IGBT 300 A 1200 V CIRCUIT OUTLINE DRAWING Dimensionmm Maximum RatingsTC25 Item Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Symbol Rated Value Unit VCES 1200 V VGES 20 V DC IC 300 1ms ICP 600 PC 1800 W Tj -40150 Tstg -40125 Viso 2500 V RMS Collector Power Dissipation Junction Temperature Range Storage Temperature Range -AC Isolation VoltageTerminal to Base, ACmin. Module Base to Heatsink Mounting Torque Busbar to Terminal PHMB300BS12 A 330.6 Ftor M4 1.414.3 M6 330.6 Nm kgfcm Electrical CharacteristicsTC25 Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-On Time Switching Time Fall Time Turn-Off Time Symbol Test Conditions Min. Typ. Max. Unit ICES VCE1200V, VGE0V 3.00 mA IGES VGE20V, VCE0V 1.00 A sat VCE IC300A, VGE15V 2.30 2.70 V th VGE VCE5V, IC300mA 4.0 8.00 V VCE10V, VGE0V, f1MHz 18900 pF 0.25 0.45 0.40 0.70 0.25 0.35 0.80 1.10 Cies tr ton tf VCC600V RL2.0 RG5.1 VGE15V toff 401 http://store.iiic.cc/ s Symbol Rated Value DC IF 300 1ms IFM 600 Item Forward Current Free Wheeling Diode Ratings & CharacteristicsTC25 Symbol Characteristic Peak Forward Voltage Reverse Recovery Time Unit A Test Conditions Min. Typ. Max. Unit VF IF300A, VGE0V 2.2 2.6 V trr IF300A, VGE-10V di/dt600A/s 0.2 0.3 s Min. Typ. Max. 0.069 Unit 0.143 Thermal Characteristics Characteristic Test Conditions Symbol IGBT j-c Rth Thermal Impedance Diode Tc Junction to Case /W Fig. 1 Output CharacteristicsTypical Fig. 2 Output CharacteristicsTypical T C=25C 600 12V VGE=20V 10V 400 300 9V 200 12V 11V 15V 500 Collector Current I C (A) Collector Current I C (A) VGE=20V 15V 500 T C=125C 600 11V 10V 400 300 9V 200 8V 8V 100 100 7V 7V 0 0 1 2 3 4 0 5 0 1 Collector to Emitter Voltage VCE (V) Fig. 3 Collector to Emitter on Voltage vs. Gate to Emitter VoltageTypical Collector to Emitter Voltage V CE (V) Collector to Emitter Voltage V CE (V) 14 300A 12 10 8 6 4 2 0 4 8 12 16 IC=150A 300A 10 8 6 4 2 20 0 4 8 16 300000 14 100000 600 12 500 10 8 VCE =600V 6 400V 4 200V 100 0 0 500 1000 1500 2000 Gate to Emitter Voltage VGE (V) Collector to Emitter Voltage V CE (V) RL =2.0( TC=25C 200 16 20 Fig. 6 Capacitance vs. Collector to Emitter VoltageTypical VGE=0V f=1MHZ T C=25C 30000 Capacitance C (pF) 800 300 12 Gate to Emitter Voltage VGE (V) Fig. 5 Gate Charge vs. Collector to Emitter VoltageTypical 400 600A 12 Gate to Emitter Voltage VGE (V) 700 5 T C=125C 14 0 0 4 16 600A IC=150A 3 Fig. 4 Collector to Emitter on Voltage vs. Gate to Emitter VoltageTypical T C=25C 16 2 Collector to Emitter Voltage VCE (V) 10000 Coes 3000 1000 Cres 300 2 100 0 2500 30 Total Gate Charge Qg (nC) Cies 0.1 0.2 0.5 1 2 5 10 20 Collector to Emitter Voltage VCE (V) 402 http://store.iiic.cc/ 50 100 200 Fig. 7 Collector Current Fig. 7 vs. Switching TimeTypical Fig. 8 Series Gate Impedance Fig. 8 vs. Switching TimeTypical 2 5 VGE=15V T C=25C Resistive Load tOFF Switching Time t (s) tf 3 Switching Time t (s) 1.2 1 toff tON 0.4 VCC=600V RG=5.1( VGE=15V T C=125C Inductive Load 3 IC=300A tOFF 0.8 10 VCC=600V VCC=600V RG=5.1( VGE=15V T C=25C Resistive Load 1.6 Switching Time t (s) Fig. 9 Collector Current vs. Switching Time tf 0.3 ton 0.1 tr (VCE) 1 tf tON 0.3 0.1 tr(Ic) 0.03 tr(VCE) 0 50 100 150 200 250 0.03 300 3 10 Collector Current IC (A) ton 0.2 tf 0.1 tr (IC ) 3 10 30 EON 80 60 EOFF 40 ERR 0 100 300 200 100 0 0 1 2 200 300 400 3 4 IRrM Transient Thermal Impedance Rth (J-C) (C/W) RG=5.1(, VGE=15V, T C=125C 100 30 10 3 1 0.3 10 0 600 1200 1800 -di/dt (A/s) FRD -1 IGBT 3x10 -2 1x10 -2 3x10 -3 T C=25C 1x10 -3 1 Shot Pulse 10 -2 300 10 -3 Reverse Bias Safe Operating Area 1000 trr 3x10 -1 10 -4 30 2000 IF=300A T C=25C T C=125C Fig.16- Transient Thermal Impedance 3x10 -4 10 -5 10 Series Gate Impedance RG (() Fig. 16 Transient Thermal Impedance 1x10 ERR 3 Forward Voltage VF (V) 1 30 500 Collector Current I C (A) Forward Current I F (A) 400 350 EOFF Fig. 15 T C=125C 300 EON 100 Fig. 14 Reverse Recovery Fig. 14 Characteristics Typical 500 T C=25C VCC=600V IC=300A VGE=15V T C=125C Inductive Load Collector Current IC (A) Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 600 250 10 0 Series Gate Impedance RG (( ) (Typical) 200 20 50 Fig. 13 Forward Characteristics of Free Fig. 13 Wheeling DiodeTypical 150 300 VCC=600V RG=5.1( VGE=15V T C=125C Inductive Load 100 Switching Loss ESW (mJ/Pulse) Switching Time t (s) toff 0.02 100 Fig. 12 Series Gate Impedance vs. Switching Loss 120 VCC=600V IC=300A VGE=15V T C=125C 2 Inductive Load 5 0.05 50 Collector Current IC (A) Fig. 11 Collector Current vs. Switching Loss 10 0.5 0 Series Gate Impedance RG (() Fig. 10 Series Gate Impedance vs. Switching Time 1 0.01 30 Switching Loss ESW (mJ/Pulse) 0 10 -1 1 10 1 Time t (s) 403 http://store.iiic.cc/ 2400 0.1 0 200 400 600 800 1000 Collector to Emitter Voltage V CE (V) 1200 1400