VPEYUPIVFI NIZA BE Power-Clamper Axial Device Zener Diodes with Fast Recovery Diode AX078 Package ST02D-170 Mt@iEd OUTLINE Mm esttEd CHARACTERISTIC DIAGRAMS S ane) y Dp) = | vf 0 Package : AX078 Unit:mm JL-999 SE - #ARaE PER -RaRae PER - Laws Weight 0.38 Breakdown Voltage vs Junction Temperature Reverse Current vs Junction Temperature Reverse Current vs Junction Temperature TEST it TEST TEST 170V 200W HK Kt 00 mo oS read =< = @s 2 Su S c | 3: [7 [4 . C _* _AF k am | = = NI-YIF-FAA KB EFRDERA 27.5 5 27.5 | O40 = z THY + Ie s 5 5 ANE z 3 3 x 3 3 es fe OQ . . o_pf}<q_#_ TYP TYP TYP : Power Zener Diodes with FRD @ Ir=1mA Vr=145V Va=600V Axial Package 001 001 . : . . 0 50 100 150 0 50 100 150 0 50 100 150 + Application for snubber circuit Junction Temperature Tj [C] Junction Temperature Tj [C] Junction Temperature Tj [C] ABERICOV CLM BWeb 47 b MIL (AR RR) & CBRE SV PRAIA IT OV YC SHRED CHER FS, For details of outline dimensions, refer to our web site or the they UVPBH SBE - Ax eae - ae Semiconductor Short Form Catalog. As for the marking, refer to Peak Surge Reverse Power Junction Capacitance vs Frequency Junction Capacitance vs Frequency BTwRX RATINGS the specification Marking, Terminal Connection. @MxtRATK Absolute Maximum Ratings G8#O72V.G4 T1=25C//unless otherwise specified) wm OA as _ = oF Mir Item Symbol Conditions Unit eee remperature Tsg -40~150 | -40~150} Re junction temperature Tj 150 150 Cc Te ican Me irse power PRSM | {o/1000.22 Norrepetitive 200 - W Were surge Rierse current IRSM_| ioviooo Nontrepet tive 0.75 - A Mae rar A ese voltage VRM 145 600 V @B AN - ZARTE Electical CharacteristicsG8o Zev. HF T1=25'C//unless otherwise specified) Bh fe BR AEE T=ImA MIN. 155 - Breakdown voltage VBR , Wax. 7 - V ffl] BASE Ipp=0. 75A Restriction voltage VCL MAX. 280 - V Vr=145V ee MAX. 5 - ae current IR Vr=600V H A - MAX. 5 MATES Ted Tr / In = 0.1A / 0.3A Reverse recovery time trr , , MAX. 500 ns ART . At JH eet resistance 9 jl ae to Ma MAX. 17 C/W 58 C(U180) www.shindengen.co.jp/product/semi/ Peak Surge Reverse Power Prev [kW] "0.1 1 10 i< tp +i Prsm=Ip xVeu TL =25C 100 1000 10000 Pulse Width tp [ ps] TEST x HK TEST _> HK Junction Capacitance Cj [pF] Junction Capacitance Cj [pF] 1 10 100 1000 1 10 100 1000 Frequency f [kHz] Frequency f [kHz] Junction Capacitance Cj [pF] HAASE - MBE Junction Capacitance vs Applied Voltage 100 TEST x so] DHE 20 1 2 5 10 Applied Voltage Vp [V] TYP f=100kHz OSC=20mV 20 40 HAAS - OBE Junction Capacitance vs Applied Voltage 100 TEST _> 80] DL-KE- som & So > 20 oO S| s > 10 s a x oO 5 g oS 5 TYP 7 2 f=100kHz OSC=20mV 1 2 5 10 20 50 Applied Voltage Vp [V] * Sine wavel50Hz CHIE LD CTWWET, * 50Hz sine wave is used for measurements. NESEY TE OREPEILIRADIC AND YER CBUES, Typicalls@tHW2RALRUWES, * Semiconductor products generally have characterristic variation. Typical a statistical average of the devices ability. www.shindengen.co.jp/product/semi/ (U180) 59