DS30360 Rev. 1 - 1 1 of 4 TB0640H - TB3500H
TB0640H - TB3500H
100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR
SURGE PROTECTIVE DEVICE
Features
·100A Peak Pulse Current @ 10/1000ms
·400A Peak Pulse Current @ 8/20ms
·58 - 320V Stand-Off Voltages
·Oxide-Glass Passivated Junction
·Bi-Directional Protection In a Single Device
·High Off-State impedance and Low On-State
Voltage
·Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
·Case: SMB, Molded Plastic
·Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
·Polarity: None; Bi-Directional Devices Have No
Polarity Indicator
·Weight: 0.093 grams (approx.)
·Marking: Date Code and Marking Code
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
B
A
C
D
F
H
E
G
Characteristic Symbol Value Unit
Non-Repetitive Peak Impulse Current @10/1000us Ipp 100 A
Non-Repetitive Peak On-State Current @8.3ms (one-half cycle) ITSM 50 A
Junction Temperature Range Tj-40 to +150 °C
Storage Temperature Range TSTG -55 to +150 °C
Thermal Resistance, Junction to Lead RqJL 20 °C/W
Thermal Resistance, Junction to Ambient RqJA 100 °C/W
Typical Positive Temperature Coefficient for Breakdown Voltage DVBR/DTj0.1 %/°C
SMB
Dim Min Max
A4.06 4.57
B3.30 3.94
C1.96 2.21
D0.15 0.31
E5.21 5.59
F0.05 0.20
G2.01 2.62
H0.76 1.52
All Dimensions in mm
Maximum Ratings @ TA= 25°C unless otherwise specified
Maximum Rated Surge Waveform
Waveform Standard Ipp (A)
2/10 us GR-1089-CORE 500
8/20 us IEC 61000-4-5 400
10/160 us FCC Part 68 250
10/700 us ITU-T, K20/K21 200
10/560 us FCC Part 68 160
10/1000 us GR-1089-CORE 100
0TIME
100
50
0
I , PEAK PULSE CURRENT (%)
PP
Peak Value (I )
pp
Half Value
t = rise time to peak value
t = decay time to half value
r
p
trtp
NEW PRODUCT
UNDER DEVELOPMENT
DS30360 Rev. 1 - 1 2 of 4 TB0640H - TB3500H
Electrical Characteristics @ TA= 25°C unless otherwise specified
Part Number
Rated
Repetitive
Off-State
Voltage
Off-State
Leakage
Current @
VDRM
Breakover
Voltage
On-State
Voltage
@ IT= 1A
Breakover
Current
IBO
Holding Current
IH
Off-State
Capacitance Marking
Code
VDRM (V) IDRM (uA) VBO (V) VT(V) Min
(mA) Max (mA) Min
(mA) Max (mA) CO(pF)
TB0640H 58 5 77 3.5 50 800 150 800 200 T064H
TB0720H 65 5 88 3.5 50 800 150 800 200 T072H
TB0900H 75 5 98 3.5 50 800 150 800 200 T090H
TB1100H 90 5 130 3.5 50 800 150 800 120 T110H
TB1300H 120 5 160 3.5 50 800 150 800 120 T130H
TB1500H 140 5 180 3.5 50 800 150 800 120 T150H
TB1800H 160 5 220 3.5 50 800 150 800 120 T180H
TB2300H 190 5 265 3.5 50 800 150 800 80 T230H
TB2600H 220 5 300 3.5 50 800 150 800 80 T260H
TB3100H 275 5 350 3.5 50 800 150 800 80 T310H
TB3500H 320 5 400 3.5 50 800 150 800 80 T350H
Symbol Parameter
VDRM Stand-off Voltage
IDRM Leakage current at stand-off voltage
VBR Breakdown voltage
IBR Breakdown current
VBO Breakover voltage
IBO Breakover current
IHHolding current NOTE: 1
VTOn state voltage
IPP Peak pulse current
COOff-state capacitance NOTE: 2
Notes: 1. IH> (VL/RL) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge
recovery time does not exceed 30ms.
2. Off-state capacitance measured at f = 1.0MHz, 1.0VRMS signal, VR= 2VDC bias.
IBO
VBR
VDRM
VT
VBO
IH
I
V
IBR IDRM
IPP
NEW PRODUCT
UNDER DEVELOPMENT
DS30360 Rev. 1 - 1 3 of 4 TB0640H - TB3500H
0.9
T , JUNCTION
TEMPERATURE (°C)
Fig. 2 Relative Variation of Breakdown Voltage
vs. Junction Tem
p
erature
J
V = (T )
BR J
V = (T = 25°C)
BR J
0.95
1
1.05
1.1
1.15
1
.
2
-50 -25 0 25 50 75 100 125 150 175
NORMALIZED BREAKDOWN VOLTAGE
1
1.05
0.95 -50
NORMALIZED BREAKDOWN VOLTAGE
T , JUNCTION TEMPERATURE (ºC)
Fig. 3 Relative Variation of Breakover Voltage
vs. Junction Tem
p
erature
J
1
.
1
-25 075
50
25 125
100 175
150
V = (T )
BO J
V = (T = 25°C)
BO J
1
10
100
11.5 3
2.52 4
3.5 5
4.5
I , ON-STATE CURRENT (A)
T
V , ON-STATE VOLTAGE (V)
Fi
g
. 4 On-State Current vs. On-State Volta
g
e
T
T = 25°C
j
I , OFF-STATE CURRENT (uA)
(DRM)
T , JUNCTION TEMPERATURE (°C)
Fi
g
. 1 Off-State Current vs. Junction Temperature
J
0.001
0.01
1
0.1
10
100
-25 025 50 75 100 125 150
V = 50V
DRM
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1
.4
1.3
1.2
-50 -25 025 50 100
75 125
NORMALIZED HOLDING CURRENT
T , JUNCTION TEMPERATURE (°C)
J
Fig. 5 Relative Variation of Holding Current vs.
Junction Tem
p
erature
I = (T )
HJ
I = (T = 25°C)
HJ
0.1
1
110 100
NORMALIZED CAPACITANCE
V , REVERSE VOLTAGE (V)
Fig. 6 Relative Variation of Junction Capacitance
vs. Reverse Volta
g
e Bias
R
C = (V )
OR
C = (V = 1V)
OR
T = 25°C
f=1Mhz
V
j
RMS =1V
NEW PRODUCT
UNDER DEVELOPMENT
DS30360 Rev. 1 - 1 4 of 4 TB0640H - TB3500H
NEW PRODUCT
Ordering Information (Note 3)
Device Packaging Shipping
TB0640H-TB3500H SMA 5000/Tape & Reel
Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
XXX = Product Type Marking Code
YWW = Date Code Marking
Y = Year ex: N = 2002
WW = Week
Year 1998 1999 2000 2001 2002 2003 2004
Code 8901 2 34
Date Code Key
XXXXX
YWW
UNDER DEVELOPMENT
