This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB0789, 2SB0789A (2SB789, 2SB789A) Silicon PNP epitaxial planar type Unit: mm For low-frequency driver amplification 4.50.1 1.60.2 4.0+0.25 -0.20 M Di ain sc te on na tin nc ue e/ d Features 3 2 0.50.08 1.50.1 (Emitter open) 2SB0789 Rating Unit VCBO -100 V Collector-emitter voltage 2SB0789 (Base open) VCEO V 1: Base 2: Collector 3: Emitter MiniP3-F1 Package -120 2SB0789A Emitter-base voltage (Collector open) -100 VEBO Collector current IC Peak collector current ICP Collector power dissipation * PC Junction temperature Tj Storage temperature Tstg 45 3.00.15 -120 2SB0789A 0.4 max. Collector-base voltage 3 Symbol 2.60.1 Parameter 0.40.04 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Absolute Maximum Ratings Ta = 25C 1.0+0.1 -0.2 1 0.40.08 3 * High collector-emitter voltage (Base open) VCEO * Large collector power dissipation PC 2.50.1 1.50.1 -5 V - 0.5 A -1 A 1 W 150 C -55 to +150 C Marking Symbol: * 2SB0789: D * 2SB0789A: E cm2 Note) *: Print circuit board: Copper foil area of 1 or more, and the board thickness of 1.7 mm for the collector portion. Parameter Collector-emitter voltage (Base open) ce /D isc on tin ue Electrical Characteristics Ta = 25C 3C Symbol 2SB0789 IC = -100 A, IB = 0 VEBO IE = -10 A, IC = 0 2SB0789A an Emitter-base voltage (Collector open) Conditions VCEO Min 90 VCE = -5 V, IC = -500 mA 50 Collector-emitter saturation voltage *1 VCE(sat) IC = -500 mA, IB = -50 mA Base-emitter saturation voltage *1 VBE(sat) IC = -500 mA, IB = -50 mA en int Ma Transition frequency VCB = -10 V, IE = 50 mA, f = 200 MHz fT Collector output capacitance (Common base, input open circuited) VCB = -10 V, IE = 0, f = 1 MHz Cob Unit V -5 VCE = -10 V, IC = -150 mA hFE1 *2 Max -120 hFE2 Forward current transfer ratio *1 Typ -100 V 220 - 0.2 - 0.6 V - 0.85 -1.20 V 120 MHz 30 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank Q R hFE1 90 to 155 130 to 220 Note) The part number in the parenthesis shows conventional part number. Publication date: December 2002 SJC00056CED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SB0789, 2SB0789A PC Ta IC VCE -18 mA -16 mA -14 mA -1.0 Collector current IC (A) 1.2 Ta = 25C 1.0 IB = -20 mA -12 mA -10 mA - 0.8 mA - 0.6 mA - 0.8 0.8 - 0.4 mA - 0.6 0.6 VCE = -10 V Ta = 25C -1.0 Collector current IC (A) Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness -1.2 - 0.8 - 0.6 M Di ain sc te on na tin nc ue e/ d Collector power dissipation PC (W) IC I B -1.2 1.4 - 0.4 0.4 - 0.2 0 40 60 80 100 120 140 160 VCE(sat) IC Ta = 75C 25C -25C - 0.1 -10 -1 -10 an VCB = -10 V Ta = 25C en 180 int 160 Ma 140 120 100 80 60 40 20 1 10 Emitter current IE (mA) 0 -5 25C Ta = -25C 75C - 0.01 - 0.01 100 - 0.1 -1 -10 Cob VCB IE = 0 f = 1 MHz Ta = 25C 40 30 20 10 0 -1 -10 -100 Collector-base voltage VCB (V) SJC00056CED -15 hFE IC 600 VCE = -10 V 500 400 300 Ta = 75C 200 25C -25C 100 0 - 0.01 - 0.1 -1 Collector current IC (A) Collector current IC (A) 50 -10 Base current IB (mA) IC / IB = 10 -1 ce /D isc on tin fT I E 200 0 -12 -10 ue - 0.1 Collector current IC (A) Transition frequency fT (MHz) -8 - 0.1 - 0.01 - 0.01 2 -6 -100 Collector output capacitance C (pF) (Common base, input open circuited) ob Collector-emitter saturation voltage VCE(sat) (V) -10 0 -4 VBE(sat) IC IC / IB = 10 -1 -2 0 Collector-emitter voltage VCE (V) Ambient temperature Ta (C) -100 - 0.2 Forward current transfer ratio hFE 20 Base-emitter saturation voltage VBE(sat) (V) 0 - 0.4 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0.2 0 - 0.2 mA -10 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: - Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. - Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.