DPG 10 I 300 PA
ns
HiPerFRED²
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
FSM
I
R
A
V
140
IA
V
F
1.27
R2.30 K/W
V
R
=
13
min.
10
t = 10 ms
Applications:
V
RRM
V300
1T
VJ
V°C=
T
VJ
°C=mA0.06
Package:
Part number
V
R
=
T
VJ
=°C
I
F
=A
V
T
C
=145°C
d =
P
tot
65 WT
C
°C=
T
VJ
175 °C-55
V
I
RRM
=
=300
10
10
T
VJ
=45°C
DPG 10 I 300 PA
V
A
300
V300
25
25
25
max. repetitive reverse voltage
reverse current
forward voltage
virtual junction temperature
total power dissipation
max. forward surge current
Conditions Unit
1.45
T
VJ
°C=25
C
J
j
unction capacitance V = V; T
150
V
F0
V0.74T
VJ
=175°C
r
F
17.7 Ω
f = 1 MHz = °C25
m
V0.98T
VJ
=°C
I
F
=A
V
10
1.17
I
F
=A20
I
F
=A20
threshold voltage
slope resistance for power loss calculation only
Backside: cathode
3A
T
VJ
=°C
reverse recovery time
A5.5
35
45
ns
(50 Hz), sine
t
rr
=35 ns
● Housing:
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
TO-220
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
RVJ
I
RM
max. reverse recovery current
I
F
=A;10
25
T=125°C
VJ
-di
F
=A/µs200/dtt
rr
V
R
=V200
T
VJ
=°C25
T=125°C
VJ
µA
15150 pF
thermal resistance junction to case
thJC
rectangular 0.5
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
FAV
average forward current
FAV
150
IXYS reserves the right to change limits, conditions and dimensions.
©
20090323a
Data according to IEC 60747and per diode unless otherwise specified
2009 IXYS all rights reserved
http://store.iiic.cc/
DPG 10 I 300 PA
I
RMS
A
per pin 35
R
thCH
K/W0.50
M
D
Nm0.6
mounting torque 0.4
T
stg
°C150
storage temperature -55
Weight g2
Symbol Definition Ratings
typ. max.min.Conditions
RMS current
thermal resistance case to heatsink
Unit
I is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
F
C
N60
mounting force with clip 20
Ordering Delivering Mode Base Qty Code Key
Standard
Part Name
DPG 10 I 300 PA 506640Tube 50
XXXXXX
YYWW
Logo
Marking on product
DateCode
Assembly Code
abcdef
Product Marking
D
P
G
10
I
300
PA
Part number
Diode
HiPerFRED
extreme fast
Single Diode
TO-220AC (2)
=
=
=
DPG10IM300UC TO-252AA (DPak)
Similar Part Package
1)
1
)
Marking on Product
DPG10I300PA
300
Voltage Class
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
RMS
IXYS reserves the right to change limits, conditions and dimensions.
©
20090323a
Data according to IEC 60747and per diode unless otherwise specified
2009 IXYS all rights reserved
http://store.iiic.cc/
DPG 10 I 300 PA
Outlines TO-220
IXYS reserves the right to change limits, conditions and dimensions.
©
20090323a
Data according to IEC 60747and per diode unless otherwise specified
2009 IXYS all rights reserved
http://store.iiic.cc/
DPG 10 I 300 PA
0 100 200 300 400 500
0
20
40
60
80
0 40 80 120 160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
K
f
T
VJ
[°C]
0 100 200 300 400 500
0
2
4
6
8
10
12
0
100
200
300
400
500
600
V
FR
[V]
0 100 200 300 400 500
0
2
4
6
8
10
12
0 100 200 300 400 500
0.0
0.1
0.2
0.3
0.4
0.0 0.4 0.8 1.2 1.6 2.0
0
5
10
15
20
25
30
I
RR
[A]
Q
rr
[µC]
I
F
[A]
V
F
[V] -di
F
/dt [A/µs]
t
rr
[ns]
V
FR
t
fr
I
RR
Q
rr
-di
F
/dt [A/µs]
T
VJ
= 125°C
V
R
= 200 V
-di
F
/dt [A/µs]
5 A
10 A
T
VJ
= 125°C
V
R
= 200 V
-di
F
/dt [A/µs]
t
fr
[ns]
0.001 0.01 0.1 1 10
0
1
2
3
t [s]
Z
thJH
[K/W]
0 100 200 300 400 500
0
2
4
6
8
10
E
rec
[µJ]
-di
F
/dt [A/µs]
T
VJ
= 25°C
125°C
150°C
Fig. 1 Forward current I
F
versus
forward voltage drop V
F
Fig. 2 Typ. reverse recovery charge
Q
rr
versus -di
F
/dt
Fig. 3 Typ. reverse recovery current
I
RR
versus -di
F
/dt
Fig. 4 Dynamic parameters
Q
rr
, I
RR
versus T
VJ
Fig. 5 Typ. reverse recovery time
t
rr
versus -di
F
/dt
Fig. 6 Typ. forward recovery voltage
V
FR
and t
fr
versus di
F
/dt
Fig. 7 Typ. recovery energy
E
rec
versus -di
F
/dt
Fig. 8 Transient thermal resistance junction to case
T
VJ
= 125°C
V
R
= 200 V
I
F
= 20 A
T
VJ
= 125°C
V
R
= 200 V
20 A
10 A
5 A
R
thi
[K/W]
0.3866
0.7062
0.8127
0.3945
t
i
[s]
0.0004
0.0025
0.022
0.13
20 A
10 A
5 A
T
VJ
= 125°C
I
F
= 10 A
V
R
= 200 V
I
F
= 5 A
10 A
20 A
IXYS reserves the right to change limits, conditions and dimensions.
©
20090323a
Data according to IEC 60747and per diode unless otherwise specified
2009 IXYS all rights reserved
http://store.iiic.cc/
