© 2009 IXYS All rights reserved 1 - 4
20090209e
IXKT 70N60C5
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specifi ed)
min. typ. max.
RDSon VGS = 10 V; ID = 44 A 40 45 mΩ
VGS(th) VDS = VGS; ID = 3 mA 2.5 3 3.5 V
IDSS VDS = 600 V; VGS = 0 V TVJ = 25°C
TVJ = 125°C 50
10 µA
µA
IGSS VGS = ± 20 V; VDS = 0 V 100 nA
Ciss
Coss
VGS = 0 V; VDS = 100 V
f = 1 MHz
6800
320
pF
pF
Qg
Qgs
Qgd
VGS = 0 to 10 V; VDS = 400 V; ID = 44 A
150
35
50
190 nC
nC
nC
td(on)
tr
td(off)
tf
VGS = 10 V; VDS = 400 V
ID = 44 A; RG = 3.3 Ω
30
20
100
10
ns
ns
ns
ns
RthJC 0.23 K/W
ID25 = 66 A
VDSS = 600 V
RDS(on) max = 0.045 Ω
CoolMOS™ 1) Power MOSFET
Features
• fast CoolMOS™ 1) power MOSFET
4th generation
- High blocking capability
- Lowest resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
• Enhanced total power density
Applications
• Switched mode power supplies
(SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
• PDP and LCD adapter
MOSFET
Symbol Conditions Maximum Ratings
VDSS TVJ = 25°C 600 V
VGS ± 20 V
ID25
ID90
TC = 25°C
TC = 90°C
66
46
A
A
EAS
EAR
single pulse
repetitive
1950
3
mJ
mJ
dV/dt MOSFET dV/dt ruggedness VDS = 0...480 V 50 V/ns
D
G
S
N-Channel Enhancement Mode
Low RDSon, High VDSS MOSFET
Ultra low gate charge
TO-268 AA
G
S
ID = 11 A; TC = 25°C
1) CoolMOS™ is a trademark of
Infi neon Technologies AG.
q D(TAB)
© 2009 IXYS All rights reserved 2 - 4
20090209e
IXKT 70N60C5
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
Source-Drain Diode
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specifi ed)
min. typ. max.
ISVGS = 0 V 44 A
VSD IF = 44 A; VGS = 0 V 0.9 1.2 V
trr
QRM
IRM
IF = 44 A; -diF/dt = 100 A/µs; VR = 400 V
600
17
60
ns
µC
A
Component
Symbol Conditions Maximum Ratings
TVJ
Tstg
operating -55...+150
-55...+150
°C
°C
Symbol Conditions Characteristic Values
min. typ. max.
Weight 6g
© 2009 IXYS All rights reserved 3 - 4
20090209e
IXKT 70N60C5
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
Fig. 1 Power dissipation Fig. 2 Typ. output characteristics Fig. 3 Typ. output characteristics
0 40 80 120 160
0
100
200
300
400
500
600
TC [°C]
Ptot [ W]
TO-247 AD Outline
4.5 V
5V
5.5 V
6V
7V
8V
10 V
20 V
0
20
40
60
80
100
120
140
0 5 10 15 20
V
DS
[V]
I
D
]A[
4.5 V
5V
5.5 V
6V
7V
8V
10 V
20 V
0
50
100
150
200
250
0 5 10 15 20
V
DS
[V]
I
D
]
A
[
T
J
= 25°C
V
GS
=
V
GS
=
T
J
= 150°C
© 2009 IXYS All rights reserved 4 - 4
20090209e
IXKT 70N60C5
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
Fig. 5 Drain-source on-state resistanceFig. 4 Typ. drain-source on-state
resistance characteristics of IGBT
Fig. 7 Forward characteristic
of reverse diode
Fig. 8 Typ. gate charge
Fig. 10 Avalanche energy Fig. 11 Drain-source breakdown voltage
Fig. 6 Typ. transfer characteristics
Fig. 9 Typ. capacitances
Fig. 12 Max. transient thermal
impedance
single pulse
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
10
0
10
-1
10
-2
10
-3
t
p
[s]
Z
CJ
h
t
]
W
/K[
540
580
620
660
700
-60 -20 20 60 100 140 180
Tj [°C]
V
)
S
S
D
(RB
]
V
[
0
500
1000
1500
2000
20 60 100 140 180
T
j
[°C]
E
S
A
]Jm
[
Ciss
Coss
Crss
10
5
10
4
10
3
10
2
10
1
10
0
050100150200
V
DS
[V]
C]Fp[
120V
40 0V
0
2
4
6
8
10
12
050100150
Q
gate
[nC]
V
SG
]V[
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10 3
10 2
10 1
10 0
00.511.52
VSD [V]
IF]A[
25 °C
150 °C
0
40
80
120
160
200
240
280
320
0246 810
V
GS
[V]
I
D
]
A
[
typ
98%
0
0.02
0.04
0.06
0.08
0.1
0.12
-60 -20 20 60 100 140 180
T
j
[°C]
R
)no(SD
[Ω]
5V 5.5 V
6V
6.5 V
7V
20 V
0
0.04
0.08
0.12
0.16
0 20406080100
I
D
[A]
R
)no(
S
D
[Ω]
V
DS
=
T
JV
= 150°C I
D
= 44 A
V
GS
= 10 V V
DS
> 2·R
DS(on) max
· I
D
T
J
=
T
J
=
V
DS
= 50 V
V
GS
= 0 V
f = 1 MHz
I
D
= 11 A I
D
= 0.25 mA
D= t
p
/T
I
D
= 11 A pulsed
1 10 100 1000 10000
0.01
0.1
1
t [ms]
ZthJC [K/W]
C1=
τ
1/R 1
R1R2
C2=
τ
2
/
R2
Riτi
0.029 0.0003
0.049 0.0029
0.093 0.06
0.06 0.2
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