DPG 10 I 300 PA V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 I 300 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Housing: TO-220 Conditions rIndustry standard outline rEpoxy meets UL 94V-0 rRoHS compliant Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF forward voltage I FAV average forward current VF0 threshold voltage rF slope resistance thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current CJ reverse recovery time junction capacitance IXYS reserves the right to change limits, conditions and dimensions. typ. max. Unit 300 V VR = 300 V 1 A VR = 300 V TVJ = 150 C 0.06 mA TVJ = 25 C 1.27 V 1.45 V 0.98 V 1.17 V TC = 145C 10 A TVJ = 175C 0.74 V IF = 10 A IF = 20 A IF = 10 A IF = 20 A rectangular TVJ = 150 C d = 0.5 for power loss calculation only RthJC t rr min. TVJ = 25 C TVJ = 25 C -55 17.7 m 2.30 K/W 175 C TC = 25 C 65 W t = 10 ms (50 Hz), sine TVJ = 45C 140 A TVJ = 25 C 3 A IF = TVJ = 125C 5.5 A 10 A; VR = 200 V -di F /dt = 200 A/s VR = 150 V; f = 1 MHz TVJ = 25 C 35 ns TVJ = 125C 45 ns TVJ = 25 C 15 pF Data according to IEC 60747and per diode unless otherwise specified (c) 2009 IXYS all rights reserved http://store.iiic.cc/ 20090323a DPG 10 I 300 PA Ratings Symbol Definition min. Conditions I RMS RMS current RthCH thermal resistance case to heatsink Tstg storage temperature per pin max. Unit 35 0.50 -55 Weight A K/W 150 C 2 MD mounting torque FC mounting force with clip 1) typ. 1) g 0.4 0.6 Nm 20 60 N IRMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Product Marking Part number Marking on product Logo DateCode Assembly Code Ordering Standard D P G 10 I 300 PA abcdef YYWW = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Single Diode Reverse Voltage [V] TO-220AC (2) XXXXXX Part Name DPG 10 I 300 PA Similar Part DPG10IM300UC IXYS reserves the right to change limits, conditions and dimensions. Marking on Product DPG10I300PA Package TO-252AA (DPak) Delivering Mode Tube Base Qty Code Key 50 506640 Voltage Class 300 Data according to IEC 60747and per diode unless otherwise specified (c) 2009 IXYS all rights reserved http://store.iiic.cc/ 20090323a DPG 10 I 300 PA Outlines TO-220 IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per diode unless otherwise specified (c) 2009 IXYS all rights reserved http://store.iiic.cc/ 20090323a DPG 10 I 300 PA 30 0.4 12 TVJ = 125C VR = 200 V 25 IF 0.3 TVJ = 25C 125C 150C 20 Qrr 15 [C] [A] TVJ = 125C 10 20 A 10 A 0.2 5A 20 A VR = 200 V 10 A 8 5A IRR 6 [A] 10 4 0.1 5 2 0 0.0 0.0 0.4 0.8 1.2 VF [V] 1.6 0 2.0 0 Fig. 1 Forward current IF versus forward voltage drop VF 100 200 300 400 -diF/dt [A/s] 500 0 200 300 400 500 -diF/dt [A/s] Fig. 3 Typ. reverse recovery current IRR versus -diF /dt Fig. 2 Typ. reverse recovery charge Qrr versus -diF /dt 80 1.4 100 12 600 10 500 TVJ = 125C 1.2 VR = 200 V 60 1.0 8 400 IF = 20 A 0.8 VFR trr 40 [ns] Kf 0.6 10 A IRR [V] IF = 10 A VR = 200 V 6 300 [ns] 200 4 5A 0.4 tfr TVJ = 125C 20 Qrr 0.2 2 0.0 0 0 40 80 120 TVJ [C] 160 VFR 0 0 100 200 300 400 500 0 -diF /dt [A/s] Fig. 5 Typ. reverse recovery time trr versus -diF /dt Fig. 4 Dynamic parameters Qrr, IRR versus TVJ 10 100 tfr 100 200 300 400 -diF /dt [A/s] 0 500 Fig. 6 Typ. forward recovery voltage VFR and tfr versus diF /dt 3 TVJ = 125C VR = 200 V 8 2 IF = 5 A 6 Erec ZthJH 10 A 20 A [J] [K/W] 4 1 Rthi [K/W] 0.3866 0.7062 0.8127 0.3945 2 0 0 100 200 300 400 -diF/dt [A/s] 500 Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. 0 0.001 0.01 0.1 1 ti [s] 0.0004 0.0025 0.022 0.13 10 t [s] Fig. 8 Transient thermal resistance junction to case Data according to IEC 60747and per diode unless otherwise specified (c) 2009 IXYS all rights reserved http://store.iiic.cc/ 20090323a