ON Semiconductor BF245A BF245B JFET VHF/UHF Amplifiers N-Channel -- Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDS 30 Vdc Drain-Gate Voltage VDG 30 Vdc Gate-Source Voltage VGS 30 Vdc Drain Current ID Forward Gate Current 100 mAdc IG(f) 10 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 350 2.8 mW mW/C Storage Channel Temperature Range Tstg -65 to +150 C 3 DRAIN 1 2 3 DRAIN 1 2 2 GATE STYLE 22 STYLE 23 3 BF245, BF245A, BF245B, BF245C CASE 29-11, STYLE 23 TO-92 (TO-226AA) 1 GATE 1 SOURCE 3 BF244A, BF244B CASE 29-11, STYLE 22 TO-92 (TO-226AA) 2 SOURCE ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)GSS 30 -- -- Vdc 0.4 0.4 1.6 3.2 -- -- -- -- 7.5 2.2 3.8 7.5 VGS(off) -0.5 -- -8.0 Vdc IGSS -- -- 5.0 nAdc 2.0 2.0 6.0 12 -- -- -- -- 25 6.5 15 25 OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = 1.0 Adc, VDS = 0) Gate-Source (VDS = 15 Vdc, ID = 200 Adc) VGS BF245(1) BF245A, BF244A(2) BF245B, BF244B BF245C Gate-Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) Vdc ON CHARACTERISTICS Zero-Gate-Voltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS BF245(1) BF245A, BF244A(2) BF245B, BF244B BF245C mAdc 1. On orders against the BF245, any or all subgroups might be shipped. 2. On orders against the BF244A, any or all subgroups might be shipped. Semiconductor Components Industries, LLC, 2001 June, 2001 - Rev. 0 1 Publication Order Number: BF245A/D BF245A BF245B ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Yfs 3.0 -- 6.5 mmhos Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Yos -- 40 -- mhos Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 200 MHz) Yfs -- 5.6 -- mmhos Reverse Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 200 MHz) Yrs -- 1.0 -- mmhos (VDS = 20 Vdc, -VGS = 1.0 Vdc) Ciss -- 3.0 -- pF Reverse Transfer Capacitance (VDS = 20 Vdc, -VGS = 1.0 Vdc, f = 1.0 MHz) Crss -- 0.7 -- pF Output Capacitance (VDS = 20 Vdc, -VGS = 1.0 Vdc, f = 1.0 MHz) Coss -- 0.9 -- pF (VDS = 15 Vdc, VGS = 0) F(Yfs) -- 700 -- MHz Input Capacitance Cut-off Frequency(3) 3. The frequency at which gfs is 0.7 of its value at 1 kHz. COMMON SOURCE CHARACTERISTICS 30 20 bis @ IDSS 10 7.0 5.0 3.0 gis @ IDSS 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 0.3 10 bis @ 0.25 IDSS 20 30 50 70 100 200 300 f, FREQUENCY (MHz) grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos) ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25C) 500 700 1000 5.0 3.0 2.0 brs @ IDSS 1.0 0.7 0.5 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 grs @ IDSS, 0.25 IDSS 10 20 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 10 7.0 5.0 gfs @ IDSS gfs @ 0.25 IDSS 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 30 Figure 2. Reverse Transfer Admittance (yrs) |bfs| @ IDSS 30 50 70 100 200 300 f, FREQUENCY (MHz) 5.0 bos @ IDSS and 0.25 IDSS 2.0 1.0 0.5 0.2 gos @ IDSS 0.1 0.05 |bfs| @ 0.25 IDSS 20 gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos) gfs, FORWARD TRANSCONDUCTANCE (mmhos) |b fs|, FORWARD SUSCEPTANCE (mmhos) Figure 1. Input Admittance (yis) 20 gos @ 0.25 IDSS 0.02 500 700 1000 0.01 10 Figure 3. Forward Transadmittance (yfs) 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 7001000 Figure 4. Output Admittance (yos) http://onsemi.com 2 BF245A BF245B COMMON SOURCE CHARACTERISTICS S-PARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz) 30 20 10 0 1.0 40 350 100 340 400 300 0.8 320 40 310 50 20 10 0 350 340 330 0.4 300 200 0.9 30 32 200 100 50 330 ID = 0.25 IDSS ID = IDSS 0.3 ID = IDSS, 0.25 IDSS 500 31 900 800 0.2 300 60 290 70 280 80 270 90 100 260 100 26 110 250 110 25 120 240 120 24 130 230 130 23 140 220 140 22 60 400 500 0.7 70 600 80 0.6 90 900 150 160 170 180 800 190 700 800 700 900 200 600 600 210 20 10 0 350 340 300 0.5 900 70 80 90 100 110 120 800 700 600 500 0.4 900 800 700 600 500 0.3 100 400 400 0.3 ID = 0.25 IDSS 300 200 0.4 100 0.5 300 ID = IDSS 200 28 0.0 200 27 100 150 330 0.6 60 29 160 170 180 190 200 210 Figure 6. S12s 40 50 0.1 500 400 Figure 5. S11s 30 30 700 130 30 20 10 0 350 340 330 100 200 I = 0.25 IDSS D 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8 320 40 310 50 300 60 290 70 280 80 270 90 27 260 100 26 250 110 25 240 120 24 230 130 23 220 140 22 0.7 32 31 30 29 28 0.6 0.6 140 150 160 170 180 190 200 210 150 Figure 7. S21s 160 170 180 190 Figure 8. S22s http://onsemi.com 3 200 210 BF245A BF245B COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25C) 10 7.0 5.0 grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 20 gig @ IDSS 3.0 grg @ 0.25 IDSS 2.0 1.0 0.7 0.5 big @ IDSS 0.3 0.2 10 20 30 big @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.5 0.3 brg @ IDSS 0.2 0.1 0.07 0.05 0.25 IDSS 0.03 0.02 0.01 0.007 0.005 gig @ IDSS, 0.25 IDSS 10 10 7.0 5.0 gfg @ IDSS 3.0 gfg @ 0.25 IDSS 2.0 1.0 0.7 0.5 bfg @ IDSS 0.3 brg @ 0.25 IDSS 0.2 0.1 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 10. Reverse Transfer Admittance (yrg) gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos) gfg , FORWARD TRANSCONDUCTANCE (mmhos) bfg , FORWARD SUSCEPTANCE (mmhos) Figure 9. Input Admittance (yig) 20 500 700 1000 1.0 0.7 0.5 bog @ IDSS, 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 gog @ IDSS 0.03 0.02 0.01 gog @ 0.25 IDSS 10 Figure 11. Forward Transfer Admittance (yfg) 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 12. Output Admittance (yog) http://onsemi.com 4 BF245A BF245B COMMON GATE CHARACTERISTICS S-PARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz) 30 20 10 0 350 340 0.7 40 100 100 200 200 0.5 300 300 60 ID = IDSS 0.4 70 400 700 400 500 310 50 300 60 290 70 280 80 600 900 260 100 110 250 110 120 240 120 130 230 130 140 30 20 180 190 0 350 100 600 ID = IDSS 700 600 700 800 29 28 0.0 27 26 ID = 0.25 IDSS 25 0.01 24 0.02 23 900 0.03 22 0.04 210 150 160 340 330 30 20 170 180 190 200 210 340 330 Figure 14. S12g 10 40 320 0 1.5 1.0 100 100 0.4 30 500 800 200 0.5 40 32 0.01 Figure 13. S11g 10 330 0.02 140 220 170 340 31 900 160 350 0.04 90 270 100 150 0 800 900 90 40 10 600 800 0.3 320 20 0.03 500 700 80 30 ID = 0.25 IDSS 0.6 50 330 ID = IDSS 350 300 200 400 500 600 800 0.9 32 700 900 31 310 50 300 60 290 70 280 80 270 90 27 260 100 26 110 250 110 25 120 240 120 24 130 230 130 23 140 220 140 22 50 100 0.3 60 0.2 70 80 ID = 0.25 IDSS 0.1 900 90 900 100 150 160 170 180 190 200 210 ID = IDSS, 0.25 IDSS 0.8 30 0.7 29 28 0.6 150 160 170 180 190 Figure 16. S22g Figure 15. S21g http://onsemi.com 5 200 210 BF245A BF245B PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X-X 1 N N STYLE 23: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN http://onsemi.com 6 INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- BF245A BF245B Notes http://onsemi.com 7 BF245A BF245B ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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