse bias safe operating area
V
GE
= ±15 V; R
G
= 100 W;
TVJ = 125°C
VCEK = 1200 V 30 A
SCSOA
tSC
ISC
short circuit safe operating area
short circuit duration
short circuit current
VCE = 900 V; VGE = ±15 V; TVJ = 125°C
RG = 100 W; non-repetitive 40
10 µs
A
RthJC thermal resistance junction to case (per IGBT) 2.0 K/W
Brake Chopper D7
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V
IF25
IF80
forward current TC = 25°C
TC = 80°C
12
8
A
A
VFforward voltage IF = 5 A; VGE = 0 V TVJ = 25°C
TVJ = 125°C
1.95
1.85
2.2 V
V
IRreverse current VR = VRRM TVJ = 25°C
TVJ = 125°C 0.5
0.5 mA
mA
Qrr
IRM
trr
Erec
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
VR = 600 V
diF /dt = tbd A/µs TVJ = 125°C
IF = 10 A; VGE = 0 V
tbd
tbd
tbd
tbd
µC
A
ns
µJ
RthJC thermal resistance junction to case (per diode) 3.4 K/W
TC = 25°C unless otherwise stated
© 2009 IXYS All rights reserved 4 - 7
20090804b
MIXA10WB1200TED
IXYS reserves the right to change limits, test conditions and dimensions.
Input Rectifier Bridge D11 - D16
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VRRM max. repetitive reverse voltage TVJ = 25°C 1600 V
IFAV
IDAVM
average forward current
max. average DC output current
sine 180° TC = 80°C
rect.; d = 1/3 TC = 80°C
37
105
A
A
IFSM max. forward surge current t = 10 ms; sine 50 Hz TVJ = 25°C
TVJ = 125°C
320
280
A
A
I2tI2t value for fusing t = 10 ms; sine 50 Hz TVJ = 25°C
TVJ = 125°C
510
390
A2s
A2s
Ptot total power dissipation TC = 25°C 110 W
VFforward voltage IF = 50 A TVJ = 25°C
TVJ = 125°C
1.34
1.34
1.7 V
V
IRreverse current VR = VRRM TVJ = 25°C
TVJ = 125°C 0.2
0.02 mA
mA
RthJC thermal resistance junction to case (per diode) 1.1 K/W
Temperature Sensor NTC
Ratings
Symbol Definitions Conditions min. typ. max. Unit
R25
B25/50
resistance TC = 25°C 4.75 5.0
3375
5.25 kW
K
Module
Ratings
Symbol Definitions Conditions min. typ. max. Unit
TVJ
TVJM
Tstg
operating temperature
max. virtual junction temperature
storage temperature
-40
-40
125
150
125
°C
°C
°C
VISOL isolation voltage IISOL < 1 mA; 50/60 Hz 2500 V~
CTI comparative tracking index -
Mdmounting torque (M5) 3 6 Nm
dS
dA
creep distance on surface
strike distance through air
6
6
mm
mm
Rpin-chip resistance pin to chip 5 mW
RthCH thermal resistance case to heatsink with heatsink compound 0.02 K/W
Weight 180 g
Equivalent Circuits for Simulation
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V0
R0
rectifier diode D8 - D13 TVJ = 150°C 0.88
9
V
mW
V0
R0
IGBT T1 - T6 TVJ = 150°C 1.1
153
V
mW
V0
R0
free wheeling diode D1 - D6 TVJ = 150°C 1.1
90
V
mW
V0
R0
IGBT T7 TVJ = 150°C 1.1
153
V
mW
V0
R0
free wheeling diode D7 TVJ = 150°C 1.15
170
V
mW
I
V
0
R
0
TC = 25°C unless otherwise stated
© 2009 IXYS All rights reserved 5 - 7
20090804b
MIXA10WB1200TED
IXYS reserves the right to change limits, test conditions and dimensions.
XXXXXXXXXX yywwx
Logo UL Part name Date Code
2D Data Matrix:
FOSS-ID 6 digits
Batch # 6 digits
Location
Part number
M = Module
I = IGBT
A = MPT
X = Parallel Legs
10 = Current Rating [A]
WB = 6-Pack + 3~ Rectifier Bridge & Brake Unit
1200 = Reverse Voltage [V]
T = NTC
ED = E2-Pack
Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code
Standard MIXA10WB1200 TED MIXA10WB1200TED Box 6 508061
Circuit Diagram
Outline Drawing Dimensions in mm (1 mm = 0.0394“)
21 22
1
D12
2
D13 D7
T7
D1 D3 D5
D2 D4 D6
T1 T3 T5
T2 T4 T6
D15D11
D14 D16
3
23 24
14
716
15
11
10
18
17
12
6
20
19
13
54
NTC
8
9
Product Marking
© 2009 IXYS All rights reserved 6 - 7
20090804b
MIXA10WB1200TED
IXYS reserves the right to change limits, test conditions and dimensions.
0 1 2 3
0
4
8
12
16
20
0 4 8 12 16 20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 1 2 3 4
0
4
8
12
16
20
V
CE
[V]
I
C
[A]
9 V
11 V
5 6 7 8 9 10 11 12 13
0
4
8
12
16
20
0 10 20 30
0
5
10
15
20
V
GE
[V]
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
13 V
80 120 160 200 240
0.0
0.4
0.8
1.2
1.6
2.0
E
[mJ]
E
on
Fig. 1 Typ. output characteristics
V
CE
[V]
I
C
[A]
V
GE = 15 V
17 V
19 V
Fig. 2 Typ. output characteristics
I
C
[A]
Fig. 3 Typ. tranfer characteristics
V
GE
[V]
Fig. 4 Typ. turn-on gate charge
Fig. 5 Typ. switching energy vs. collector current
E
off
Fig. 6 Typ. switching energy vs. gate resistance
Q
G
[nC]
R
G
[Ω]
E
[mJ]
I
C
[A]
E
on
E
off
I
C
= 10 A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
R
G
= 100 W
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
I
C
= 10 A
V
CE
= 600 V
V
GE = 15 V
T
VJ
= 125°C
T
VJ
= 125°C
© 2009 IXYS All rights reserved 7 - 7
20090804b
MIXA10WB1200TED
IXYS reserves the right to change limits, test conditions and dimensions.
0.001 0.01 0.1 1 10
0.1
1
10
tp[s]
ZthJC
[K/W]
Diode
IGBT
200 250 300 350 400 450 500
0.0
0.4
0.8
1.2
1.6
2.0
2.4
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
5
10
15
20
Qrr
[µC]
IF
[A]
VF[V] diF/dt [A/µs]
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
VR= 600 V
5 A
10 A
20 A
egrahcyrevoceresreverlacipyT8.giFscitsiretcarahcdrawrof.pyT7.giF
Qrr versus. diF/dt (125°C)
200 250 300 350 400 450 500
0
4
8
12
16
20
24
IRR
[A]
diF/dt [A/µs]
TVJ = 125°C
VR= 600 V
5 A
10 A
20 A
Fig. 9 Typical peak reverse current
IRR versus diF/dt (125°C)
200 250 300 350 400 450 500
0
100
200
300
400
500
trr
[ns]
diF/dt [A/µs]
5 A
10 A
20 A
TVJ = 125°C
VR= 600 V
Fig. 10 Typ. recovery time trr vs. di/dt (125°C)
Fig. 11 Typ. recovery energy Erec vs. diF/dt (125°C)
200 250 300 350 400 450 500
0.1
0.2
0.3
0.4
0.5
0.6
Erec
[mJ]
diF/dt [A/µs]
TVJ = 125°C
VR= 600 V
5 A
10 A
20 A
IGBT FRD
RitiRiti
1 0.446 0.0015 0.8 0.002
2 0.415 0.03 0.58 0.03
3 0.672 0.03 0.98 0.03
4 0.467 0.08 0.04 0.08
Fig. 8 Transient thermal impedance
