70-78 %ho +700 Fey + B1F 7Ob8-+ 329.4779 TOSHIBA T55257DPL/DFL/DFTL/DTRL-55L,-70L,-85L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GaTE CMOS 32,768-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55267DPL/DFL/DFTLDTRL is a 262,144-bit static random access memory (SRAM) organized as $2,768 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V + 10% power supply. Advanced circuit technology provides both high speed and low power at an operating current of mA/MHz (typ) and a minimum cycle time of 55 ns, It is automatically placed in low- power mode at 0,3 nA standby current (typ) when chip enable (OE) is asserted high. There are two control inputs. CE is used to select the device and for data retention control, and output enable (OE) provides fast memory access. This device ia well suited to various microprocessor system a plications where high specd, low wer and battery backup are required, The TCB5257DPLDFLID isavailable in a standard plastic pin dual-in-line package (DIP, plastic 28-pin small-outline package (SOP) and normal! and reverse pinout plastic 28-pin thin-small-ontline package (TSOP). FEATURES @ Low-power dissipation @ Access Times (maximum): Standby curtent off TA (nes me y current o Maximitm) at Ta = 25C , : 851 Single power supply voltage of 5 V + 10% ns ns ns e Fower own features ang Ot BEV Access Time ns 85 ns @ Date retan on aupply voltage of 2 to 5. : 35 45 rs Direct TTL compatibility for all inputs and Faclnen ume _ = outputs . ? DIP28-P.600-2.54(DPL) (Weight: 4.42 g typ) SOP28-P-450-1.27 (DFL) (Weight; 0.79 g typ) TSOP I 28-P-0.55 (DFTL) (Weight; 0.22 g typ) TSOP I 28-P-0.55A (DTRL) (Weight: 0.22 g typ) PIN ASSIGNMENT (TOP VIEW) 28 PIN DIP & SOP 28 PIN TSOP (Normal pinout) (Raversa pinout) fs 1 1 14 PIN NAMES to PINNO. E11 2/3/1415 7677 ]e8]91101111 121) 13114 Rw PIN NAME [OE |A11| Ag | Ag | Ara |RW[Vp0| Ara |Ara] Ar | As | As | Aa [Ag PIN'NO, [15] 16/17) 48] 19 | 20] 21 [22 | 23 | 24 | 25 | 26 | 27 | 28 Vl to 108 PIN NAME} Ap | Ay | Ag [1/01|02//03 GNO|/04|VOs|VO6|/07 |VOal CE Aig V; Power (+5 GND Ground @ TOSHIBA is continually working to improve the quailty and the reliability of Its products. Neverthaless, semiconductor davices in general can malfunction or fall due to their inherent electrical sensitivity and vulnerability ta physical stress, It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of fatety. and to avoid situations in which a malfunction or failure of a FOsHiBA product could cause loss of human life, odily Injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as set forth in the most recent products Specifications, Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Rellability Handbook, . The products described in this document are subject to foreign exchange and foreign trade control laws. The information contained herein is Presented only as a guide for the applications of our products, No responsibility 1s assumed by TOSHIBA CORPORATION fer any infringements of intellactual prope or other rights of the third parties which may result from its use. No license is granted by Implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others, Othe information contained herein |s subject to change without notice. 1998-08-05 1/11TOSHIBA TC55257DPL/DFL/DFTL/DTRL-55L,-70L,-85L BLOCK DIAGRAM BR ~toO Vp & ~~ GND = | le os MEMORY CELL 711288 ARRAY All 3|\*s $12 x 64% 8 a oe (262144) wae aa SENSE AMP COLUMN ADDRESS OECODER DATA CONTROL COLUMH, ARRRESS GENERATOR & OPERATION MODE MODE cE RAV VO1 to /O8 H Dour L Din Disabled H H H x * Note: x = dontcare. H = foglc high. L = logic low. ABSOLUTE MAXIMUM RATINGS SYMBOL RATING VALUE Voo Power Supply Voltage ~ 0.3 to 7.9 Vin ~ 0.3" to 7.0 Vyo = 0.5" te Vpp + 0.5 Py Power (hissi 1.0/0.6 ** Tsolder | Saldering Temperatura (105) 260 Storage T ~ 55 to 150 T 0 ta 70 * 3.0 when measured at a pulse width of 50 ns ** SOP 1998-08-05 2/11 xTOSHIBA TC55257DPL/DFL/DFTL/DTRL-55L,-70L,-85L DC RECOMMENDED OPERATING CONDITIONS (Ta = 0 to 70C) SYMBOL PARAMETER MIN TYP MAX UNIT Vpp Power Supply Voltage 45 5.0 5.5 Vin Input High Voltage 2.2 - Vap + 0.3 Vv Vin Input Low Voltage ~ 03 - 0.8 Von Data Retention Supply Voltage 2.0 - 5.5 * 3.0 V when measured at a pulse width of 50 ns DC CHARACTERISTICS (Ta = 0 to 70C, Vpn = 5V + 10%) SYMBOL PARAMETER TEST CONDITION MIN TYP | MAX | UNIT li Input Leakage Current Vin = OV to Yoo 7 ~ 10 | pA lon Output High Current Von = 2.4V -10 - - mA lot Output Low Current Vo, = 0.4 4.0 ~ - mA CE = Vy or RAV @ Vy or OE = Vin Ilo Output Leakage Current Vour = OV to Vop - - 210] 2A CE = Vy, =1 ~ | 0 | = Inport RW = Vin, lour = OMA fexie = 18 mA Other Inputs ViVi teycia = min ~ - 70 Operating Current CE = 0.2V teycle 1 48 - 5 - Ippo RW = Vpn 0.2V, lout 2 OMA mA Other Inputs = Von ~ 0.2V/0.2V tye = min ~ - 60 loos: ICE = Vin ~ - 3 mA Standby Current CE = Vpp ~ 0.2V Ta = @ to 70C - - 20 lpos2 = 20 pA Vpp = 2.0 to 5.5V Ta = 25C - 0.3 2 CAPACITANCE (Ta = 25C, f = 1 MHz) SYMBOL PARAMETER TEST CONDITION {MAX UNIT Gn input Capacitance Vin = GND 10 pF Cout Output Capacitance Vout = GND 10 pF Note: This parameter Is periadically sampled and is not 100% tested. 1998-08-05 3/11 yTOSHIBA AC CHARACTERISTICS AND OPERATING CONDITIONS (Ta = 0 to 70C, Vpp = 5V * 10%) TC55257DPL/DFL/DFTL/DTRL-55L,-70L,-85L READ CYCLE 155257DPL/DFLDFTL/DTRL SYMBOL PARAMETER SSL 70L B5L UNIT MIN MAX MIN MAX MIN MAX tec Read Cycle Time 55 - 70 - 85 - tacc Address Access Time - 55 - 70 - 85 teo Chip Enable Access Time - 55 - - 85 tor Output Enable Access Time - 30 - 35 - 45 teog Chip Enable Low to Gutput Active 10 ~ 10 - 10 ~ ns toce Output Enable Low to Output Active 5 - - 5 ~ too Chip Enable High to Output High-z - 20 - 25 - 30 taoo Output Enable High to Output High-2 - 20 - 25 - 30 toy Output Data Hold Time 10 - 10 - 10 - WRITE CYCLE 055257DPL/DFUDFTUDTRL SYMBOL PARAMETER -55L -70t 858 UNIT MIN MAX MIN MAX MIN MAX twe Write Cycle Time 55 - 70 - 8&5 - twr Write Pulse Width 45 - 50 - 60 - tow Chip Enable to End of Write 50 - 60 - 65 - tas Address Setup Time - 0 ~ 0 - twr Write Recovery Time - Q - 0 - ns topw RAW tow to Output High-2 - 20 - 25 - 30 torw RW High to Output Active 5 - - 5 - tos Data Setup Tima 25 - 30 - 40 - ton Data Hold Time 0 - 0 ~ 0 - AC TEST CONDITIONS Output load: 80 pF + one TTL gate (-55L) 100 pF + one TTL gate (-70L, -85L) Input pulse level: 0.6 V, 2.4 V Timing measurements: 1.5 V Reference leval; 1.5 V tp, tp: 5 ns 1998-08-05 4/17TOSHIBA TC55257DPL/DFL/DFTL/DTRL-55L,-70L,-85L TIMING DIAGRAMS READ CYCLE (Seo Note 1) ~~ bre a ADDRESS x <, to tooo EER VALID DATA OUT fern Dour Reid CYCLE 1 CONTROLLED) (See Nate 4) L. _ ADDRESS 1998-08-05 5/11 vy |TOSHIBA TC55257DPL/DFL/DFTU/DTRL-55L,-70L,-851. WRITE CYCLE 2 (CE CONTROLLED) (Sea Note 4) ADDRESS W VF Note: (1) R/W remains HIGH for the read cyele. (2) If CE goes LOW coincident with or after R/W goes LOW, the outputs will remain at high impedance, (8) If CE goes HIGH coincident with or before R/W goes HIGH, the outputs will remain at high impedance. (4) If OF is HIGH during the write cycle, the outputs will remain at high impedance, (6) Because 1/O signals may be in the output atate at this time, input signals of reverse polarity must not be applied. 1998-08-05 6/11 OoTOSHIBA TC55257DPL/DFUDFTL/DTRL-S5L,-70L,-85L DATA RETENTION CHARACTERISTICS (Ta = 0 to 70C) SYMBOL PARAMETER MIN TYP MAX UNIT Vow Data Retention Supply Voltage 2.0 - 5.5 Vv Standby Current Vpn = 3.0V - - 10" yA an Urre p082 Von=5.5V - 20 Chip Deselact to Data Retention tepr 0 ~ - Mode Time ns tr Recovery Time the (Sue Note) : = Note: Read cycle time. CE CONTROLLED DATA RETENTION MODE (See Note) Vop - O.2V * 2 pA(max) atTa = 0 to 40C (See Note) GND Note; When CE is operating at the Vir level (2.2 V), the standby current is given by Ippgi during the transition of Vpp from 4.5 to 2.4 V. 1998-08-05 7/11 v5 ee ee ee TOSHIBA TC55257DPL/DFL/DFTUDTRL-S5L,-70L,-85L PACKAGE DIMENSIONS (DIP28-P-600-2.54) Units in mm th 28 18 7 q ) | we ws, - ag} ee ee ee ee ee 8 eae) 9 1 14 IAT 37.0+0.2 N oy gq 2 qQ | wt Mm ! \ a: a 3 1.99 re 1420.1 Weight: 4.42 g (typ) a 0,540.1 1998-08-05 8/11 Yoeorr Ores en TOSHIBA TC55257DPL/DFL/DFTL/DTRL-55L,-70L,-85L PACKAGE DIMENSIONS (SOP28-P-450-1.27) Units in mm 28 : 15 : ORB oOo ee nN * = 1 9 ll ) dj E| Ei t { 14 O.895TYP a 0.4340.1 PTO .05 Gal = So} 1,020.2 Weight: 0.79 g (typ) 1998-08-05 9/11 /TOSHIBA TC55257DPL/DFL/DFTL/DTRL-55L,-70L,-85L PACKAGE DIMENSIONS (TSOP I 28-P-0.55) Units in mm 1 28 Py O | z sy = fl : 145 ? 15 . 11,840.2 | E 1.20.1 | J 0.10.05 . 19.440.2 5 1.2MAX \* o . a 38 wh e S - i Weight: 0.22 g (typ) 1998-08-05 10/11OE ee Ce TOSHIBA TC55257DPL/DFL/DFTL/DTRL-55L,-70L,-85L PACKAGE DIMENSIONS (TSOP I 28-P-0.55A) Units in mm ra Ge i | 4 28 i & O ial 8 lr F 15 14 E q 3 l 11.840,2 1.0401 | | 0.140.085 ; 19.430,2 S 1.2MAX " a 4a et Ww a oO Weight: 0.22 g (typ) 1998-08-05 11/11 \- An,