IXKT 70N60C5 Advanced Technical Information CoolMOSTM 1) Power MOSFET ID25 = 66 A VDSS = 600 V RDS(on) max = 0.045 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-268 AA G G S q D(TAB) S Features MOSFET Symbol Conditions VDSS TVJ = 25C Maximum Ratings VGS ID25 ID90 TC = 25C TC = 90C EAS EAR single pulse repetitive dV/dt MOSFET dV/dt ruggedness VDS = 0...480 V Symbol Conditions ID = 11 A; TC = 25C 600 V 20 V 66 46 A A 1950 3 mJ mJ 50 V/ns Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 40 45 3 3.5 V 10 A A 100 nA RDSon VGS = 10 V; ID = 44 A VGS(th) VDS = VGS; ID = 3 mA IDSS VDS = 600 V; VGS = 0 V IGSS VGS = 20 V; VDS = 0 V Ciss Coss VGS = 0 V; VDS = 100 V f = 1 MHz Qg Qgs Qgd VGS = 0 to 10 V; VDS = 400 V; ID = 44 A 150 35 50 td(on) tr td(off) tf VGS = 10 V; VDS = 400 V ID = 44 A; RG = 3.3 30 20 100 10 2.5 TVJ = 25C TVJ = 125C 50 6800 320 RthJC IXYS reserves the right to change limits, test conditions and dimensions. (c) 2009 IXYS All rights reserved m * fast CoolMOSTM 1) power MOSFET 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness * Enhanced total power density Applications * Switched mode power supplies (SMPS) * Uninterruptible power supplies (UPS) * Power factor correction (PFC) * Welding * Inductive heating * PDP and LCD adapter 1) CoolMOSTM is a trademark of Infineon Technologies AG. pF pF 190 nC nC nC ns ns ns ns 0.23 K/W 20090209e 1-4 Advanced Technical Information IXKT 70N60C5 Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. IS VGS = 0 V VSD IF = 44 A; VGS = 0 V 0.9 trr QRM IRM IF = 44 A; -diF/dt = 100 A/s; VR = 400 V 600 17 60 max. 44 A 1.2 V ns C A Component Symbol Conditions TVJ Tstg operating Symbol Conditions Maximum Ratings -55...+150 -55...+150 Characteristic Values min. Weight IXYS reserves the right to change limits, test conditions and dimensions. (c) 2009 IXYS All rights reserved C C typ. 6 max. g 20090209e 2-4 IXKT 70N60C5 Advanced Technical Information TO-247 AD Outline 250 600 TJ = 25C VGS = 20 V 140 10 V 8 V 10 V 120 7V 500 8V TJ = 150C 200 7V 6V VGS = 20 V 100 400 5.5 V 300 I D [A ] I D [A ] Ptot [ W] 150 6V 100 80 60 5V 5.5 V 200 40 4.5 V 5V 50 100 20 4.5 V 0 0 0 40 80 120 TC [C] Fig. 1 Power dissipation 160 0 0 5 10 V [V] Fig. 2 Typ. output characteristics IXYS reserves the right to change limits, test conditions and dimensions. (c) 2009 IXYS All rights reserved DS 15 20 0 5 10 V DS 15 20 [V] Fig. 3 Typ. output characteristics 20090209e 3-4 IXKT 70N60C5 Advanced Technical Information 0.16 0.12 320 ID = 44 A VGS = 10 V TJV = 150C 5.5 V VDS = 5 V 6V 6.5 V 7V 0.12 VDS > 2*RDS(on) max * ID 25 C 280 0.1 240 0.08 200 I D [A ] [] DS (on) 0.08 0.06 98 % 160 150 C R R DS (on) [] 20 V 120 typ TJ = 0.04 0.04 80 0.02 40 0 0 0 20 40 60 80 100 0 -60 -20 20 60 I D [A] 140 180 0 2 4 6 T j [C] Fig. 4 Typ. drain-source on-state resistance characteristics of IGBT 10 100 V Fig. 5 Drain-source on-state resistance 3 8 10 [V] GS Fig. 6 Typ. transfer characteristics 12 5 10 ID = 11 A pulsed VGS = 0 V f = 1 MHz 10 10 4 10 3 Ciss VDS = 50 V 10 2 1 20 V 8 150 C, 98% 25 C 40 0V C [pF ] 6 V GS I F [A ] [V ] TJ = 150 C 25 C, 98% 10 1 Coss 10 2 10 1 10 0 4 Crss 2 10 0 0 0 0.5 1 V SD 1.5 2 0 50 100 Q [V] Fig. 7 Forward characteristic of reverse diode Fig. 8 2000 gate 0 150 Typ. gate charge 150 200 [V] Fig. 9 Typ. capacitances 1 10 0 660 620 V E 1000 Z tZhthJC K /W ] J C [[K/W] B R (DS S ) [V ] 10 [m J ] DS ID = 0.25 mA 1500 AS 100 V 700 ID = 11 A 50 [nC] R C 1 = 1 /R -2 580 single pulse 0 540 20 60 100 140 T j [C] Fig. 10 Avalanche energy 180 10 0.01 -60 -20 20 60 140 180 Fig. 11 Drain-source breakdown voltage IXYS reserves the right to change limits, test conditions and dimensions. (c) 2009 IXYS All rights reserved 100 T j [C] D = tp/T 1 R2 0.1 10 500 -1 1 C 2 = 2 /R 2 Ri 0.029 i 0.0003 0.049 0.0029 0.093 0.06 0.06 0.2 -3 110 -6 -5 10 10 10 -4 -3 100 10 10 1000 10 -2 -1 0 10000 10 t [ms] t p [s] Fig. 12 Max. transient thermal impedance 20090209e 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.