© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 15 1Publication Order Number:
BDX53B/D
BDX53B, BDX53C (NPN),
BDX54B, BDX54C (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors
These devices are designed for general−purpose amplifier and
low−speed switching applications.
Features
•High DC Current Gain −
hFE = 2500 (Typ) @ IC = 4.0 Adc
•Collector Emitter Sustaining Voltage − @ 100 mAdc
VCEO(sus) = 80 Vdc (Min) − BDX53B, 54B
VCEO(sus) = 100 Vdc (Min) − BDX53C, 54C
•Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
•Monolithic Construction with Built−In Base−Emitter Shunt Resistors
•These Devices are Pb−Free and are RoHS Compliant*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎ
ÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Value
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Voltage
BDX53B, BDX54B
BDX53C, BDX54C
ÎÎÎ
ÎÎÎ
ÎÎÎ
VCEO
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
80
100
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Base VoltageBDX53B, BDX54B
BDX53C, BDX54C
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
VCB
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
80
100
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter−Base Voltage
ÎÎÎ
VEB
ÎÎÎÎ
5.0
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current − Continuous
− Peak
ÎÎÎ
ÎÎÎ
ÎÎÎ
IC
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
8.0
12
ÎÎÎ
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current
ÎÎÎ
ÎÎÎ
IB
ÎÎÎÎ
ÎÎÎÎ
0.2
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Total Device Dissipation @ TC = 25°C
Derate above 25°C
ÎÎÎ
ÎÎÎ
PD
ÎÎÎÎ
ÎÎÎÎ
65
0.48
ÎÎÎ
ÎÎÎ
W
W/°C
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎ
ÎÎÎ
ÎÎÎ
TJ, Tstg
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−65 to +150
ÎÎÎ
ÎÎÎ
ÎÎÎ
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎ
ÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction−to−Ambient
ÎÎÎ
RqJA
ÎÎÎÎ
70
ÎÎÎ
°C/W
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction−to−Case
ÎÎÎ
ÎÎÎ
RqJC
ÎÎÎÎ
ÎÎÎÎ
1.92
ÎÎÎ
ÎÎÎ
°C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
DARLINGTON
8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 VOLTS, 65 WATTS
TO−220
CASE 221A
STYLE 1
123
4
MARKING DIAGRAM
& PIN ASSIGNMENT
1
Base 3
Emitter
4
Collector
2
Collector
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BDX5xy = Device Code
x = 3 or 4
y = B or C
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
BDX5xyG
AY WW
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
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2
80
40
20
020 40 80 100 120 160
Figure 1. Power Derating
T, TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
60
TATC
4.0
2.0
1.0
3.0
0 60 140
TA
TC
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 100 mAdc, IB = 0) BDX53B, BDX54B
BDX53C, BDX54C
VCEO(sus) 80
100 −
−
Vdc
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0) BDX53B, BDX54B
(VCE = 50 Vdc, IB = 0) BDX53C, BDX54C
ICEO −
−0.5
0.5
mAdc
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0) BDX53B, BDX54B
(VCB = 100 Vdc, IE = 0) BDX53C, BDX54C
ICBO −
−0.2
0.2
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 3.0 Adc, VCE = 3.0 Vdc) hFE 750 − −
Collector−Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 12 mAdc) VCE(sat) −
−2.0
4.0 Vdc
Base−Emitter Saturation Voltage
(IC = 3.0 Adc, IC = 12 mA) VBE(sat) − 2.5 Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) hfe 4.0 − −
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) BDX53B, 53C
BDX54B, 54C
Cob −
−300
200
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
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3
Figure 2. Switching Time Test Circuit
5.0
0.1
Figure 3. Switching Times
IC, COLLECTOR CURRENT (AMP)
t, TIME (s)μ
3.0
0.7
0.5
0.3
0.2
0.05 0.2 0.3 0.7 3.0 10
td @ VBE(off) = 0 V
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
tf
0.07
1.0 5.0
ts
tr
0.1
1.0
2.0
0.5 2.0 7.0
0
VCC
- 30 V
SCOPE
TUT
+ 4.0 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
RC
D1 MUST BE FAST RECOVERY TYPES, e.g.:
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
25 ms
D1
51
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
V2
APPROX
+ 8.0 V
V1
APPROX
-12 V
[ 8.0 k [ 120
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse all polarities
RB
Figure 4. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02
r(t) EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500
RqJC(t) = r(t) RqJC
RqJC = 1.92°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
SINGLE
PULSE
0.03 0.3 3.0 30 300
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
1.0
Figure 5. Active−Region Safe Operating Area
20
2.0
0.05
10 20 100
TJ = 150°C
0.2
5.0
0.5
IC
, COLLECTOR CURRENT (AMP)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
30 70
1.0
0.1
dc
2.0 503.0 5.0 7.0
5.0 ms
1.0 ms
100 ms
BDX53B, BDX54B
BDX53C, BDX54C
CURVES APPLY BELOW RATED VCEO
0.02
500 ms
There are two limitations on the power handling ability o f
a transistor average junction temperature and second
breakdown. Safe operating area curves indicate IC −VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
TJ(pk) t 150°C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
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4
10,000
1.0
Figure 6. Small-Signal Current Gain
f, FREQUENCY (kHz)
10 2.0 5.0 10 20 50 100 200 1000
500
300
100
5000
hFE, SMALL-SIGNAL CURRENT GAIN
20
3000
200
500
2000
1000
30
50
TJ = 25°C
VCE = 3.0 V
IC = 3.0 A
300
0.1
Figure 7. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
30 1.0 2.0 5.0 20 10010
C, CAPACITANCE (pF)
200
100
70
50
TJ = + 25°C
Cib
Cob
500.2 0.5
PNP
NPN
PNP
NPN
0.1
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
0.2 0.3 0.5 0.7 1.0 2.0 10
500
300
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
-55°C
VCE = 4.0 V
200 7.0
NPN
BDX53B, 53C
PNP
BDX54B, 54C
20,000
5000
10,000
3000
2000
1000
3.0 5.0 0.1
IC, COLLECTOR CURRENT (AMP)
0.2 0.3 0.5 0.7 1.0 2.0 10
500
300
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
-55°C
200 7.0
20,000
5000
10,000
3000
2000
1000
3.0 5.0
VCE = 4.0 V
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 9. Collector Saturation Region
3.0
IB, BASE CURRENT (mA)
0.3 0.5 1.0 2.0 3.0 5.0 7.0 30
2.6
2.2
1.8
1.4
IC = 2.0 A
TJ = 25°C
4.0 A 6.0 A
1.0 0.7 2010
3.0
IB, BASE CURRENT (mA)
0.3 0.5 1.0 2.0 3.0 5.0 7.0 30
2.6
2.2
1.8
1.4
IC = 2.0 A
TJ = 25°C
4.0 A 6.0 A
1.0 0.7 2010
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
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IC, COLLECTOR CURRENT (AMP)
VBE(sat) @ IC/IB = 250
V, VOLTAGE (VOLTS)
Figure 10. “On” Voltages
IC, COLLECTOR CURRENT (AMP)
V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
TJ = 25°C
VBE @ VCE = 4.0 V
VBE @ VCE = 4.0 V
VCE(sat) @ IC/IB = 250
TJ = 25°C
0.1 0.2 0.3 0.5 0.7 1.0 2.0 107.03.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 107.03.0 5.0
3.0
2.5
2.0
1.5
1.0
0.5
3.0
2.5
2.0
1.5
1.0
0.5
V, TEMPERATURE COEFFICIENT (mV/ C)°θ
V, TEMPERATURE COEFFICIENT (mV/ C)°θ
+5.0
Figure 11. Temperature Coefficients
IC, COLLECTOR CURRENT (AMP)
0.1 0.2 0.3 1.0 2.0 3.0 5.0 7.0 10
-55 to 150°C
+4.0
+3.0
+1.0
0
-4.0
-1.0
-2.0
-3.0
-5.0
qVB for VBE
*qVC for VCE(sat)
-55°C to 25°C
25°C to 150°C
25°C to 150°C
*IC/IB v hFE/3
0.5 0.7
+2.0
NPN
BDX53B, BDX53C
PNP
BDX54B, BDX54C
+5.0
IC, COLLECTOR CURRENT (AMP)
0.1 0.2 0.3 1.0 2.0 3.0 5.0 7.0 10
-55 to 150°C
+4.0
+3.0
+1.0
0
-4.0
-1.0
-2.0
-3.0
-5.0
qVB for VBE
*qVC for VCE(sat)
-55°C to 25°C
25°C to 150°C
25°C to 150°C
*IC/IB v hFE/3
0.5 0.7
+2.0
Figure 12. Collector Cut−Off Region
105
VBE, BASE‐EMITTER VOLTAGE (VOLTS)
102
101
100
, COLLECTOR CURRENT (A)μIC
10-1
+0.2 +0.40-0.2-0.4-0.6
VCE = 30 V
REVERSE FORWARD
103
104
+0.6 +0.8 +1.0 +1.2 + 1.4
TJ = 150°C
100°C
25°C
105
VBE, BASE‐EMITTER VOLTAGE (VOLTS)
102
101
100
, COLLECTOR CURRENT (A)μIC
10-1
-0.2 -0.40+0.2+0.4+0.6
VCE = 30 V
TJ = 150°C
100°C
25°C
REVERSE FORWARD
103
104
-0.6 -0.8 -1.0 -1.2 -1.4
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
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6
Figure 13. Darlington Schematic
NPN
BDX53B
BDX53C
PNP
BDX54B
BDX54C
BASE
COLLECTOR
EMITTER
[ 8.0 k [ 120
BASE
COLLECTOR
EMITTER
[ 8.0 k [ 120
ORDERING INFORMATION
Device Package Shipping†
BDX53BG TO−220
(Pb−Free) 50 Units / Rail
BDX53CG TO−220
(Pb−Free) 50 Units / Rail
BDX54BG TO−220
(Pb−Free) 50 Units / Rail
BDX54CG TO−220
(Pb−Free) 50 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
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7
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.415 9.66 10.53
C0.160 0.190 4.07 4.83
D0.025 0.038 0.64 0.96
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.024 0.36 0.61
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
P
UBLICATION ORDERING INFORMATION
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Europe, Middle East and Africa Technical Support:
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Phone: 81−3−5817−1050
BDX53B/D
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