2SJ181(L), 2SJ181(S) Silicon P Channel MOS FET REJ03G0848-0200 (Previous: ADE-208-1183) Rev.2.00 Sep 07, 2005 Description High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A (Package name: DPAK (L)-(1) ) RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 4 D 1 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 7 2 3 1. Gate 2. Drain 3. Source 4. Drain G S 2SJ181(L), 2SJ181(S) Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Symbol VDSS Value -600 Unit V VGSS ID 15 -0.5 V A -1.0 -0.5 A A 20 150 W C -55 to +150 C ID (pulse) IDR Note 1 Note 2 Channel dissipation Channel temperature Pch Tch Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C Tstg Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Symbol V (BR) DSS Min -600 Typ -- Max -- Unit V Test Conditions ID = -10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current V (BR) GSS IGSS 15 -- -- -- -- 10 V A IG = 100 A, VDS = 0 VGS = 12 V, VDS = 0 IDSS -- -- -100 -4.0 A V VDS = -500 V, VGS = 0 ID = -1 mA, VDS = -10 V Zero gate voltage drain current Gate to source cutoff voltage VGS (off) -- -2.0 Static drain to source on state resistance Forward transfer admittance RDS (on) |yfs| -- 0.3 15 0.45 25 -- S ID = -0.3 A, VGS = -10 V Note 3 ID = -0.3 A, VDS = -20 V Input capacitance Output capacitance Ciss Coss -- -- 220 55 -- -- pF pF Reverse transfer capacitance Turn-on delay time Crss td (on) -- -- 13 7 -- -- pF ns VDS = -10 V VGS = 0 f = 1 MHz tr 20 35 -- -- ns ns Rise time Turn-off delay time td (off) -- -- Fall time Body to drain diode forward voltage tf VDF -- -- 35 -0.85 -- -- ns V trr -- 230 -- ns Body to drain diode reverse recovery time Note: 3. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 7 Note 3 ID = -0.3 A VGS = -10 V RL = 100 IF = -0.5 A, VGS = 0 IF = -0.5 A, VGS = 0 diF/dt = 50 A/s 2SJ181(L), 2SJ181(S) Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating -10 ID (A) 30 Drain Current Channel Dissipation Pch (W) 40 20 10 0 0 50 100 150 Case Temperature -3 10 s -1 10 PW 1m DC -0.1 -0.03 Tc (C) s =1 s 0m Op s( era 1s tio Operation in h n( Tc ot) this area is =2 5C limited by RDS (on) ) -0.3 Ta = 25C -0.01 -10 -20 -50 -100 -200 200 0 Drain to Source Voltage Typical Output Characteristics -500 -1000 VDS (V) Typical Transfer Characteristics -0.5 -1.0 -6 V -10 V -0.8 ID (A) ID (A) Pulse Test -0.3 -0.6 -5 V Drain Current Drain Current -0.4 -0.4 -4.5 V -0.2 Tc = -25C -0.2 75C 25C -0.1 VDS = -20 V Pulse Test VGS = -4 V 0 0 -10 -20 -30 0 -50 Drain to Source Saturation Voltage vs. Gate to Source Voltage -20 Pulse Test -16 -12 ID = -0.5 A -8 -0.2 A -4 -0.1 A 0 0 -4 -8 -12 Gate to Source Voltage Rev.2.00 Sep 07, 2005 page 3 of 7 -16 -20 VGS (V) 0 -2 -4 -6 -8 Gate to Source Voltage VDS (V) -10 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) () Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Voltage -40 500 Pulse Test 200 100 50 VGS = -10 V 20 10 -15 V 5 -0.02 -0.05 -0.1 -0.2 Drain Current -0.5 ID (A) -1 -2 2SJ181(L), 2SJ181(S) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) () Static Drain to Source on State Resistance vs. Temperature 40 Pulse Test VGS = -10 V 32 ID = -0.5 A 24 -0.2 A -0.1 A 16 8 0 -40 0 40 80 Case Temperature 120 160 2 Tc = -25C 1 25C 0.5 75C 0.2 0.1 0.05 VDS = -20 V Pulse Test 0.02 -0.05 -0.1 -0.2 Tc (C) 500 300 Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 200 100 50 -1 Reverse Drain Current -2 100 Coss 30 10 Crss 1 -5 IDR (A) VDD = -100 V -250 V -400 V VDS -600 -8 -12 VGS -16 -800 ID = -0.5 A -1000 0 4 8 Gate Charge Rev.2.00 Sep 07, 2005 page 4 of 7 12 16 Qg (nc) -10 -20 -30 -40 -50 -20 20 VGS (V) 500 VGS = -10 V, VDD = -30 V PW = 5 s, duty 1 % Switching Time t (ns) -400 -4 Gate to Source Voltage VDS (V) Drain to Source Voltage -200 0 Switching Characteristics 0 VDD = -100 V -250 V -400 V VGS = 0 f = 1 MHz Drain to Source Voltage VDS (V) Dynamic Input Characteristics -0 -5 Ciss 3 di / dt = 100 A / s VGS = 0, Ta = 25C -0.5 -2 Typical Capacitance vs. Drain to Source Voltage 1000 10 -0.05 -0.1 -0.2 -1 Drain Current ID (A) Body-Drain Diode Reverse Recovery Time 20 -0.5 200 100 50 20 10 tf td(off) tr td(on) 5 -0.05 -0.1 -0.2 -0.5 Drain Current -1 -2 ID (A) -5 2SJ181(L), 2SJ181(S) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) -1.0 Pulse Test -0.8 -0.6 -0.4 VGS = -10 V -0.2 0, 5 V 0 -0.6 -0.8 Source to Drain Voltage VSD 0 -0.2 -0.4 -1.0 (V) Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.1 ch - c (t) = s (t) * ch - c ch - c = 6.25C/W, Tc = 25C 0.05 0.02 0.03 1 0.0 1s t ho D= PDM pu lse 0.01 10 PW T PW T 100 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveform Vin Vout Monitor Vin Monitor 10% D.U.T. 90% RL 90% 90% Vin -10 V 50 VDD = -30 V Vout td(on) Rev.2.00 Sep 07, 2005 page 5 of 7 10% tr 10% td(off) tf 2SJ181(L), 2SJ181(S) Package Dimensions RENESAS Code Package Name MASS[Typ.] PRSS0004ZD-A DPAK(L)-(1) / DPAK(L)-(1)V 0.42g 1.7 0.5 JEITA Package Code 2.3 0.2 0.55 0.1 5.5 0.5 6.5 0.5 5.4 0.5 Unit: mm 3.1 0.5 1.15 0.1 0.8 0.1 2.29 0.5 16.2 0.5 1.2 0.3 2.29 0.5 RENESAS Code Package Name MASS[Typ.] SC-63 PRSS0004ZD-C DPAK(S) / DPAK(S)V 0.28g 6.5 0.5 5.4 0.5 (0.1) Unit: mm 2.3 0.2 0.55 0.1 0 - 0.25 2.5 0.5 (1.2) 1.0 Max. 2.29 0.5 Rev.2.00 Sep 07, 2005 page 6 of 7 (5.1) (5.1) (0.1) 1.2 Max 5.5 0.5 1.5 0.5 JEITA Package Code 0.55 0.1 0.8 0.1 2.29 0.5 0.55 0.1 2SJ181(L), 2SJ181(S) Ordering Information Part Name 2SJ181L-E 2SJ181STL-E Quantity 3200 pcs 3000 pcs Shipping Container Box (Sack) Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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