2N3055H
15A Power Transistors
Page 1 31/05/05 V1.0
Features:
The 2N3055H is a Silicon power base transistor for high power audio, series-
pass power supplies, disk-head positioners and other linear application. These
devices can also be used in power switching circuits such as converters or
inverters.
Higher safe operating area than 2N3055 at VCE >40V.
Low saturation voltages.
High power dissipation capability.
Pin 1. Base
2. Emitter
Collector(Case)
Dimensions Minimum Maximum
A 38.75 39.96
B 19.28 22.23
C 7.96 9.28
D 11.18 12.19
E 25.20 26.67
F 0.92 1.09
G 1.38 1.62
H 29.90 30.40
I 16.64 17.30
J 3.88 4.36
K 10.67 11.18
Dimensions : Millimetres
Maximum Ratings
Characteristic Symbol Rating Unit
Collector-Emitter Voltage VCEO 60
V
Collector-Emitter Voltage VCER 70
Collector-Base Voltage VCBO 100
Emitter-Base Voltage VEBO 7.0
Collector Current-Continuous IC15
A
Base Current IB7.0
Total Power Dissipation at TC= 25°C
Derate above 25°C PD
115
0.657
W
W/°C
Operating and Storage Junction Temperature Range TJ, TSTG -65 to +200 °C
NPN
2N3055H
15 Ampere
NPN Silicon Transistors
60 Volts
115 Watts
TO-3
2N3055H
15A Power Transistors
Page 2 31/05/05 V1.0
Thermal Characteristics
Characteristic Symbol Maximum Unit
Thermal Resistance Junction to Case Rθjc 1.52 °C/W
Figure 1 - Power Derating
TC, Temperature (°C)
PD, Power Dissipation (Watts)
Electrical Characteristics (TC= 25°C unless otherwise notes)
Characteristic Symbol Minimum Maximum Unit
OFF Characteristics (1)
Collector-Emitter Sustaining Voltage
(IC = 200mA, IB= 0) VCEO(sus) 60 -
V
Collector-Emitter Sustaining Voltage
(IC = 200mA, RBE = 100)VCER(sus) 70 -
Collector-Emitter Sustaining Voltage
(IC = 100mA, VBE(off) = 1.5V) VCEX(sus) 90 -
Collector Cut off Current
(VCE = 30V, IB= 0) ICEO - 0.7
mA
Collector Cut off Current
(VCE = 100V, VBE(off) = 1.5V)
(VCE = 100V, VBE(off) = 1.5V, TC= 150°C)
ICEX -1.0
5.0
Emitter Cut off Current
(VEB = 7.0V, IC = 0) IEBO - 5.0
ON Characteristics
DC Current Gain
(IC= 4.0A, VCE = 4.0V)
(IC= 10A, VCE = 4.0V)
hFE 20
5.0
70 -
Collector-Emitter Saturation Voltage
(IC= 4.0A, IB= 0.4A)
(IC= 10A, IB= 3.3A)
VCE(sat) - 1.1
8.0 V
Base-Emitter on Voltage
(IC= 4.0A, VCE = 4.0V) VBE(on) - 1.8
2N3055H
15A Power Transistors
Page 3 31/05/05 V1.0
Characteristic Symbol Minimum Maximum Unit
Second Breakdown
Second Breakdown Collector Current with Base Forward
Based (t = 1s (non-repetitive), VCE = 60V) IS/B 800 - KHz
Dynamic Characteristics
Current Gain-Bandwidth Product (2)
(IC= 1.0A, VCE = 4.0V) fT800 - KHz
Small-Signal Current Gain
(IC= 1.0A, VCE = 4.0V, f = 1KHz) hfe 10 - -
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%
(2) fT=hfe• ftest
Specifications
IC(av)
maximum
(A)
VCEO
maximum
(V)
hFE
minimum
at IC= 4A
Ptot
at 25°C
(W)
Package Type Part Number
15 60 20 115 TO-3 NPN 2N3055H
For enquiries from all other markets
2N3055H
15A Power Transistors
Page 4 31/05/05 V1.0
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