SGA-2163(Z) SGA-2163(Z) DC to 5000MHz, Cascadable SiGe HBT MMIC Amplifier DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-363 Product Description Features The SGA-2163 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. GaAs HBT 12 0 9 Gain (dB) -10 IRL 6 ORL 3 GaAs pHEMT -20 -30 Return Loss (dB) InGaP HBT SiGe HBT GAIN GaAs MESFET 9 Gain & Return Loss vs. Freq. @TL=+25C Si BiCMOS Broadband Operation: DC to 5000MHz Cascadable 50 Operates from Single Supply Low Thermal Resistance Package Applications Optimum Technology Matching(R) Applied SiGe BiCMOS PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite Si CMOS 0 Si BJT -40 0 1 GaN HEMT 2 3 Frequency (GHz) 4 5 RF MEMS Parameter Small Signal Gain Min. 9.5 Output Power at 1dB Compression Output Third Intercept Point Specification Typ. 10.5 9.8 9.6 7.1 6.2 21.0 18.0 5000 Max. 11.5 Unit dB dB dB dBm dBm dBm dBm MHz Condition 850MHz 1950MHz 2400MHz 850MHz 1950MHz 850MHz 1950MHz >10dB Bandwidth Determined by Return Loss Input Return Loss 22.5 dB 1950MHz Output Return Loss 24.8 dB 1950MHz Noise Figure 4.4 dB 1950MHz Device Operating Voltage 1.9 2.2 2.5 V Device Operating Current 17 20 23 mA Thermal Resistance 255 C/W junction - lead Test Conditions: VS =5V, ID =20mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-10dBm, RBIAS =140, TL =25C, ZS =ZL =50 RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc. DS090924 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 6 SGA-2163(Z) Absolute Maximum Ratings Parameter Rating Unit Max Device Current (ID) 40 mA Max Device Voltage (VD) 4 V Max RF Input Power +18 dBm Max Junction Temperature (TJ) +150 C -40 to +85 C +150 C Operating Temperature Range (TL) Max Storage Temperature Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD <(TJ -TL)/RTH, j-l Typical Performance at Key Operating Frequencies Parameter Unit 100MHz 500MHz 850MHz 1950MHz 2400MHz 3500MHz Small Signal Gain dB 10.7 10.6 10.5 9.8 9.6 Output Third Order Intercept Point dBm 20.9 21.0 18.0 16.9 Output Power at 1dB Compression dBm 7.2 7.1 6.2 5.6 Input Return Loss dB 18.7 19.8 20.3 22.5 22.1 Output Return Loss dB 17.2 19.1 22.3 24.8 23.4 Reverse Isolation dB 15.6 15.4 15.5 16.1 16.4 Noise Figure dB 4.2 4.1 4.4 4.8 Test Conditions: VS =5V, ID =20mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-10dBm, RBIAS =140, TL =25C, ZS =ZL =50 OIP3 vs. Frequency 16.0 27.6 16.9 P1dB vs. Frequency VD= 2.2 V, ID= 20 mA VD= 2.2 V, ID= 20 mA 10 30 TL TL 8 P1dB (dBm) 25 OIP3 (dBm) 9.3 20 15 6 4 TL=+25C 2 TL=+25C 10 0 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 Noise Figure vs. Frequency VD= 2.2 V, ID= 20 mA Noise Figure (dB) 7 6 TL=+25C 5 4 TL=+25C 3 2 0 2 of 6 0.5 1 1.5 2 Frequency (GHz) 2.5 3 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS090924 SGA-2163(Z) Typical RF Performance Over Temperature (Bias: VD =2.2V, ID =20mA (Typ.)) |S | vs. Frequency |S | vs. Frequency 21 12 9 -10 S11(dB) S21 (dB) 11 0 6 3 TL 0 0 1 2 3 Frequency (GHz) -30 +25C -40C +85C 4 -20 -40 5 0 1 |S | vs. Frequency 2 3 Frequency (GHz) 4 22 0 +25C -40C +85C TL -10 S22(dB) S12(dB) -15 -20 -25 -30 Pin 3 1, 2, 4, 5 6 DS090924 1 2 3 Frequency (GHz) Function RF IN GND RF OUT/BIAS 4 -20 -30 +25C -40C +85C TL 0 5 |S | vs. Frequency 12 -10 +25C -40C +85C TL -40 5 0 1 2 3 Frequency (GHz) 4 5 Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. RF output and bias pin. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper operation. 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 6 SGA-2163(Z) Basic Application Circuit VS R BIAS Application Circuit Element Values 1 uF 1000 pF CD Frequency (Mhz) LC 1,2 3 SGA-2163 6 RF in CB RF out CB 4,5 500 850 1950 2400 3500 CB 220 pF 100 pF 68 pF 56 pF 39 pF CD 100 pF 68 pF 22 pF 22 pF 15 pF LC 68 nH 33 nH 22 nH 18 nH 15 nH Recommended Bias Resistor Values for ID=20mA RBIAS=( VS-VD ) / ID VS RBIAS Reference Designator 1 uF 1000 pF Supply Voltage(VS) 5V 6V 8V RBIAS 140 200 300 10 V 390 Note: RBIAS provides DC bias stability over temperature. CD LC A21 CB Mounting Instructions CB 1. Use a large ground pad area near device pins 1, 2, 4, and 5 with many plated through-holes as shown. 2. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. 4 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS090924 SGA-2163(Z) Package Drawing. Alternate Marking with Trace Code Only Trace Code Ordering Information DS090924 P art N umber R eel S iz e D evices/R eel S GA -2163 7" 3000 S GA -2163Z 7" 3000 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 5 of 6 SGA-2163(Z) SOT-363 PCB Pad Layout SOT-363 PCB Pad Layout Preliminary Dimensions in inches [millimeters] RF OUT RF IN Notes: 1. Provide a large ground pad area under device pins 1, 2, 4, & 5 with many plated via holes as shown. 2. Dimensions given for 50 Ohm RF I/O lines are for 31 mil thick Getek. Scale accordingly for different board thicknesses and dielectric contants. 3. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick Getek with 1 ounce copper on both sides. Package Dimensions 6 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS090924