Ky SGS-THOMSON TXN/TYN 0512 ---> > IMICROELECTRONIGS TXN/TYN 1012 SCR FEATURES = HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT = HIGH STABILITY AND RELIABILITY a TXN Serie : INSULATED VOLTAGE = 2500Vams) (UL RECOGNIZED : E81734) DESCRIPTION The TYN/TXN 0512 ---> TYN/TXN 1012 Family of Silicon Controlled Rectifiers uses a high per- formance glass passivated technology. This general purpose Family of Silicon Controlled TO220AB Rectifiers is designed for power supplies up to (Plastic) 400Hz on resistive or inductive load. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current TXN | Tc=80C 12 A (180 conduction angle) TYN | Tc=90C IT(AV) Average on-state current TXN | Tc=80C 8 A (180 conduction angle,single phase circuit) TYN | Tc=90C ITSM Non repetitive surge peak on-state current tp=8.3 ms 125 A ( Tj initial = 25C ) tp=10 ms 120 2t 2t value tp=10 ms 72 A2s di/at Critical rate of rise of on-state current 100 A/us Gate supply: IG =100mA_ diGg/dt = 1 Ajus Tstg Storage and operating junction temperature range - 40 to + 150 C Tj - 40 to+ 125 C Tl Maximum lead temperature for soldering during 10 s at 4.5mm 260 C from case Symbol Parameter TYN/TXN Unit 0512 | 112 212 412 612 812 | 1012 VDRM Repetitive peak off-state voltage 50 100 200 400 600 800 | 1000 Vv VRRM Tj = 125C 1/5 April 1995 TXN/TYN 0512 ---> TXN/TYN 1012 THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j-a) |Junction to ambient 60 C/W Rth (j-c) DC | Junction to case for DC TXN 3.5 C/W TYN 2.5 GATE CHARACTERISTICS (maximum values) PG (AV) =1W PGM = 10W (tp= 20 us) IFG@M = 4A (tp=20 us) VRGM = 5V. ELECTRICAL CHARACTERISTICS Symbol Test Conditions Value Unit IGT Vp=12V.) (DC) RiL=33Q Tj=25C MAX 15 mA VGT Vp=12V.) (DC) RiL=33Q Tj=25C MAX 1.5 Vv VeD Vp=VpbRM RL=3.3kQ Tj= 125C MIN 0.2 Vv tgt Vp=VpRM_ |g = 40mA Tj=25C TYP 2 ys dig/dt = 0.5A/us IL IG@= 1.2 IGT Tj=25C TYP 50 mA IH IT=100mA gate open Tj=25C MAX 30 mA VIM ITM= 24A tp= 380us Tj=25C MAX 1.6 Vv IDRM VDRM_ Rated Tj=25C MAX 0.01 mA IRRM VRRM_ Rated Tj= 125C 3 dv/dt Linear slope up to VD=67%VDRM Tj= 125C MIN 200 V/us gate open tq Vp=67%VDRM lTM=24A_ Vp= 25V Tj= 125C | TYP 70 ys ditm/dt=30 A/us dVp/dt= 50V/us 2/5 SGS-THOMSON MICROE. Be TXN/TYN 0512 ---> TXN/TYN 1012 Fig.1 : Maximum average power dissipation versus Fig.2 : Correlation between maximum average power average on-state current (TXN). dissipation and maximum allowable temperatures (Tamb and Tease) for different thermal resistances heatsink + contact (TXN). P (W) P (WwW) Tease ("G) 14 . . 14 5 360 0 c/w lT7 4 C/W to Mee LZ SK pe + 10 6 c/w {P85 Pane ~~, a = 120 6 f a 6 ) Za ia 4 QQ: 60 4 2 2 ; b115 7 Tamb (C Cf 30 Itav) (A) ro} oO ! ! 1 1 oO 125 oO 2 4 6 8 10 12 14 G 20 40 60 80 100 120 140 Fig.3 : Maximum average power dissipation versus Fig.4 : Correlation between maximum average power average on-state current (TYN). dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (TYN). P (Ww) P (Ww) Tease ("C) 18 : 16 aL 360 14 ecw FBS | v1 ZL _ 12 4 C/W 12 oe - pc C/W | los 10 J ZL ay : 180 7 10 8 - a i . oo 8 WA i) = 12 GQ 180 + 105 6 f 7 6 ey 4 4 Q= 60 4 4115 1 4 9 , | fo 30 ITav) fA) Tamb (C) 0 ! 0 L125 oO 2 4 6 8 10 12 14 0 20 40 60 80 100 120 140 Fig.5 : Average on-state current versus case Fig.6 : Average on-state current versus case temperature (TXN). temperature (TYN). I Tay) (A) I ayy (A) 14 14 12 12 10 & oo G&G Tease(C) Tease(C) Qo 25 50 75 100 125 G 25 50 75 100 126 3/5 MISROBLECT Us TXN/TYN 0512 ---> TXN/TYN 1012 Fig.7 : Relative variation of thermal impedance versus pulse duration. Zth/Rth 1 Zth(j-c) 0.1 Zth(j-a) tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1642 5E+2 Fig.9 : Non repetitive surge peak on-state current versus number of cycles. | tg tA) 140 Tj initial = 26C 120 100 80 60 40 20 Number of cycles 1 10 100 1000 Fig.11 : On-state characteristics (maximum values). | rpg (A) 1000 Tj initial 25C 100 Tj max Tj max 10 Vie = 0.75 Rt =0.0360 VoImM(v} 8 1 2 3 4 5 4/5 Or SGS-THOMSON r MIGROELECT= Fig.8 : Relative variation of gate trigger current versus junction temperature. Igt Ti] . Inj] . IgtlTi=25 Cl] In[Tj=25 C] 2.5 2 Igt 1.5->- =i RS 1 lh ett | Pot 0.5 T > 1 Tj Cc) a 1 1 1 1 -49-30-20-10 0 10 20 30 40 50 60 70 80 80 100110120130 Fig.10 : Non repetitive surge peak on-state current for a sinusoidal pulse with width t < 10 ms, and corresponding value of It. Itsm (A). I't (A's) Tj initial = 25C 100 TXN/TYN 0512 ---> TXN/TYN 1012 PACKAGE MECHANICAL DATA TO220AB Plastic REF. DIMENSIONS Millimeters Inches A Min. | Max. | Min. | Max. G A__| 10.00 | 10.40 | 0.393 | 0.409 a B__| 15.20 | 15.90 | 0.598 | 0.625 LL GA+ |e C__| 13.00 | 14.00 | 0.511 | 0.551 B D_ | 6.20 | 6.60 | 0.244 | 0.259 F_ | 3.50 | 4.20 | 0.137 | 0.165 Oo G_| 265 | 2.95 | 0.104 | 0.116 IATL FF H_ | 4.40 | 4.60 | 0.173 | 0.181 | 0 oh l 3.75 | 3.85 | 0.147 | 0.151 Tt J__| 1.23 | 1.32 | 0.048 | 0.051 M L__| 0.49 | 0.70 | 0.019 | 0.027 ve M_| 2.40 | 2.72 | 0.094 | 0.107 > N | 480 | 5.40 | 0.188 | 0.212 OQ | 1144 | 1.70 | 0.044 | 0.066 P| 0.61 | 0.88 | 0.024 | 0.034 Cooling method : by conduction (method C) Marking : type number Weight : 23g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether- lands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. ky7 S&S:THOMSON of PMIGhQE LEST)