Features
1 of 6
Optimum Technology
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GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
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mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
RF MEMS
SGA-2163(Z)
DC to 5000MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
The SGA-2163 is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high FT and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Gain & Return Loss vs. Freq. @TL=+25°C
0
3
6
9
12
012345
Frequency (GH z )
Gain (dB)
-40
-30
-20
-10
0
Return Loss (dB)
GAIN
IRL
ORL
Broadband Operation: DC to
5000MHz
Cascadable 50Ω
Operates from Single Supply
Low Thermal Resistance
Package
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
DS090924
9
RFMD Green, RoHS Compliant, Pb-Free (Z Part Number)
Package: SOT-363
SGA-2163(Z)
DC to
5000MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
Parameter Specification Unit Condition
Min. Typ. Max.
Small Signal Gain 9.5 10.5 11.5 dB 850MHz
9.8 dB 1950MHz
9.6 dB 2400MHz
Output Power at 1dB Compression 7.1 dBm 850MHz
6.2 dBm 1950MHz
Output Third Intercept Point 21.0 dBm 850MHz
18.0 dBm 1950MHz
Bandwidth Determined by Return
Loss 5000 MHz >10dB
Input Return Loss 22.5 dB 1950MHz
Output Return Loss 24.8 dB 1950MHz
Noise Figure 4.4 dB 1950MHz
Device Operating Voltage 1.9 2.2 2.5 V
Device Operating Current 17 20 23 mA
Thermal Resistance 255 °C/W junction - lead
Test Conditions: VS=5V, ID=20mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-10dBm, RBIAS=140Ω, TL=25°C, ZS=ZL=50Ω
2 of 6 DS090924
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
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SGA-2163(Z)
Typical Performance at Key Operating Frequencies
Absolute Maximum Ratings
Parameter Rating Unit
Max Device Current (ID)40mA
Max Device Voltage (VD)4V
Max RF Input Power +18 dBm
Max Junction Temperature (TJ)+150°C
Operating Temperature Range (TL) -40 to +85 °C
Max Storage Temperature +150 °C
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(T
J-TL)/RTH, j-l
Parameter Unit 100MHz 500MHz 850MHz 1950MHz 2400MHz 3500MHz
Small Signal Gain dB 10.7 10.6 10.5 9.8 9.6 9.3
Output Third Order Intercept Point dBm 20.9 21.0 18.0 16.9
Output Power at 1dB Compression dBm 7.2 7.1 6.2 5.6
Input Return Loss dB 18.7 19.8 20.3 22.5 22.1 16.0
Output Return Loss dB 17.2 19.1 22.3 24.8 23.4 27.6
Reverse Isolation dB 15.6 15.4 15.5 16.1 16.4 16.9
Noise Figure dB 4.2 4.1 4.4 4.8
Test Conditions: VS=5V, ID=20mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-10dBm, RBIAS =140Ω, TL=25°C, ZS=ZL=50Ω
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
TLTL
10
15
20
25
30
0 0.5 1 1.5 2 2.5 3
Fre que ncy (G Hz)
OIP3 (dBm)
0
2
4
6
8
10
00.511.522.53
Frequency (GHz)
P1dB (dBm)
TL=+25ºC
TL=+25ºC
OIP3 vs. Frequency
VD= 2.2 V, ID= 20 mA P1dB vs. Frequency
VD= 2.2 V, ID= 20 mA
TL=+25ºC
2
3
4
5
6
7
00.511.522.53
Frequency (GHz)
Noise Figure (dB)
TL=+25ºC
Noise Figure vs. Frequency
VD= 2.2 V, ID= 20 mA
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
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SGA-2163(Z)
Typical RF Performance Over Temperature (Bias: VD=2.2V, ID=20mA (Typ.))
Pin Function Description
3RF IN
RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation.
1, 2,
4, 5
GND Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possi-
ble.
6RF OUT/BIAS
RF output and bias pin. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper oper-
ation.
0
3
6
9
12
012345
Frequency (GHz)
S21(dB)
+25°C
-40°C
+85°C
TL-40
-30
-20
-10
0
012345
Fr e qu e nc y (G Hz)
S11(dB)
+25°C
-40°C
+85°C
-40
-30
-20
-10
0
012345
Fr e qu e nc y (G Hz)
S22(dB)
+25°C
-40°C
+85°C
-30
-25
-20
-15
-10
012345
Frequency (GHz)
S12(dB)
+25°C
-40°C
+85°C
TL
TL
TL
|S11| vs. Frequency|S21| vs. Frequency
|S12| vs. Frequency |S22| vs. Frequency
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGA-2163(Z)
Basic Application Circuit
RF in RF out
1 uF
CB
CB
CD
VS
RBIAS
LC
3
4,5
6
1,2
1000
pF
SGA-2163
1 uF
RBIAS 1000 pF
CB
CB
CD
LC
VS
A21
ecnerefeR rotangiseD
)zhM(ycneuqerF
005 058 0591 0042 0053
C
B
Fp022Fp001Fp86Fp65Fp93
C
D
Fp001Fp86Fp22Fp22Fp51
L
C
Hn86Hn33Hn22Hn81Hn51
Mounting Instructions
1. Use a large ground pad area near device pins 1, 2,
4, and 5 with many plated through-holes as shown.
2. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
Application Circuit Element V alues
IrofseulaVrotsiseRsaiBdednemmoceR
D
Am02=
R
SAIB
V(=
S
V-
D
I/)
D
V(egatloVylppuS
S
)V5V6V8V01
R
SAIB
041002003093
R:etoN
SAIB
.erutarepmetrevoytilibatssaibCDsedivorp
5 of 6DS090924
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGA-2163(Z)
Package Drawing.
Alternate Marking with Trace Code Only
Ordering Information
Trace Code
rebmuNtraP eziSleeR leeR/seciveD
3612-AGS"70003
Z3612-AGS"70003
6 of 6 DS090924
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGA-2163(Z)
SOT-363 PCB Pad Layout
Package Dimensions
Preliminary
SOT-363 PCB Pad Layout
Dimensions in inches [millimeters]
RF
OUT
RF
I N
Notes:
1. Provide a large ground pad area under device
pins 1, 2, 4, & 5 with many plated via holes as
shown.
2. Dimensions given for 50 Ohm RF I/O lines are for
31 mil thick Getek. Scale accordingly for different
board thicknesses and dielectric contants.
3. We recommend 1 or 2 ounce copper. Measure-
ments for this data sheet were made on a 31 mil
thick Getek with 1 ounce copper on both sides.
